KTC3206 TO-92L Transistor (NPN) TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 3. BASE Features 1 2 7.800 8.200 3 0.600 0.800 High Breakdown Voltage : VCEO=150V(Min.) Low Output Capacitance : Cob=5.0pF(Max.) High Transition Frequency : fT=120MHz(Typ.). 0.350 0.550 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 1 W Tj Junction Temperature Tstg Storage Temperature Range 150 -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol 1.270 TYP 2.440 2.640 0.000 0.300 1.600 0.350 0.450 3.700 4.100 1.280 1.580 4.000 ℃ Dimensions in inches and (millimeters) ℃ unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100µA , IE=0 200 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 150 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA DC current gain hFE VCE=5 V, IC= 10mA Collector-emitter saturation voltage VCE(sat) IC= 10m A, IB= 1mA 0.5 V Base-emitter voltage VBE(sat) IC= 10 mA, IB= 1mA 1 V Transition frequency fT VCE= 30 V, IC= 10mA Collector Output Capacitance Cob 70 240 120 VCB=10V, IE=0, f=1MHz 5.0 CLASSIFICATION OF hFE Rank Range MHz O Y 70-140 120-240 pF KTC3206 TO-92L Transistor (NPN) Typical Characteristics KTC3206 TO-92L Transistor (NPN)