Ordering number : ENA1641 CMOS IC LV51142T 1-Cell Lithium-Ion Battery Protection IC Overview The LV51142T is protection IC for rechargeable Li-ion battery by high withstand voltage CMOS process. The LV51142T protect single-cell Li-ion battery from over-charge, over-discharge, charge over-current and discharge over-current. Features • High accuracy detection voltage • Delay time (internal adjustment) • Low current consumption Over-charge detection Over-charge hysteresis Over-discharge detection Charge over-current detection Discharge over-current detection ±25mV ±25mV ±2.5% ±30mV ±20mV Operation Over-discharge condition Typ. 3.0μA Max. 0.1μA • 0V cell battery charging function • The over-discharge detection is released only when the charger is connected. Specifications Absolute Maximum Ratings/Ta=25℃ Parameter Supply voltage Input voltage of VM Symbol Conditions Ratings Unit VDD VSS-0.3 to VSS+7 V VM VDD-28 to VDD+0.3 V Output voltage of CO VCO VM-0.3 to VDD+0.3 V Output voltage of DO VDO VSS-0.3 to VDD+0.3 V Allowable power dissipation PD 350 mW Operating temperature Topr -40 to +85 °C Storage temperature Tstg -55 to +125 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. D2409 SY 20091221-S00001 No.A1641-1/13 LV51142T Electrical Characteristics at Topr = 25°C, unless otherwise specified Parameter Symbol Conditions Ratings Test circuit min typ Unit max Detection voltage Over-charge detection voltage VC Over-charge hysteresis voltage VHc 1 Over-discharge detection voltage (*2) Vdc 1 Charge over-current detection voltage VIc 2 Discharge over-current detection voltage VIdc Load short-circuiting detection voltage Vshort 1 4.175 4.200 4.225 V 0.175 0.2 0.225 V 2.730 2.800 2.870 V -0.150 -0.120 -0.090 V 2 0.100 0.120 0.140 V Based on VDD, VDD = 3.5V 2 -1.7 -1.3 -1.0 V 1.8 7.0 V Input voltage Input voltage between VDD and VSS VDD Internal circuit operating voltage - 0V battery charge starting charger voltage Vcha Acceptable 3 0.9 1.4 V Current consumption on operation Iopr VDD = 3.5V, VM = 0V 4 3.0 6.0 μA Current consumption on shutdown Isdn VDD = VM = 1.8V 4 0.1 μA CO : Pch ON resistance Rcop CO = 3.0V, VDD = 3.5V, VM = 0V 5 1.5 3.0 4.5 kΩ CO : Nch ON resistance Rcon CO = 0.5V, VDD = 4.6V, VM = 0V 5 0.5 1.0 1.5 kΩ DO : Pch ON resistance Rdop DO = 3.0V, VDD = 3.5V, VM = 0V 5 1.7 3.5 5.0 kΩ DO : Nch ON resistance Rdon DO = 0.5V, VDD = VM = 1.8V 5 1.7 3.5 5.0 kΩ Discharge over-current release resistance Rdwn VDD = 3.5V, VM = 1.0V 5 15.0 30.0 60.0 kΩ Current consumption Output resistance Detection delay time Over-charge detection delay time tc VDD = VC-0.2V→VC+0.2V, VM = 0V 6 0.70 1.0 1.30 s Over-discharge detection delay time tdc VDD = Vdc+0.2V→Vdc-0.2V, 6 21.7 31.0 40.3 ms 6 5.6 8.0 10.4 ms VM = 0V Charge over-current detection delay time Discharge over-current detection delay time Load short-circuiting detection delay time tic VDD = 3.0V, VM = 0V→-1.0V tidc VDD = 3.0V, VM = 0V→1.0V 6 5.6 8.0 10.4 ms tshort VDD = 3.0V, VM = 0V→3.0V 6 190 370 550 μs 6 1.0 2.0 3.0 ms 6 8.0 16.0 24.0 ms Release delay time Release delay time 1 trel1 Over-discharge release Charge over-current release (*1) Discharge over-current release Load short-circuiting release Release delay time 2 Over-charge release trel2 VDD = VC+0.2V→VC-0.2V, VM = 1.0V Note :*1 When the charger is connected under over-discharge , this means the time after the over-discharge detection is released. *2 The over-discharge detection is released at this voltage only when the charger is connected. The over-discharge detection isn't released if the charger isn't connected. No.A1641-2/13 LV51142T Package Dimensions unit : mm (typ) 3356 Pd max -- Ta 2.9 0.4 2.8 1.6 6 (0.5) 2 0.95 0.15 Specified board : 33×5×1.0mm3 glass epoxy 0.35 (Both sides substrate) 0.3 0.2 0.14 0.1 0 – 40 0 40 80 120 Ambient temperature, Ta – °C 0.05 0.8 (1.2) 0.4 1.3 MAX 1 Allowable power dissipation, Pd max – W 0.4 SANYO : SOT-23-6 Pin Assignment VSS VDD NC 6 5 4 1 DO 2 3 VM CO Top view Pin Function Pin No. Pin Name 1 DO FET gate connection for discharge control (CMOS output) Description 2 VM Voltage monitoring for charger negative 3 CO FET gate connection for charge control (CMOS output) 4 NC N/C 5 VDD Positive power input 6 VSS Negative power input No.A1641-3/13 LV51142T Block Diagram Oscillator Counter VDD Level Shifter CO Control Circuit + Over-charge Detector Short Detector Charge Over-current Detector + Over-discharge Detector Discharge Over-current Detector + - VM + - DO VSS Measurement Conditions • Over-charge detection voltage, Over-charge hysteresis voltage --- [Circuit 1] Set V1 = 3.0V and V2 = 0V. Over-charge detection voltage VC is V1 at which VCO goes "Low" from "High" when V1 is gradually increased from 3.0V. Then IC is released from the over-charge state and VCO goes "High" from "Low" at the voltage "Measured VC-VHc" when V1 is gradually decreased. If V2 is set to the greater value than discharge over-current detection voltage VIdc in the over-charge state, VHc is canceled and then IC is released from the over-charge state at VC. • Over-discharge detection voltage --- [Circuit 1] Set V1 = 3.0V and V2 = 0V. Over-discharge detection voltage Vdc is V1 at which VDO goes "Low" from "High" when V1 is gradually decreased from 3.0V. Next, set V2 under to charge over-current detection voltage VIc. Then IC is released from the over-discharge state at Vdc and VDO goes "High" from "Low". • Charge over-current detection voltage --- [Circuit 2] Set V1 = 3.0V and V2 = 0V. Charge over-current detection voltage VIc is V2 at which VCO goes "Low" from "High" when V2 is gradually decreased from 0V. • Discharge over-current detection voltage --- [Circuit 2] Set V1 = 3.0V and V2 = 0V. Discharge over-current detection voltage VIdc is V2 at which VDO goes "Low" from "High" when V2 is gradually increased from 0V. • Load short-circuiting detection voltage --- [Circuit 2] Set V1 = 3.0V and V2 = 0V. Load short-circuiting detection voltage Vshort is V2 at which VDO goes "Low" from "High" within a time between the minimum and the maximum value of load short-circuiting detection delay time tshort, when V2 is increased rapidly within 10μs. • 0V battery charge starting charger voltage --- [Circuit 3] Set V1 = V2 = 0V and decrease V2 gradually. 0V battery charge starting charger voltage Vcha is V2 when VCO goes "High" (V1-0.1V or higher). Continued on next page. No.A1641-4/13 LV51142T Continued from preceding page. • Current consumption on operation and shutdown --- [Circuit 4] Set V1 = 3.5V and V2 = 0V on normal condition. IDD shows current consumption on operation Iopr. Set V1 = V2 = 1.8V on over-discharge condition. IDD shows current consumption on shutdown Isdn. • Co : Pch ON resistance, Co : Nch ON resistance --- [Circuit 5] Set V1 = 3.5V, V2 = 0V and V3 = 3.0V. (V1-V3)/|ICo| is Pch ON resistance Rcop. Set V1 = 4.6V, V2 = 0V and V3 = 0.5V. V3/|ICo| is Nch ON resistance Rcon. • Do : Pch ON resistance, Do : Nch ON resistance --- [Circuit 5] Set V1 = 3.5V, V2 = 0V and V4 = 3.0V. (V1-V4)/|IDo| is Pch ON resistance Rdop. Set V1 = V2 = 1.8V and V4 = 0.5V. V4/|IDo| is Nch ON resistance Rdon. • Discharge over-current release resistance --- [Circuit 5] Set V1 = 3.5V, V2 = 0V at first. And then, set V2 = 1.0V. V2/|IVM| is discharge over-current release resistance Rdwn. • Over-charge detection delay time, Release delay time 2 --- [Circuit 6] Set V2 = 0V. Increase V1 from the voltage VC-0.2V to VC+0.2V rapidly within 10μs. Over-charge detection delay time tc is the time needed for VCO to go "Low" just after the change of V1. Next, set V2 = 1V and decrease V1 from VC+0.2V to VC-0.2V rapidly within 10μs. Over-charge release delay time trel 2 is