SANYO LB11620GP

Ordering number : ENA1913A
LB11620GP
Monolithic Digital IC
Brushless Motor Driver
Overview
The LB11620GP is a direct PWM drive pre-driver IC that is optimal for three-phase power brushless motors. A motor
driver circuit with the desired output capability (voltage and current) can be implemented by adding discrete transistors or
other power devices to the outputs of this IC. Since the LB11620GP is provided in a miniature package, it is also
appropriate for use with miniature motors as well.
Features
• Three-phase bipolar drive
• Direct PWM drive (input of either a control voltage or a variable-duty PWM signal)
• Built-in forward/reverse switching circuit
• 5V regulator output (VREG pin)
• Built-in current limiter circuit (0.25V (typical) reference voltage)
• Built-in under voltage protection circuit
• Built-in automatic recovery type constraint protection circuit (ON: OFF=1: 18) with protection operating state
discrimination output (RD pin)
• Hall signal pulse outputs
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Supply voltage 1
VCC max
VCC pin
Output current
IO max
Allowable power dissipation
Pd max
Operating temperature
Storage temperature
Ratings
Unit
18
V
UL, VL, WL, UH, VH, WH pins
30
mA
*Mounted on a circuit board.
1.0
W
Topr
-30 to +100
°C
Tstg
-55 to +150
°C
* Mounted on a circuit board: 40.0mm×50.0mm×0.8mm, glass epoxy board.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
20211 SY 20110131-S00004/D2210 SY 20101213-S00003 No.A1913-1/13
LB11620GP
Recommended Operating Ranges at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage range 1-1
VCC1-1
VCC pin
Supply voltage range 1-2
VCC1-2
VCC pin, with VCC shorted to VREG
8 to 17
Output current
IO
UL, VL, WL, UH, VH, WH pins
5 V constant voltage output current
IREG
HP pin voltage
VHP
0 to 17
V
HP pin output current
IHP
0 to 15
mA
RD pin voltage
VRD
0 to 17
V
RD pin output current
IRD
0 to 15
mA
4.5 to 5.5
V
V
25
mA
-30
mA
Electrical Characteristics at Ta = 25°C, VCC = 12V
Parameter
Symbol
Ratings
Conditions
min
Supply voltage 1
typ
ICC1
Unit
max
12
16
mA
5.0
5.3
V
mV
5V constant voltage output (VREG pin)
Output voltage
VREG
4.7
Line regulation
ΔVREG1
VCC = 8 to 17V
40
100
Load regulation
ΔVREG2
IO = -5 to -20mA
10
30
Temperature coefficient
ΔVREG3
Design target
0
mV
mV/°C
Low-voltage protection circuit (VREG pin)
Operating voltage
VSDL
3.5
3.7
3.9
V
Clear voltage
VSDH
3.95
4.15
4.35
V
Hysteresis
ΔVSD
0.3
0.45
0.6
V
0.2
0.5
V
0.9
1.2
V
10
μA
Output Block
Output voltage 1-1
VOUT1-1
Low level IO = 400μA
Output voltage 1-2
VOUT1-2
Low level IO = 10mA
Output voltage 2
VOUT2
High level IO = -20mA
Output leakage current
IOleak
VCC-1.1
VCC-0.9
V
Hall Amplifier Block
Input bias current
IHB (HA)
Common-mode input voltage range 1
VICM1
When a Hall effect sensor is used
-2
Common-mode input voltage range 2
VICM2
For single-sided input bias
μA
-0.5
0.5
VCC-2.0
V
0
VCC
V
(Hall IC application)
Hall input sensitivity
80
Hysteresis
ΔVIN (HA)
Input voltage low → high
VSLH (HA)
Input voltage high → low
VSHL (HA)
15
mVp-p
24
40
mV
5
12
20
mV
-20
-12
-5
mV
PWM Oscillator (PWM pin)
High-level output voltage
VOH (PWM)
2.75
3.0
3.25
V
Low-level output voltage
VOL (PWM)
1.2
1.35
1.5
V
External capacitor charge current
ICHG
VPWM = 2.1V
-120
-90
-65
μA
Oscillator frequency
f (PWM)
C = 2000pF
Amplitude
V (PWM)
1.4
1.6
1.9
Vp-p
Input bias current
IB (CTL)
-1
1
Common-mode input voltage range
VICM
0
VREG-1.7
Input voltage 1
VCTL1
Output duty 100%
Input voltage 2
VCTL2
Input voltage 1L
VCTL1L
22
kHz
EI+ pin
μA
V
3.0
V
Output duty 0%
1.35
V
Design target value.
