2SA2186 Ordering number : ENA0269 2SA2186 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --50 V Collector-to-Emitter Voltage VCEO --50 V Emitter-to-Base Voltage VEBO --6 V IC --2 A --4 A Base Current ICP IB --400 Collector Dissipation PC 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Collector Current Collector Current (Pulse) mA Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current hFE1 hFE2 DC Current Gain Gain-Bandwidth Product fT Cob Output Capacitance Conditions VCB=--40V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--100mA VCE=--2V, IC=--1.5A VCE=--10V, IC=--300mA Collector-to-Emitter Saturation Voltage VCE(sat) VCB=--10V, f=1MHz IC=--1A, IB=--50mA Base-to-Emitterr Saturation Voltage VBE(sat) IC=--1A, IB=--50mA Ratings min typ Unit max 200 --1 µA --1 µA 560 40 420 MHz 16 pF --0.22 --0.43 V --0.9 --1.2 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2805EA MS IM TB-00001911 No. A0269-1/4 2SA2186 Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=--10µA, IE=0A IC=--1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10µA, IC=0A See specified Test Circuit. Turn-On Time ton tstg tf Storage Time Fall Time Ratings Conditions min typ Unit max --50 V --50 V --6 V 35 ns See specified Test Circuit. 200 ns See specified Test Circuit. 24 ns Package Dimensions unit : mm 7519-003 Switching Time Test Circuit 2.5 6.9 IB1 PW=20µs D.C.≤1% 1.45 IC OUTPUT IB2 1.0 INPUT RB RL 4.5 1.0 VR 1.0 50Ω + + 100µF 1.0 0.9 1 2 4.0 0.6 0.5 3 VBE=5V VCC= --25V IC=10IB1= --10IB2= --0.7A 0.45 2.54 2.54 470µF 1 : Emitter 2 : Collector 3 : Base SANYO : NMP IC -- VCE A --20m --1.8 --10mA --8mA --1.4 --1.2 --6mA --1.0 --4mA --0.8 --0.6 --2mA --0.4 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 --0.2 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Collector-to-Emitter Voltage, VCE -- V --1.8 --0.2 --0.4 --0.6 --0.8 VCE= --10V Ta=75°C 25°C 3 --25°C 2 100 7 5 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 --1.2 IT10527 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 5 --1.0 Base-to-Emitter Voltage, VBE -- V IT10526 VCE= --2V 7 3 --0.01 0 0 --2.0 hFE -- IC 1000 DC Current Gain, hFE --1.6 C --1.6 --25° --4 °C 25°C --30 --50 A 0m VCE= --2V Collector Current, IC -- A Collector Current, IC -- A --1.8 IC -- VBE --2.0 mA mA Ta= 75 --2.0 3 IT10528 7 5 3 2 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 3 IT10529 No. A0269-2/4 2SA2186 Cob -- VCB 100 VCE(sat) -- IC 7 f=1MHz IC / IB=10 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 7 5 3 2 10 3 2 --0.1 °C 75 7 = Ta 5 3 C 5° --2 °C 25 2 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 --0.01 --0.01 7 7 --0.1 2 3 5 7 --1.0 2 3 IT10531 VBE(sat) -- IC IC / IB=10 5 3 2 --0.1 °C 75 = Ta 7 3 25 2 3 5 7 --0.1 C 5° --2 5 °C 2 3 5 7 --1.0 Collector Current, IC -- A 2 2 --1.0 C Ta= --25° 7 75°C C ° 25 5 3 --0.01 3 7 5 Collector Current, IC -- A 2 Ta= --25°C 75°C 5 7 --0.1 2 3 5 7 --1.0 2 3 IT10533 ASO ICP= --4A <10µs IC= --2A 50 0µ s 10 ms 10 0m --1.0 7 5 1m s s DC 3 s 0µ 2 25°C 5 10 3 7 3 Collector Current, IC -- A IC / IB=20 --1.0 2 IT10532 VBE(sat) -- IC 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 IC / IB=20 2 3 Collector Current, IC -- A VCE(sat) -- IC --0.01 --0.01 2 IT10530 Base-to-Emitter Saturation Voltage, VBE(sat) -- V --1.0 3 op era tio 2 n --0.1 7 5 3 2 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 IT10534 PC -- Ta 1.0 Ta=25°C Single Pulse --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Emitter Voltage, VCE -- V 3 5 7 IT10535 Collector Dissipation, PC -- W 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10525 No. A0269-3/4 2SA2186 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. PS No. A0269-4/4