FAIRCHILD RHRP30120

RHRP30120
November 2013
Data Sheet
30 A, 1200 V, Hyperfast Diode
Features
• Hyperfast Recovery trr = 85 ns (@ IF = 30 A)
The RHRP30120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
PACKAGE
Packaging
BRAND
JEDEC TO-220AC
RHRP30120
TO-220AC
RHR30120
ANODE
CATHODE
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
Symbol
K
A
Absolute Maximum Ratings TC = 2 5 oC
RHRP30120
UNIT
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM
1200
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
1200
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
1200
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
30
A
60
A
300
A
(TC = 78oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60 Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
125
W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
30
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
-65 to 175
oC
©2001 Fairchild Semiconductor Corporation
RHRP30120 Rev. C1
1
www.fairchildsemi.com
RHRP30120
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
SYMBOL
TEST CONDITION
MIN
TYP
MAX
IF = 30 A
-
-
3.2
V
IF = 3 0 A , T C = 1 5 0 oC
-
-
2.6
V
VR = 1200 V
-
-
250
µA
VR = 1200 V, TC = 1 5 0 oC
-
-
1
mA
IF = 1 A , d i F/dt = 100 A/µs
-
-
65
ns
IF = 3 0 A , d i F/dt = 100 A/µs
-
-
85
ns
ta
IF = 3 0 A , d i F/dt = 100 A/µs
-
48
-
ns
tb
IF = 3 0 A , d i F/dt = 100 A/µs
-
22
-
ns
-
-
1.2
oC/W
VF
IR
trr
RθJC
UNIT
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
Trr = Reverse recovery time (See Figure 6), summation of ta + t b.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
R θJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
200
500
100
100
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
Typical Performance Curves
175oC
10
100 oC
25oC
175 oC
10
100 oC
1.0
0.1
0.01
25 oC
1
0
0.001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4.5
VF, FORWARD VOLTAGE (V)
400
600
800
1000
1200
VR, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
©2001 Fairchild Semiconductor Corporation
RHRP30120 Rev. C1
200
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
www.fairchildsemi.com
RHRP30120
Typical Performance Curves
(Continued)
IF(AV), AVERAGE FORWARD CURRENT (A)
100
t, TIME (ns)
75
t rr
50
ta
25
tb
0
10
1
30
40
30
DC
20
SQ. WAVE
10
0
25
50
75
100
125
175
150
TC, CASE TEMPERATURE (oC)
IF, FORWARD CURRENT (A)
FIGURE 3. trr, ta AND t b CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
CURRENT
SENSE
DUT
RG
IF
+
VGE
-
IGBT
t1
dIF
trr
dt
ta
tb
0
VDD
0.25 IRM
t2
IRM
FIGURE 5. trr TEST CIRCUIT
FIGURE 6. trr WAVEFORMS AND DEFINITIONS
I MAX = 1.225A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
VAVL
L
CURRENT
SENSE
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
t0
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
RHRP30120 Rev. C1
t1
t2
t
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
3
www.fairchildsemi.com
RHRP30120 — Hyperfast Diode
Mechanical Dimensions
Figure 9. TO-220 2L - TO-220, MOLDED, 2LD
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-002.
©2001 Fairchild Semiconductor Corporation
RHRP30120 Rev. C1
4
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2001 Fairchild Semiconductor Corporation
RHRP30120 Rev. C1
5
www.fairchildsemi.com
RHRP30120 — Hyperfast Diode
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