2SA1013 TO-92L Transistor (PNP) TO-92L 4.700 5.100 1. EMITTER 7.800 8.200 2. COLLECTOR 0.600 0.800 3. BASE 1 Features 2 3 0.350 0.550 High voltage:VCEO=-160V Large continuous collector current capability Complementary to 2SC2383 13.800 14.200 1.270 TYP 2.440 2.640 0.000 0.300 1.600 0.350 0.450 3.700 4.100 1.280 1.580 4.000 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.9 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=- 100μA , IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -160 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -6 V Collector cut-off current ICBO VCB=-150 V , IE=0 -1 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA DC current gain hFE VCE=-5 V, IC=- 200mA Collector-emitter saturation voltage VCE(sat) IC= -500m A, IB= -50mA -1.5 V Base-emitter voltage VBE IC= -5 mA, VCE=- 5V -0.75 V Transition frequency fT VCE= -5 V, IC= -200mA Cob VCB=-10V, IE=0,f=1MHz Collector Output capacitance 60 300 15 MHz 35 CLASSIFICATION OF hFE Rank Range R O Y 60-120 100-200 200-300 pF 2SA1013 TO-92L Transistor (PNP) Typical characteristics