2SA1313 SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) Complements the 2SC3325. 2.80 1.60 0.15 1.90 MARKING : ACO,ACY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA hFE(1) VCE=-1V,IC=-100mA DC current gain hFE(2) Collector-emitter saturation voltage VCE(sat) VCE=-6V,IC=-400mA 70 O 25 Y 40 240 IC=-100mA,IB=-10mA -0.25 V -1 V Base-emitter voltage VBE VCE=-1V,IC=-100mA Transition frequency fT VCE=-6V,IC=-20mA 200 MHz VCB=-6V,IE=0,f=1MHz 13 pF Collector output capacitance CLASSIFICATION OF Rank Range Cob hFE(1) O Y 70-140 120-240 2SA1313 SOT-23-3L Transistor(PNP) Typical Characteristics