2.82
V
1.29
V
3.18
V
1.44
V
When VREG = 4.7V, 100%
Input voltage 2L
VCTL2L
Design target value.
When VREG = 4.7V, 0%
Input voltage 1H
VCTL1H
Design target value.
When VREG = 5.3V, 100%
Input voltage 2H
VCTL2H
Design target value.
When VREG = 5.3V, 0%
Continued on next page
No.A1913-2/13
LB11620GP
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
HP pin
Output saturation voltage
VHPL
IO = 10mA
Output leakage current
IHPleak
VO = 18V
0.2
0.5
V
10
μA
CSD oscillator (CSD pin)
High-level output voltage
VOH (CSD)
2.7
3.0
3.3
V
Low-level output voltage
VOL (CSD)
0.7
1.0
1.3
V
External capacitor charge current
ICHG1
VCSD = 2V
-3.15
-2.5
-1.85
μA
External capacitor discharge current
ICHG2
VCSD = 2V
0.1
0.14
0.18
Charge/discharge current ratio
RCSD
Charge current /discharge current
15
18
21
Low-level output voltage
VRDL
IO = 10mA
0.2
0.5
V
Output leakage current
IL (RD)
VO = 18V
10
μA
VRF
RF-GND
0.275
V
μA
Times
RD pin
Current limiter circuit (RF pin)
Limiter voltage
0.225
0.25
PWMIN pin
Input frequency
f (PI)
60
kHz
High-level input voltage
VIH (PI)
2.0
VREG
V
Low-level input voltage
VIL (PI)
0
1.0
V
Input open voltage
VIO (PI)
VREG-0.5
VREG
V
Hysteresis
VIS (PI)
High-level input current
IIH (PI)
VPWMIN = VREG
Low-level input current
IIL (PI)
VPWMIN = 0V
0.2
0.25
0.4
V
-10
0
10
μA
-130
-90
μA
F/R pin
High-level input voltage
VIH (FR)
2.0
VREG
V
Low-level input voltage
VIL (FR)
0
1.0
V
Input open voltage
VIO (FR)
VREG-0.5
VREG
V
Hysteresis
VIS (FR)
0.2
0.25
0.4
V
High-level input current
IIH (FR)
-10
0
10
μA
Low-level input current
IIL (FR)
-130
-90
High-level input voltage
VIH (N1)
2.0
VREG
V
Low-level input voltage
VIL (N1)
0
1.0
V
Input open voltage
VIO (N1)
High-level input current
IIH (N1)
VN1 = VREG
Low-level input current
IIL (N1)
VN1 = 0V
μA
N1 pin
VREG-0.5
-10
0
-130
-100
VREG
V
10
μA
μA
No.A1913-3/13
LB11620GP
Package Dimensions
unit : mm (typ)
3322A
SIDE VIEW
(0.13)
(0.125)
3.5
0.4
3.5
(C0.17)
24
2 1
(0.5)
0.5
(0.035)
0.8
SIDE VIEW
0.25
Pd max
1.2
BOTTOM VIEW
Allowable power dissipation, Pd max - W
TOP VIEW
Ta
Specified circuit board : 40.0×50.0×0.8mm3
glass epoxy board
1.0
0.8
0.6
0.40
0.4
0.2
0
-30
0
SANYO : VCT24(3.5X3.5)
30
60
90
120
Ambient temperature, Ta - C
Pin Assignment
WH
RF
GND
18
17
16
VCC VREG
15
14
EI+
13
WL 19
12 N1
VH 20
11 HP
VL 21
10
F/R
LB11620GP
UH 22
9
PWMIN
UL 23
8
CSD
IN1- 24
7
RD
1
2
3
4
5
6
IN1+
IN2-
IN2+
IN3-
IN3+
PWM
No.A1913-4/13
LB11620GP
• Three-Phase Logic Truth Table (IN = “H” indicates the state where IN+ > IN-)
F/R = “L”
F/R=“H”
Output
IN1
IN2
IN3
IN1
IN2
IN3
PWM
1
H
L
H
L
H
L
VH
UL
2
H
L
L
L
H
H
WH
UL
3
H
H
L
L
L
H
WH
VL
4
L
H
L
H
L
H
UH
VL
5
L
H
H
H
L
L
UH
WL
6
L
L
H
H
H
L
VH
WL
• PWMIN pin
Input state
State
High or open
Output off
Low
Output on
If the PWM pin is not used, the input must be held at the low level.