the time needed for VCO to go "High" just after the change of V1. • Over-discharge detection delay time, Release delay time 1 --- [Circuit 6] Set V2 = 0V. Decrease V1 from the voltage Vdc+0.2V to Vdc-0.2V rapidly within 10μs. Over-discharge detection delay time tdc is the time needed for VDO to go "Low" just after the change of V1. Next, set V2 = -1V and increase V1 from Vdc-0.2V to Vdc+0.2V rapidly within 10μs. Release delay time 1 trel1 in case of over-discharge is the time needed for VDO to go "High" just after the change of V1. • Charge over-current detection delay time, Release delay time 1 --- [Circuit 6] Set V1 = 3.0V and V2 = 0V. Decrease V2 from 0V to -1V rapidly within 10μs. Charge over-current delay time tic is the time needed for VCO to go "Low" just after the change of V2. Next, increase V2 from -1V to 0V rapidly within 10μs. Release delay time 1 trel1 in case of charge over-current is the time needed for VCO to go "High" just after the change of V2. • Discharge over-current detection delay time, Release delay time 1 --- [Circuit 6] Set V1 = 3.0V and V2 = 0V. Increase V2 from 0V to 1V rapidly within 10μs. Discharge over-current delay time tidc is the time needed for VDO to go "Low" just after the change of V2. Next, decrease V2 from 1V to 0V rapidly within 10μs. Release delay time 1 trel1 in case of discharge over-current is the time needed for VDO to go "High" just after the change of V2. • Load short-circuiting detection delay time, Release delay time 1 --- [Circuit 6] Set V1 = 3.0V and V2 = 0V. Increase V2 from 0V to 3.0V rapidly within 10μs. Load short-circuiting detection delay time tshort is the time needed for VDO to go "Low" just after the change of V2. Next, decrease V2 from 3.0V to 0V rapidly within 10μs. Release delay time 1 trel1 in case of load short-circuiting is the time needed for VDO to go "High" just after the change of V2. No.A1641-5/13 LV51142T Measurement Circuits • Circuit 1 • Circuit 2 330Ω VDD VDD 0.1μF V1 0.1μF LV51142 LV51140 VSS DO LV51142 LV51140 V1=3.5V VM VSS CO DO VM CO V2 VDO V V2 VCO V VDO • Circuit 3 V VCO V • Circuit 4 IDD VDD A 0.1μF V1 0.1μF LV51142 LV51140 VM VSS DO VDD V1 LV51142 LV51140 CO DO V2 CO V2 10MΩ VCO V • Circuit 5 • Circuit 6 VDD VDD 0.1μF V1 VM VSS LV51142 LV51140 VSS DO VM V1 DO CO A IDO V4 A A LV51142 LV51140 VSS CO V2 IVM VDO TM ICO V3 VM V2 TM VCO TM = Time Measurement No.A1641-6/13 LV51142T Application Circuit Example R1 VDD C1 LLV51142 V51140T Battery VSS Do Co VM R2 C2 External Components Items Resistor 1 Capacitor 1 Resistor 2 Symbol Recommended value R1 330Ω C1, 2 0.1μF R2 3.9kΩ • The supply voltage (VDD) to this IC is stabilized by R1 and C1. Moreover, R1 and R2 act as the current restriction resistances at the time of reverse-connecting a charger, or at the time of connecting a charger which outputs the voltage exceeding the absolute maximum rating of this IC. Be sure to connect these components. • If the value of R1 is too large, the over-charge detection voltage will become high due to the current consumption of this IC. 330Ω is recommended. • If the value of C1 is too small, this IC may be in a shutdown state at the time of the discharge over-current or the load short-circuiting. 0.1μF is recommended. • Use the value within the limits shown in the table about the value of R2. In order to reduce the current at the time of reverse-connecting a charger, we recommend to choose R1 and R2 so that the sum total of resistance values is more than 4kΩ. The recommended value of R2 is 3.9kΩ. Note 1 : The connection diagram and each value of external components shown above are just recommendation. Including a battery and FETs, determine the circuit after sufficient evaluation about your actual application. These numbers don't mean to guarantee the characteristic of the IC Note 2 : The IC is susceptible