ONSEMI 2SA1707

Ordering number:ENN3093
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1707/2SC4487
High-Current Switching Applications
Features
Package Dimensions
· Adoption of FBET, MBIT processes.
· Large current capacity, wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
unit:mm
2064A
[2SA1707/2SC4487]
2.5
1.45
1.0
1.0
1.0
4.5
6.9
4.0
1.0
0.6
0.5
0.9
1
2
3
0.45
( ) : 2SA1707
2.54
2.54
Specifications
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(–)60
Collector-to-Emitter Voltage
VCEO
(–)50
V
Emitter-to-Base Voltage
VEBO
IC
(–)6
V
(–)3
A
ICP
PC
(–)6
A
1
W
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Collector Current
Collector Current (Pulse)
Collector Dissipation
V
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Conditions
ICBO
IEBO
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
hFE1
hFE2
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)3A
fT
VCE=(–)10V, IC=(–)50mA
Ratings
min
typ
100*
max
Unit
(–)1
µA
(–)1
µA
400*
35
150
* : 2SA1707/2SC4487 are classified by 100mA hFE as follows :
MHz
Continued on next page.
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83098HA(KT)/6299MO, TS No.3093-1/5
2SA1707/2SC4487
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(–)2A, IB=(–)100mA
Base-to-Emitter Saturation Voltage
VBE(sat)
Cob
IC=(–)2A, IB=(–)100mA
VCB=(–)10V, f=1MHz
Output Capacitance
Collector-to-Base Breakdown Voltage
Ratings
Conditions
min
Emitter-to-Base Breakdown Votage
Turn-ON TIme
V(BR)EBO
ton
IE=(–)10µA, IC=0
See specified Test Circuit
Storage Time
tstg
See specified Test Circuit
tf
See specified Test Circuit
Fall Time
max
Unit
(–0.35)
(–0.7)
V
0.2
0.5
V
(–)0.95
(–)1.2
V
(39)25
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
Collector-to-Emitter Breakdown Voltage
typ
pF
(–)60
V
(–)50
V
(–)6
V
70
ns
(450)
ns
650
ns
35
ns
Switching Time Test Circuit
IB1
IB2
OUTPUT
INPUT
PW=20µs
D.C.≤1%
RB
VR
RL
+
+
50Ω
100µF
470µF
VBE= --5V
VCC=25V
10IB1= --10IB2= IC=1A
(For PNP, the polarity is reversed.)
IC -- VCE
--5
2SA1707
2SC4487
--20mA
--2
--10mA
--5mA
--1
IB=0
--0.4
--0.8
--1.2
--1.6
A
m
--14
80m
A
20mA
10mA
5mA
1
IB=0
0.4
0.8
Collector Current, IC – A
--4mA
--0.8
--2mA
--0.4
2.0
2SC4487
8mA
7mA
1.6
--6mA
1.6
IC -- VCE
2.0
--8mA
1.2
Collector-to-Emitter Voltage, VCE – V ITR04305
ITR04304
--10mA
--1.2
40mA
2SA1707
A
--12m
--1.6
A
60m
2
0
0
--2.0
IC -- VCE
--2.0
3
100m
--50mA
Collector-to-Emitter Voltage, VCE – V
Collector Current, IC – A
Collector Current, IC – A
mA
00
mA
0
--10
--2
Collector Current, IC – A
--3
A
4
--4
0
0
IC -- VCE
5
6mA
5mA
1.2
4mA
3mA
0.8
2mA
0.4
1mA
0
0
IB=0
--4
--8
--12
--16
Collector-to-Emitter Voltage, VCE – V
IB=0
0
--20
ITR04306
0
4
8
12
16
20
Collector-to-Emitter Voltage, VCE – V ITR04307