• N1 pin
Input state
HP output
High or open
Three Hall sensor synthesized output
Low
Single Hall sensor output
Explanation of Pin Functions
Pin No.
3, 2
Pin
IN1+, IN1IN2+, IN2-
Hall sensor inputs from each motor phase.
The logic high state indicates that IN+ > IN-.
5, 4
IN3+, IN3-
If inputs are provided by a Hall effect sensor IC, the common-mode input range is expanded by biasing either the + or -
6
PWM
1, 24
Description
input.
Functions as both the PWM oscillator frequency setting pin and the initial reset pulse setting pin. Connect a capacitor
between this pin and ground.
7
RD
Lock (motor constrained) detection state output. This output is turned on when the motor is turning and off when the lock
protection function detects that the motor has been stopped. This is an open collector output.
8
CSD
Sets the operating time for the lock protection circuit.
Connect a capacitor between this pin and ground. Connect this pin to ground if the lock protection function is not used.
9
PWMIN
PWM pulse signal input. The output goes to the drive state when this pin is low and to the off state when this pin is high
or open. To use this pin for control, a CTL amplifier input such that the TOC pin voltage goes to the 100% duty state
must be provided.
10
F/R
Forward/reverse control input
11
HP
Hall signal output (HP output). This provides either a single Hall sensor output or a synthesized 3-sensor output.
12
N1
Hall signal output (HP output) selection
13
EI+
CTL amplifier + (no inverting) input. The PWMIN pin must be held at the low level to use this input for motor control
14
VREG
5V regulator output (Used as the control circuit power supply. A low-voltage protection circuit is built in.)
Connect a capacitor between this pin and ground for stabilization.
15
VCC
Power supply. Connect a capacitor between this pin and ground to prevent noise and other disturbances from affecting
this IC.
16
GND
17
RF
Ground
Output current detection. The current detection resistor (Rf) voltage is sensed by the RF pin to implement current
detection.
The maximum output current is set by RF to be IOUT = 0.25/Rf.
22
UH
Outputs (PWM outputs).
20
VH
These are push-pull outputs.
18
WH
23
UL
Outputs
21
VL
These are push-pull outputs.
19
WL
No.A1913-5/13
LB11620GP
Hall Sensor Signal Input/Output Timing Chart
F/R = " L "
IN1
IN2
IN3
UH
VH
WH
UL
VL
WL
F/R = " H "
IN1
IN2
IN3
UH
VH
WH
UL
VL
WL
Sections shown in gray are PWM output periods.
