QFET TM FQB34P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. • • • • • • • • • -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V Low gate charge ( typical 85 nC) Low Crss ( typical 170 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Qualified to AEC Q101 RoHS Compliant S ! D G! ● ● ▶ ▲ G S D2-PAK FQB Series Absolute Maximum Ratings Symbol VDSS ID ● ! D TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB34P10TM_F085 -100 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) Units V -33.5 A -23.5 A -134 A ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 2200 mJ IAR Avalanche Current (Note 1) -33.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 15.5 -6.0 3.75 mJ V/ns W 155 1.03 -55 to +175 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 0.97 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2012 Fairchild Semiconductor Corporation FQB34P10TM_F085 Rev. C1 1 www.fairchildsemi.com FQB34P10TM_F085 100V P-Channel MOSFET March 2012 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -100 -- -- V -- -0.1 -- V/°C VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 150°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA -2.0 -- -4.0 V -- 0.049 0.06 Ω -- 23 -- S Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -16.75 A gFS Forward Transconductance VDS = -40 V, ID = -16.75 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 2240 2910 pF -- 730 950 pF -- 170 220 pF ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -33.5 A, RG = 25 Ω (Note 4, 5) VDS = -80 V, ID = -33.5 A, VGS = -10 V (Note 4, 5) -- 25 60 -- 250 510 ns -- 160 330 ns -- 210 430 ns -- 85 110 nC -- 15 -- nC -- 45 -- nC A FQB34P10TM_F085 100V P-Channel MOSFET Electrical Characteristics Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -33.5 ISM -- -- -134 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -33.5 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -33.5 A, dIF / dt = 100 A/µs (Note 4) -- 160 -- ns -- 0.88 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L =3.9mH, IAS = -33.5A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -33.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQB34P10TM_F085 Rev. C1 2 www.fairchildsemi.com VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V 2 10 Top : -ID , Drain Current [A] -ID, Drain Current [A] 1 10 2 10 0 10 -1 10 175℃ 1 10 25℃ 0 10 -55℃ ※ Note : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = -40V 2. 250µ s Pulse Test -2 10 -1 -1 0 10 10 1 10 10 2 4 Figure 1. On-Region Characteristics -IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 2 VGS = - 10V 0.25 0.20 VGS = - 20V 0.15 0.10 0.05 ※ Note : TJ = 25℃ 1 10 0 10 25℃ 175℃ 25 50 75 100 125 150 175 10 200 0.0 0.5 6500 Coss 4500 Ciss 2.0 2.5 3.0 12 VDS = -20V 10 4000 -VGS, Gate-Source Voltage [V] 5000 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 1.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Capacitances [pF] ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test -1 0 -ID , Drain Current [A] ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 3500 3000 Crss 2500 10 10 0.30 5500 8 Figure 2. Transfer Characteristics 0.35 0.00 6 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] FQB34P10TM_F085 100V P-Channel MOSFET Typical Characteristics 2000 1500 1000 VDS = -50V VDS = -80V 8 6 4 2 ※ Note : ID = -33.5 A 500 0 -1 10 0 10 0 1 10 VDS, Drain-Source Voltage [V] 20 40 60 80 100 QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics FQB34P10TM_F085 Rev. C1 0 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -16.75 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 40 Operation in This Area is Limited by R DS(on) 35 2 100 µs -ID, Drain Current [A] -ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC 0 10 ※ Notes : 30 25 FQB34P10TM_F085 100V P-Channel MOSFET Typical Characteristics 20 15 10 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 5 -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area 10 75 100 125 150 175 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 10 ※ N ote s : 1. Z θ J C (t) = 0 .97 ℃ /W M a x. 2. D u ty F a cto r, D = t 1/t 2 3. T JM - T C = P DM * Z θ JC (t) 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 t1 sin g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u lse D u ra tio n [se c ] Figure 11. Transient Thermal Response Curve FQB34P10TM_F085 Rev. C1 4 www.fairchildsemi.com Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD VDD IAS BVDSS tp FQB34P10TM_F085 Rev. C1 VDS (t) ID (t) DUT -10V Time 5 www.fairchildsemi.com + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period FQB34P10TM_F085 100V P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt FQB34P10TM_F085 Rev. C1 6 www.fairchildsemi.com FQB34P10TM_F085 100V Channel MOSFET FQB34P10TM_F085 Rev. C1 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I60 FQB34P10TM_F085 Rev. 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