Ordering number:ENN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2003B [2SB1229/2SD1835] Features 5.0 4.0 4.0 5.0 · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 2 1 : Emitter 2 : Collector 3 : Base SANYO : NP 3 ( ) : 2SB1229 Specifications 1.3 1.3 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO IC (–)6 V (–)2 A ICP PC (–)3 A 0.75 Junction Temperature Tj 150 W ˚C Storage Temperature Tstg –55 to +150 ˚C Collector Current Collector Current (Pulse) Collector Dissipation V Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Conditions ICBO IEBO VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 hFE1 hFE2 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A fT Cob VCE=(–)10V, IC=(–)50mA VCE(sat) Ratings min typ 100* max Unit (–)100 nA (–)100 nA 560* 40 VCB=(–)10V, f=1MHz IC=(–)1A, IB=(–)50mA 150 MHz 12(22) pF 0.15 0.4 V (–0.3) (–0.7) V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1003TN (KT)/92098HA (KT)/4107KI/0296AT, TS No.2158–1/5 2SB1229/2SD1835 Continued from preceding page. Parameter Symbol Base-to-Emitter Saturation Voltage Ratings Conditions min (–)0.9 VBE(sat) IC=(–)1A, IB=(–)50mA V(BR)CBO IC=(–)10μA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO ton Turn-ON TIme Storage Time Fall Time Unit (–)1.2 V V (–)50 V (–)6 V See specified Test Circuit See specified Test Circuit 60(60) ns 550 ns (450) ns 30 ns 30 ns See specified Test Circuit tf max (–)60 IE=(–)10μA, IC=0 tstg typ * : The 2SB1229/2SD1835 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 OUTPUT IB2 INPUT RB VR RL 50Ω + 100μF + 470μF VBE= --5V VCC IC=10IB1= --10IB2=500mA, VCC=25V (For PNP, the polarity is reversed.) IC -- VCE --2.4 IC -- VCE 2.4 2SB1229 5 --5 0m A --1.6 --10mA --1.2 --8mA --6mA --0.8 --4mA --2mA --0.4 --0.4 --0.8 --1.2 --1.6 2SB1229 8mA 0.8 4mA 2mA IB=0 0.4 --3mA --2mA --400 --1mA 0.8 IB=0 0 0 --2 --4 --6 --8 --10 Collector-to-Emitter Voltage, VCE – V --12 ITR09362 1.6 2.0 2.4 ITR09361 IC -- VCE 1200 2SD1835 7mA 6mA 5mA 800 4mA 600 3mA 2mA 400 1mA 200 --200 1.2 Collector-to-Emitter Voltage, VCE – V 1000 --4mA --600 1.2 ITR09360 --5mA --800 15mA 0 Collector Current, IC – mA Collector Current, IC – mA --1000 1.6 --2.4 IC -- VCE --7mA --6mA 25mA 0 --2.0 Collector-to-Emitter Voltage, VCE – V --1200 0mA 0.4 IB=0 0 0 4 2.0 mA --20 Collector Current, IC – A Collector Current, IC – A --2.0 2SD1835 0mA 0 0 IB=0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE – V 12 ITR09363 No.2158–2/5 2SB1229/2SD1835 IC -- VBE --2.4 2SB1229 VCE= --2V Ta= 7 25°C --25°C 5°C --0.8 0 --0.2 --0.4 --0.6 --0.8 --1.0 0 --1.2 0.4 2SB1229 VCE= --2V 0.6 0.8 1.0 1.2 ITR09365 hFE -- IC 1000 2SD1835 VCE=2V 7 5 Ta=75°C 3 DC Current Gain, hFE DC Current Gain, hFE 0.2 Base-to-Emitter Voltage, VBE – V 5 25°C --25°C 2 100 7 Ta=75°C 25°C 3 2 --25°C 100 7 5 5 3 3 2 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 2 100 7 5 3 2 5 7 --100 32 5 7 --1000 2 2 3 5 7 1.0 2 3 ITR09367 fT -- IC 2SD1835 VCE=10V 7 5 3 2 100 7 5 3 2 3 10 2 3 Cob -- VCB 3 2 10 100 2 3 5 7 1000 2 3 ITR09369 2SD1835 f=1MHz 7 Output Capacitance, Cob -- pF 5 7 Cob -- VCB 100 2SB1229 f=1MHz 7 5 Collector Current, IC – mA ITR09368 100 5 3 2 10 7 7 5 --1.0 7 0.1 10 3 Collector Current, IC – mA 2 5 Collector Current, IC – A Gain-Bandwidth Product, fT – MHz 5 3 3 1000 2SB1229 VCE=10V 2 2 ITR09366 7 10 --10 7 0.01 3 fT -- IC 1000 Gain-Bandwidth Product, fT – MHz 0 ITR09364 hFE -- IC 7 0.8 0.4 Base-to-Emitter Voltage, VBE – V 1000 1.2 25 ° C --25°C --1.2 1.6 Ta=7 5°C --1.6 --0.4 Output Capacitance, Cob -- pF 2SD1835 VCE=2V 2.0 Collector Current, IC – A Collector Current, IC – A --2.0 0 IC -- VBE 2.4 2 3 5 7 2 3 5 7 --100 --10 Collector-to-Base Voltage, VCB -- V ITR09370 5 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 ITR09371 No.2158–3/5 2SB1229/2SD1835 VCE(sat) -- IC 2SB1229 IC / IB=20 3 2 2 1000 7 5 5 3 2 --100 7 5 5°C Ta=7 C --25° 3 2 C 25° 3 2 100 7 5 2 3 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 2 2 3 --25°C 7 0.01 Base-to-Emitter Saturation Voltage, VBE (sat) – V 3 2 25°C 7 75°C 5 5 7 0.1 2 3 5 7 Collector Current, IC – A 2 1.0 3 ITR09373 VBE(sat) -- IC 2SD1835 IC / IB=20 7 5 Ta= --25°C 3 10 2SB1229 IC / IB=20 --1.0 2 ITR09372 VBE(sat) -- IC 7 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 3 7 --0.01 3 2 2 3 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 2 2SB1229 / 2SD1835 IC =2 1m A s 1.0 7 5 10 0m op era tio n ms 10 DC s 3 2 0.1 7 5 3 2 0.01 7 5 3 Ta=25°C Single pulse (For PNP, minus sign is omitted.) 5 7 1.0 2 3 5 7 10 2 2 ITR09374 ASO ICP=3A 7 0.01 3 3 Collector-to-Emitter Voltage, VCE – V 5 7 100 ITR09376 3 5 7 0.1 2 3 5 Collector Current, IC – A 7 1.0 2 3 ITR09375 PC -- Ta 1000 Collector Dissipation, PC – mW 5 Collector Current, IC – A 25°C Ta=75°C 3 10 7 --0.01 --10 Base-to-Emitter Saturation Voltage, VBE (sat) – V 2SD1835 IC / IB=20 3 --1000 7 --10 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 2SB1229 / 2SD1835 800 750 600 400 200 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR09377 No.2158–4/5 2SB1229/2SD1835 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2003. Specifications and information herein are subject to change without notice. PS No.2158–5/5