No.A1913-6/13
CTL
HP
VREG
PWMIN
PWM
EI+
PWM
IN
PWM
OSC
+
-
F/R
F/R
IN1
N1
COMP
VCC
IN1+ IN1-
HP
LOGIC
RD
RD
VREG
LVSD
IN2+ IN2-
IN3+ IN3-
HALL
HYS AMP
HALL LOGIC
CONTROL
LOGIC
CSD
OSC
CSD
+
GND
CURR
LIM
PRI
DRIVER
VREG
RF
WL
WH
VL
VH
UL
UH
VCC
VREG
+
5V
+
VM
LB11620GP
Block Diagram and Application Example 1
Bipolar transistor drive (high side PWM)
Using a 5V power supply
No.A1913-7/13
HP
VREG
PWMIN
PWM
EI+
PWM
IN
PWM
OSC
+
-
F/R
F/R
IN1
N1
COMP
VCC
IN1+ IN1-
HP
LOGIC
RD
RD
VREG
LVSD
IN2+ IN2-
IN3+ IN3-
HALL
HYS AMP
HALL LOGIC
CONTROL
LOGIC
CSD
OSC
CSD
+
GND
CURR
LIM
PRI
DRIVER
VREG
RF
WH
WL
VH
VL
UH
UL
VCC
VREG
Tr
Tr
Tr
+
VM(12V)
LB11620GP
Application Example 2
54 MOS transistor drive (low side PWM)
Using a 12V single-voltage power supply
No.A1913-8/13
HP
VREG
PWMIN
PWM
EI+
PWM
IN
PWM
OSC
+
-
F/R
F/R
IN1
N1
COMP
VCC
IN1+ IN1-
HP
LOGIC
RD
RD
VREG
LVSD
IN2+ IN2-
IN3+ IN3-
HALL
HYS AMP
HALL LOGIC
CONTROL
LOGIC
CSD
OSC
CSD
+
GND
CURR
LIM
PRI
DRIVER
VREG
RF
WH
WL
VH
VL
UH
UL
VCC
VREG
+
VCC(12V)
+
VM(24V)
LB11620GP
Application Example 3
MOS transistor drive (low side PWM)
Using a VCC = 12V, VM = 24V power supply system
No.A1913-9/13
HP
VREG
PWMIN
PWM
EI+
PWM
IN
PWM
OSC
+
-
F/R
F/R
IN1
N1
COMP
VCC
IN1+ IN1-
HP
LOGIC
RD
RD
VREG
LVSD
IN2+ IN2-
IN3+ IN3-
HALL
HYS AMP
HALL LOGIC
CONTROL
LOGIC
CSD
OSC
CSD
+
GND
CURR
LIM
PRI
DRIVER
VREG
RF
WH
WL
VH
VL
UH
UL
VCC
VREG
+
VM(24V)
LB11620GP
Application Example 4
MOS transistor drive (low side PWM)
Using a 24V single-voltage power supply
No.A1913-10/13
LB11620GP
Pin Functions
PIN No.
PIN name
24
IN1-
Hall input pin.
Function
1
IN1+
IN+ > IN- to “H”, IN+ < IN- to “L”.
2
IN2-
Connect the capacitor between IN+ and IN-
3
IN2+
when the noise of the hall signal becomes a
4
IN3-
problem.
5
IN3+
6
PWM
Equivalent circuit
VCC
1
Functions as both the PWM oscillator
3
24
5
2
4
VREG
frequency setting pin and the initial reset
pulse setting pin. Connect a capacitor
between this pin and ground. It is possible to
set it to about 22kHz with C=2000pF.
6
7
RD
Lock (motor constrained) detection state
VREG
output. This output is turned on when the
motor is turning and off when the lock
7 11
protection function detects that the motor has
been stopped.
11
HP
Hall signal output pin.
Two kinds of outputs can be selected by
setting the N1 pin.
8
CSD
Sets the operating time for the lock protection
VREG
circuit.
Connect a capacitor between this pin and
ground. Connect this pin to ground if the lock
protection function is not used.
9
PWMIN
PWM pulse signal input. The output goes to
8
VREG
the drive state when this pin is low and to the
off state when this pin is high or open. To use
this pin for control, a CTL amplifier input such
that the TOC pin voltage goes to the 100%
9 10
duty state must be provided.
10
F/R
Forward/reverse control input.
12
N1
Hall signal output (HP output) selection.
VREG
12
Continued on next page
No.A1913-11/13
LB11620GP
Continued from preceding page.
PIN No.
PIN name
13
EI+
Function
CTL amplifier + (no inverting) input. The
PWMIN pin must be held at the low level to
Equivalent circuit
VCC
use this input for motor control.
13
14
VREG
Stabilizing supply output pin. (5V output)
Connect a capacitor between this pin and
VCC
ground for stabilization. (about 0.1μF level)
14
15
VCC
Power supply. Connect a capacitor between
this pin and ground to prevent noise and
other disturbances from affecting this IC.
16
GND
17
RF
Ground
Output current sensing pin.
VREG
The low resistance is connected between RF
and GND. It sets it by output maximum
current IOUT=0.25/Rf.
17
18
WH
Output pin. (Driving external TR output)
19
WL
The duty is controlled on UH, VH, and WH
20
VH
side.
21
VL
22
UH
23
UL
VCC
18 19 20
21 22 23
PS No.A1913-12/13
LB11620GP
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2011. Specifications and information herein are subject
to change without notice.
PS No.A1913-13/13