to static electricity and some pins are easily damaged by it. Handle the IC carefully. No.A1641-7/13 LV51142T Description of Operation • Normal condition This IC monitors the battery voltage (VDD) and the voltage of VM terminal, and controls charge and discharge. If the battery voltage (VDD) is in the range from the over-discharge detection voltage (Vdc) to the over-charge detection voltage (VC) and the VM terminal voltage is in the range from the charge over-current detection voltage (VIc) to the discharge over-current detection voltage (VIdc), this IC turns on both the charge and discharge control FETs. This state is called the normal condition, and charge and discharge are possible together. • Discharge over-current detection, Load short-circuiting detection When the discharge current becomes equal to or higher than the specified value under the normal condition, and if the VM terminal voltage is in the range from the discharge over current detection voltage (VIdc) to the short-circuiting detection voltage (Vshort) and that state is maintained during more than the discharge over-current detection delay time (tidc), this IC turns off the discharge control FET to stop discharge. This state is called the discharge over-current condition. At that time, if the VM terminal voltage is equal to or higher than Vshort and that state is maintained during more than the load short-circuiting detection delay time (tshort), this IC turns off the discharge control FET to stop discharge. This state is called the load short-circuiting detection condition. While load is connected, in both conditions, the VM terminal voltage equals to VDD potential due to the load, but it falls by the discharge over-current release resistance (Rdwn) when the load is removed and the resistance between (+) and (-) terminals of battery pack (refer to “Application Circuit Example”) becomes larger than the value which enables the automatic return. Then the VM terminal voltage becomes less than VIdc, and if that state is maintained during more than the release delay time 1 (trel1), this IC returns to normal condition. Note : The resistance value between (+) and (-) terminals of battery pack for automatic return changes with battery voltage (VDD) or VIdc. The standard is expressed with the following equation. Resistance value for automatic return = Rdwn × (VDD / VIdc - 1) • Charge over-current detection When the charge current becomes equal to or higher than the specified value under the normal condition, if the VM terminal voltage becomes less than the charge over-current detection voltage (VIc) and that state is maintained during more than the charge over-current detection delay time (tic), this IC turns off the charge control FET to stop charge. This state is called the charge over-current detection condition. Then the VM terminal voltage becomes equals to or higher than VIc and that state is maintained during more than the release delay time 1 (trel1) when the charger is removed and the load is connected, this IC returns to the normal condition. • Over-charge detection When the battery voltage (VDD) under the normal condition becomes equal to or higher than the over-charge detection voltage (VC) and that state is maintained during more than the over-charge detection delay time (tc), this IC turns off the charge control FET and stops charge. This state is called the over-charge detection condition. Release from the over-charge detection condition includes following three cases. (1) When VDD falls to Vc-VHc without load and that state is maintained during more than the delay time 2 (trel2), this IC turns on the charge control FET and returns to the normal condition. * VHc : Over-charge hysteresis voltage (2) When the load is installed and discharge starts, the discharge current flows through the internal