PFS S9015

S9015
TRANSISTOR (PNP)
TO-92
1.EMITTER
FEATURES
High total power dissipation.(PC=0.45W)
z
z
High hFE and good linearity
Complementary to S9014
z
2. BASE
3. COLLECTOR
1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.1
A
PC
Collector Power Dissipation
0.45
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA,
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
MIN
TYP
MAX
UNIT
-50
V
IC= -1mA, IB=0
-45
V
V(BR)EBO
IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-0.05
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.05
μA
DC current gain
hFE
VCE=-5V, IC= -1mA
IE=0
60
1000
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB= -10mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=-100mA, IB=-10mA
-1
V
fT
Transition frequency
CLASSIFICATION OF
Rank
Range
VCE=-5V,
IC= -10mA
100
f=30MHz
MHz
hFE(1)
A
B
60-150
250-300
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C
300-400
D
400-1000
S9015
TRANSISTOR (PNP)
Typical Characteristics
S9015
Web Site: WWW.PS-PFS.COM