FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control. • • • • • • • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers • Qualified to AEC Q101 • RoHS Compliant D ! " G Absolute Maximum Ratings Symbol VDSS ID ! D-PAK S Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current IDM Drain Current VGSS Gate-Source Voltage IAR Avalanche Current dv/dt Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * TJ, TSTG TL " " ! TC = 25°C unless otherwise noted FQD12N20LTM_F085 200 - Continuous (TC = 100°C) PD ! " - Pulsed (Note 1) Units V 9.0 A 5.7 A 36 A ± 20 V (Note 1) 9.0 A (Note 2) 5.5 2.5 V/ns W 55 0.44 -55 to +150 W W/°C °C 300 °C Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 2.27 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FQD12N20LTM_F085 Rev. B 1 www.fairchildsemi.com FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET June 2010 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 200 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.14 VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A VGS = 5 V, ID = 4.5 A -- 0.22 0.25 0.28 0.32 Ω gFS Forward Transconductance VDS = 30 V, ID = 4.5 A -- 11.6 -- S -- 830 1080 pF -- 120 155 pF -- 17 22 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) (Note 3) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 11.6 A, RG = 25 Ω (Note 3, 4) VDS = 160 V, ID = 11.6 A, VGS = 5 V (Note 3, 4) -- 15 40 ns -- 190 390 ns -- 60 130 ns -- 120 250 ns -- 16 21 nC -- 2.8 -- nC -- 7.6 -- nC FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET Electrical Characteristics Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A ISM -- -- 36 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 9.0 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 11.6 A, dIF / dt = 100 A/µs (Note 3) -- -- 1.5 V -- 128 -- ns -- 0.56 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. ISD ≤ 11.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 3. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature FQD12N20LTM_F085 Rev. B 2 www.fairchildsemi.com VGS 10 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : ID , Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -1 10 150℃ 0 25℃ 10 -55℃ ※ Notes : 1. VDS = 30V 2. 250μs Pulse Test -1 -1 0 10 10 1 10 10 0 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.2 1 VGS = 5 V 0.9 VGS = 10V 0.6 0.3 0.0 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 0 6 12 18 24 30 10 36 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1800 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1500 1200 Capacitance [pF] IDR, Reverse Drain Current [A] 10 10 VGS, Gate-Source Voltage [V] RDS(on) [ Ω ], Drain-Source On-Resistance 1.5 Ciss 900 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 600 Crss 300 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET Typical Characteristics VDS = 40V VDS = 100V 8 VDS = 160V 6 4 2 ※ Note : ID = 11.6 A 0 -1 10 0 10 0 1 10 Figure 5. Capacitance Characteristics FQD12N20LTM_F085 Rev. B 0 5 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 5.8 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 9.0 2 Operation in This Area is Limited by R DS(on) 7.5 100 µs 1 10 10 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C 6.0 4.5 3.0 1.5 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0.0 25 2 10 10 50 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 0 ※ N o te s : 1 . Z θ J C ( t ) = 2 . 2 7 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T JM - T C = P D M * Z θ JC(t) 0 .2 0 .1 0 .0 5 10 -1 PDM 0 .0 2 t1 0 .0 1 Z θ JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve FQD12N20LTM_F085 Rev. B 4 www.fairchildsemi.com FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET Typical Characteristics FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET Typical Characteristics IAS, AVALANCHE CURRENT (A) 20 10 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] o STARTING TJ = 25 C o STARTING TJ = 125 C 1 0.001 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 Figure 12. Unclamped Inductive Switching Capability FQD12N20LTM_F085 Rev. B 5 www.fairchildsemi.com 50KΩ 12V 200nF VGS Same Type as DUT Qg 5V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG 5V RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on FQD12N20LTM_F085 Rev. B 6 td(off) t off tf FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET Gate Charge Test Circuit & Waveform www.fairchildsemi.com + DUT VDS _ I SD L Driver RG Same Type as DUT VGS VGS ( Driver ) I SD ( DUT ) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQD12N20LTM_F085 Rev. B 7 www.fairchildsemi.com DPAK MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 2.30 ±0.10 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET Package Dimensions 0.76 ±0.10 FQD12N20LTM_F085 Rev. B 8 www.fairchildsemi.com AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FQD12N20LTM_F085 Rev. B 9 www.fairchildsemi.com