parasitic diode of the charge control FET. Then the VM terminal voltage rises to only the Vf voltage of the internal parasitic diode from VSS potential. At this time, if the VM terminal voltage is higher than the discharge over-current detection voltage (VIdc) and VDD is equal to or less than VC, this IC returns to the normal condition when this state continues more than the delay time 2 (trel2). (3) In case (2), if the VM terminal voltage is higher than the discharge over-current detection voltage (VIdc) and VDD is equal to or higher than VC, battery is discharged until VDD becomes less than VC, and then this IC returns to the normal condition when this state continues more than the delay time 2 (trel2). No.A1641-8/13 LV51142T • Over-discharge detection When the battery voltage (VDD) under the normal condition becomes equal to or less than the over-discharge detection voltage (Vdc) and that state continues for more than the over-discharge detection time (tdc), this IC turns off the discharge control FET and stops discharging. This state is called the over-discharge detection condition. Recovery from the over-discharge detection condition is achieved only by connecting the charger. • Return from over-discharge When the charger is connected and charging starts, the charge current flows through the internal parasitic diode of the discharge control FET. When VDD becomes higher than Vdc and that state continues for more than the delay time 1(trel1), this IC is released from the over-discharge detection condition automatically and returns to the normal condition. If VDD is less than Vdc, this IC returns to the normal condition when VDD becomes equal to or higher than Vdc, and this state continues more than delay time 1 (trel1). This IC stops all internal circuits (Shutdown condition) after detecting the over-discharge and reduces current consumption. (Max 0.1μA, at VDD = 1.8V) • Charge to 0V battery 0V battery charge function If the voltage of charger (the voltage between VDD and VM) is larger than the 0V battery charge starting charger voltage (Vcha), 0V battery charge becomes possible when CO terminal outputs VDD terminal potential and turns on the charge control FET. No.A1641-9/13 LV51142T Timing Chart • Discharge over-current detection, Load short-circuiting detection, Charge over-current detection Load connected Load connected Charger connected Load connected VC VDD Vdc VDD Vshort VM Vldc VSS Vlc VDD DO VSS VDD CO VSS VM tidc tshort trel1 VC Vdc VIc VIdc Vshort : Over-charge detection voltage : Over-discharge detection voltage : Charge over-current detection voltage : Discharge over-current detection voltage : Load short-circuiting detection voltage tic trel1 tic tidc tshort trel1 trel1 : Charge over-current detection delay time : Discharge over-current detection delay time : Load short-circuiting detection delay time : Release delay time 1 No.A1641-10/13 LV51142T • Over-charge detection Load connected Charger connected Charger connected Load connected Charger connected VC VDD VC-VHc Vdc VM Vldc VSS VDD DO VSS VDD CO VSS VM tc tc trel2 VC Vdc VHc Vidc : Over-charge detection voltage : Over-discharge detection voltage : Over-charge hysteresis voltage : Discharge over-current detection voltage tc trel2 trel2 tc : Over-charge detection delay time trel2 : Release delay time 2 No.A1641-11/13 LV51142T • Over-discharge detection VRdc VC : Over-charge detection voltage Vdc : Over-discharge detection voltage VRdc : Over-discharge return voltage Vic : Charge over-current detection voltage Vidc : Discharge over-current detection voltage tdc : Over-discharge detection delay time trel1 : Release delay time 1 No.A1641-12/13 LV51142T SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2009. Specifications and information herein are subject to change without notice. PS No.A1641-13/13