No.3093-2/5
2SA1707/2SC4487
IC -- VBE
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE – V
2.0
1.6
1.2
0.8
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE – V
ITR04308
ITR04309
hFE -- IC
1000
2SA1707
VCE= --2V
7
2SC4487
VCE=2V
7
5
DC Current Gain, hFE
5
DC Current Gain, hFE
2.4
0
0
--1.2
hFE -- IC
1000
Ta=75°C
3
25°C
2
--25°C
3
Ta=75°C
25°C
--25°C
2
100
100
7
7
5
5
5 7 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
Collector Current, IC – A
3
3
2
100
7
5
3
2
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC – A
2
7
5
3
2
10
--1.0
2
3
5
7
--10
2
3
Collector-to-Base Voltage, VCB -- V
5
7
--100
ITR04314
2
3
5
ITR04311
2SC4487
VCE=10V
5
3
2
100
7
5
3
2
2
3
5 7
0.1
2
3
5 7
2
1.0
3
ITR04313
Cob -- VCB
5
2SC4487
f=1MHz
3
Output Capacitance, Cob -- pF
100
5 7 1.0
Collector Current, IC – A
2SA1707
f=1MHz
2
3
f T -- IC
ITR04312
3
2
7
10
0.01
3
Cob -- VCB
5
5 7 0.1
Collector Current, IC – A
Gain-Bandwidth Product, fT – MHz
5
3
3
1000
2SA1707
VCE= --10V
2
2
ITR04310
7
10
--0.01
5 7 0.01
5
f T -- IC
1000
Gain-Bandwidth Product, fT – MHz
2.8
0.4
0
Output Capacitance, Cob -- pF
2SC4487
VCE=2V
3.2
Collector Current, IC – A
--2.8
Ta=7
5°C
25°C
--25°C
Collector Current, IC – A
--3.2
IC -- VBE
3.6
2SA1707
VCE= --2V
Ta=
75°C
25°C
--25°
C
--3.6
2
100
7
5
3
2
10
1.0
2
3
5
7
10
2
3
Collector-to-Base Voltage, VCB -- V
5
7 100
ITR04315
No.3093-3/5
2SA1707/2SC4487
VCE(sat) -- IC
--1000
5
3
2
--100
7
5
°C
25
25°C
Ta= -75°C
3
2
5
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC – A
2
3
2
100
7
5
2 5°
C
Ta= --25°C
3
2
75°C
3
5 7 0.01
5
7 0.1
2
3
5
7 1.0
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
2
--1.0
Ta= --25°C
7
25°C
3
2
3
5
ITR04317
VBE(sat) -- IC
2SC4487
IC / IB=20
7
3
75°C
5
10
5
5
3
Collector Current, IC – A
2SA1707
IC / IB=20
7
2
ITR04316
VBE(sat) -- IC
--10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
5
10
--10
5
3
2
1.0
Ta= --25°C
25°C
7
75°C
5
3
5 7--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC – A
2
3
5
5 7 0.01
5
3
IC=3.0A
10
2
DC
1.0
0m
5
s
n
5
0.01
2
Ta=25°C
Single pulse
(For PNP, minus sign is omitted.)
3
5
7 1.0
2
3
5
3
5 7 1.0
2
3
5
ITR04319
1.0
0.1
3
2
2
2SA1707 / 2SC4487
tio
3
2
5 7 0.1
PC -- Ta
1.2
2SA1707 / 2SC4487
1m
10 s
ms
op
era
3
Collector Current, IC – A
Collector Dissipation, PC – W
ICP=6.0A
2
ITR04318
ASO
10
Collector Current, IC – A
2SC4487
IC / IB=20
7
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
7
VCE(sat) -- IC
1000
2SA1707
IC / IB=20
0.8
0.6
0.4
0.2
0
7
10
2
Collector-to-Emitter Voltage, VCE – V
3
5
7
ITR04320
0
20
40
60
80
100
120
Ambient Temperature, Ta – ˚C
140
160
ITR04321
No.3093-4/5
2SA1707/2SC4487
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.3093-5/5