Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. unit:mm 2064A [2SA1707/2SC4487] 2.5 1.45 1.0 1.0 1.0 4.5 6.9 4.0 1.0 0.6 0.5 0.9 1 2 3 0.45 ( ) : 2SA1707 2.54 2.54 Specifications 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO IC (–)6 V (–)3 A ICP PC (–)6 A 1 W Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Collector Current Collector Current (Pulse) Collector Dissipation V Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Conditions ICBO IEBO VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 hFE1 hFE2 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)3A fT VCE=(–)10V, IC=(–)50mA Ratings min typ 100* max Unit (–)1 µA (–)1 µA 400* 35 150 * : 2SA1707/2SC4487 are classified by 100mA hFE as follows : MHz Continued on next page. Rank R S T hFE 100 to 200 140 to 280 200 to 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 93003TN (KT)/83098HA(KT)/6299MO, TS No.3093-1/5 2SA1707/2SC4487 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)2A, IB=(–)100mA Base-to-Emitter Saturation Voltage VBE(sat) Cob IC=(–)2A, IB=(–)100mA VCB=(–)10V, f=1MHz Output Capacitance Collector-to-Base Breakdown Voltage Ratings Conditions min Emitter-to-Base Breakdown Votage Turn-ON TIme V(BR)EBO ton IE=(–)10µA, IC=0 See specified Test Circuit Storage Time tstg See specified Test Circuit tf See specified Test Circuit Fall Time max Unit (–0.35) (–0.7) V 0.2 0.5 V (–)0.95 (–)1.2 V (39)25 V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Collector-to-Emitter Breakdown Voltage typ pF (–)60 V (–)50 V (–)6 V 70 ns (450) ns 650 ns 35 ns Switching Time Test Circuit IB1 IB2 OUTPUT INPUT PW=20µs D.C.≤1% RB VR RL + + 50Ω 100µF 470µF VBE= --5V VCC=25V 10IB1= --10IB2= IC=1A (For PNP, the polarity is reversed.) IC -- VCE --5 2SA1707 2SC4487 --20mA --2 --10mA --5mA --1 IB=0 --0.4 --0.8 --1.2 --1.6 A m --14 80m A 20mA 10mA 5mA 1 IB=0 0.4 0.8 Collector Current, IC – A --4mA --0.8 --2mA --0.4 2.0 2SC4487 8mA 7mA 1.6 --6mA 1.6 IC -- VCE 2.0 --8mA 1.2 Collector-to-Emitter Voltage, VCE – V ITR04305 ITR04304 --10mA --1.2 40mA 2SA1707 A --12m --1.6 A 60m 2 0 0 --2.0 IC -- VCE --2.0 3 100m --50mA Collector-to-Emitter Voltage, VCE – V Collector Current, IC – A Collector Current, IC – A mA 00 mA 0 --10 --2 Collector Current, IC – A --3 A 4 --4 0 0 IC -- VCE 5 6mA 5mA 1.2 4mA 3mA 0.8 2mA 0.4 1mA 0 0 IB=0 --4 --8 --12 --16 Collector-to-Emitter Voltage, VCE – V IB=0 0 --20 ITR04306 0 4 8 12 16 20 Collector-to-Emitter Voltage, VCE – V ITR04307 No.3093-2/5 2SA1707/2SC4487 IC -- VBE --2.4 --2.0 --1.6 --1.2 --0.8 --0.4 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V 2.0 1.6 1.2 0.8 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE – V ITR04308 ITR04309 hFE -- IC 1000 2SA1707 VCE= --2V 7 2SC4487 VCE=2V 7 5 DC Current Gain, hFE 5 DC Current Gain, hFE 2.4 0 0 --1.2 hFE -- IC 1000 Ta=75°C 3 25°C 2 --25°C 3 Ta=75°C 25°C --25°C 2 100 100 7 7 5 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC – A 3 3 2 100 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 7 5 3 2 10 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 --100 ITR04314 2 3 5 ITR04311 2SC4487 VCE=10V 5 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 2 1.0 3 ITR04313 Cob -- VCB 5 2SC4487 f=1MHz 3 Output Capacitance, Cob -- pF 100 5 7 1.0 Collector Current, IC – A 2SA1707 f=1MHz 2 3 f T -- IC ITR04312 3 2 7 10 0.01 3 Cob -- VCB 5 5 7 0.1 Collector Current, IC – A Gain-Bandwidth Product, fT – MHz 5 3 3 1000 2SA1707 VCE= --10V 2 2 ITR04310 7 10 --0.01 5 7 0.01 5 f T -- IC 1000 Gain-Bandwidth Product, fT – MHz 2.8 0.4 0 Output Capacitance, Cob -- pF 2SC4487 VCE=2V 3.2 Collector Current, IC – A --2.8 Ta=7 5°C 25°C --25°C Collector Current, IC – A --3.2 IC -- VBE 3.6 2SA1707 VCE= --2V Ta= 75°C 25°C --25° C --3.6 2 100 7 5 3 2 10 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 ITR04315 No.3093-3/5 2SA1707/2SC4487 VCE(sat) -- IC --1000 5 3 2 --100 7 5 °C 25 25°C Ta= -75°C 3 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 2 100 7 5 2 5° C Ta= --25°C 3 2 75°C 3 5 7 0.01 5 7 0.1 2 3 5 7 1.0 Base-to-Emitter Saturation Voltage, VBE (sat) –V 2 --1.0 Ta= --25°C 7 25°C 3 2 3 5 ITR04317 VBE(sat) -- IC 2SC4487 IC / IB=20 7 3 75°C 5 10 5 5 3 Collector Current, IC – A 2SA1707 IC / IB=20 7 2 ITR04316 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) –V 5 10 --10 5 3 2 1.0 Ta= --25°C 25°C 7 75°C 5 3 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 5 5 7 0.01 5 3 IC=3.0A 10 2 DC 1.0 0m 5 s n 5 0.01 2 Ta=25°C Single pulse (For PNP, minus sign is omitted.) 3 5 7 1.0 2 3 5 3 5 7 1.0 2 3 5 ITR04319 1.0 0.1 3 2 2 2SA1707 / 2SC4487 tio 3 2 5 7 0.1 PC -- Ta 1.2 2SA1707 / 2SC4487 1m 10 s ms op era 3 Collector Current, IC – A Collector Dissipation, PC – W ICP=6.0A 2 ITR04318 ASO 10 Collector Current, IC – A 2SC4487 IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 VCE(sat) -- IC 1000 2SA1707 IC / IB=20 0.8 0.6 0.4 0.2 0 7 10 2 Collector-to-Emitter Voltage, VCE – V 3 5 7 ITR04320 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR04321 No.3093-4/5 2SA1707/2SC4487 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. PS No.3093-5/5