2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SA1416 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)120 (--)100 V (--)6 V Collector Current VEBO IC (--)1 A Collector Current (Pulse) ICP (--)2 A Collector Dissipation PC 500 mW Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Mounted on a ceramic board (250mm2✕0.8mm) V 1.3 W 150 °C --55 to +150 °C Marking 2SA1416 : AB 2SC3646 : CB Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010EA TK IM / O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/5 2SA1416 / 2SC3646 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)100V, IE=0A (--)100 nA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA DC Current Gain hFE fT VCE=(--)5V, IC=(--)100mA Gain-Bandwidth Product Output Capacitance Cob VCB=(--)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)400mA, IB=(--)40mA (--0.2)0.1 (--0.6)0.4 Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)400mA, IB=(--)40mA (--)0.85 (--)1.2 Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)120 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)100 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A Turn-ON Time ton See specified Test Circuit. (80)80 Storage Time tstg See specified Test Circuit. (700)850 ns Fall Time tf See specified Test Circuit. (40)50 ns 100* 400* VCE=(--)10V, IC=(--)100mA 120 MHz (13)8.5 pF (--)6 V V V ns *: The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 Package Dimensions unit : mm (typ) 7007B-004 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 INPUT RB RL VR 50Ω + 100μF + 470μF --5V 50V IC=10IB1=--10IB2=400mA (For PNP, the polarity is reversed) No.2005-2/5 2SA1416 / 2SC3646 IC -- VCE --1.0 A 0m --3 2SA1416 5m A 0m --2 --5mA --0.6 --3mA --0.4 --2mA --1mA --0.2 --1 --2 --3 --4 10mA 5mA 0.6 3mA 2mA 0.4 1mA IB=0mA 0 mA --300 --1.0mA --200 --0.5mA --100 IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 1.0mA 200 0.5mA 100 IB=0mA 0 10 20 30 40 50 ITR03529 IC -- VBE 1.2 2SC3646 VCE=5V --0.4 0.6 °C 25°C --25°C °C 25°C --25°C --0.6 0.8 0.4 Ta=7 5 Collector Current, IC -- A 1.0 Ta=7 5 Collector Current, IC -- A 300 Collector-to-Emitter Voltage, VCE -- V --0.2 0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03530 hFE -- IC 1000 5 DC Current Gain, hFE 25°C --25°C 7 5 7 --1.0 2 3 ITR03532 1.2 ITR03531 Ta=75°C 25°C --25°C 7 5 2 2 3 5 5 7 --0.1 Collector Current, IC -- A 1.0 2SC3646 VCE=5V 100 3 3 0.8 2 2 2 0.6 hFE -- IC 3 3 7 --0.01 0.4 Base-to-Emitter Voltage, VBE -- V 5 2 100 0.2 7 Ta=75° C 3 0 1000 2SA1416 VCE=--5V 7 DC Current Gain, hFE 1.5mA ITR03528 --0.8 10 2SC3646 2SA1416 VCE=--5V --1.0 0 5 ITR03527 400 0 --50 IC -- VBE --1.2 4 2.0mA 2.5 Collector Current, IC -- mA Collector Current, IC -- mA A --1.5mA 3 IC -- VCE 500 --2.0m 0 0 2 Collector-to-Emitter Voltage, VCE -- V 2SA1416 mA --2.5 --400 1 ITR03526 IC -- VCE --500 20mA 15mA 0.8 0 --5 Collector-to-Emitter Voltage, VCE -- V A 25m A 30m 0.2 IB=0mA 0 0 2SC3646 A Collector Current, IC -- A Collector Current, IC -- A A --10m -- --2 --0.8 IC -- VCE 1.0 A 15m 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR03533 No.2005-3/5 2SA1416 / 2SC3646 f T -- IC 2 2SA1416 / 2SC3646 f=1MHz 7 2SA1416 100 7 2SC3646 5 Cob -- VCB 100 2SA1416 / 2SC3646 VCE=10V 5 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 3 3 2 3 2 2SA 141 2SC 364 7 3 10 7 0.01 2 3 5 7 2 0.1 3 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --100 5°C 7 Ta= 5 --25°C 25°C 3 7 3 2 3 --0.1 Collector Current, IC -- A 2 --0.01 5 7 5 7 --1.0 3 2 Ta=--25°C 7 25°C 5 3 7 2 --0.01 3 75°C 5 7 --0.1 2 3 Collector Current, IC -- A 5 7 --1.0 DC op tio n 0.1 7 5 For PNP, minus sign is omitted 2SA1416 / 2SC3646 Single pulse Ta=25°C Mounted on a ceramic board (250mm2✕0.8mm) 7 1.0 Ta=75°C 5 3 --25°C 25°C 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 ITR03537 VBE(sat) -- IC 2SC3646 IC / IB=10 5 3 2 1.0 Ta=--25°C 7 5 25°C 7 0.01 2 3 75°C 5 7 0.1 2 3 5 7 2 1.0 ITR03535 Collector Current, IC -- A PC -- Ta 1.4 0m s era 5 7 1.6 10 1ms ms 10 3 2 0.01 7 5 100 3 2 Collector Dissipation, PC -- W IC=1A 2 2 2SA1416 / 2SC3646 ICP=2A 3 7 100 2 ITR03539 3 ITR03534 ASO 1.0 7 5 5 Collector Current, IC -- A 5 3 2 3 7 5 --1.0 2 10 5 10 2SA1416 IC / IB=10 7 7 2SC3646 IC / IB=10 ITR03536 VBE(sat) -- IC --10 5 VCE(sat) -- IC 2 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 7 5 7 2 1000 2SA1416 IC / IB=10 7 7 1.0 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV For PNP, minus sign is omitted 2 7 1.0 ITR03538 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 6 5 For PNP, minus sign is omitted Collector Current, IC -- A 6 10 2 3 5 7 10 2 3 5 Collector-to-Emitter Voltage, VCE -- 1.3 M ou 1.2 nt ed 1.0 on ac er am ic 0.8 bo ar No h 0.5 d( 25 0.6 0.4 0m m2 ✕ eat s ink 0.8 m 2 7 100 V ITR03540 0 m ) 0.2 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR03541 No.2005-4/5 2SA1416 / 2SC3646 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.2005-5/5