TIG066SS Ordering number : ENA1794 SANYO Semiconductors DATA SHEET TIG066SS N-Channel IGBT Light-Controlling Flash Applications Features • • • Low-saturation voltage Enhansment type High speed switching • • 4.0V drive Built-in Gate-to-Emitter protection diode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Collector-to-Emitter Voltage (DC) VCES Collector-to-Emitter Voltage (Pulse) PW≤1ms Gate-to-Emitter Voltage (DC) VCESP VGES Gate-to-Emitter Voltage (Pulse) VGESP PW≤1ms Collector Current (Pulse) ICP CM=600μF VCE≤320V, starting Tch=25°C Ratings Unit 400 V 450 V ±6 V ±8 V 150 A Maximum Collector-to-Emitter dv / dt dv / dt 1500 V / μs Channel Temperature Tch 150 °C Storage Temperature Tstg -40 to +150 °C Product & Package Information Package Dimensions • Package : SOP8 • JEITA, JEDEC : SC-87, SOT96 • Minimum Packing Quantity : 1000 pcs./reel unit : mm (typ) 7005A-008 8 Packing Type: TL 0.2 0.3 0.8 5.0 5 TIG 066 1.5 1.8 MAX 4.4 0.7 0.8 6.0 0.1 1 4 1.27 0.43 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector Marking TL LOT No. Electrical Connection 5 to 8 SANYO : SOP8 4 1 to 3 http://semicon.sanyo.com/en/network 90810PJ TK IM TC-00002414 No. A1794-1/6 TIG066SS Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage Ratings Conditions min typ V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V VCE=10V, IC=1mA Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) IC=150A, VGE=4V 3.8 Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Unit max 400 V VGE=±6V, VCE=0V 0.4 10 μA ±10 μA 1.0 V 5 V Input Capacitance Cies VCE=10V, f=1MHz 5100 pF Output Capacitance Coes 59 pF Reverse Transfer Capacitance Cres VCE=10V, f=1MHz VCE=10V, f=1MHz 43 pF Fall Time tf IC=150A, VCC=320V, Resistor load VGE=4V, RG=36Ω 270 ns Fig1 Large Current R Load Switching Circuit RL CM + VCC RG TIG066SS 4V 0V 100kΩ Note1. Gate Series Resistance RG ≥ 36Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt ≤ 1500V / μs is satisfied at customer’s actual set evaluation, RG < 36Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 1500V / μs to protect the device when it is turned off. No. A1794-2/6 TIG066SS Tc = Collector Current, IC -- A 125 100 75 50 25 0 1 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V 75 50 8 7 6 5 IC=150A 130A 3 100A 2 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Tc=25°C 9 8 7 6 5 IC=150A 4 130A 3 100A 2 1 1.0 5.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V 5.0 IT15737 VCE(sat) -- Tc 6 Tc= 75°C 5.0 IT15735 VCE -- VGE IT15736 VCE -- VGE 10 0.5 10 Tc= --25°C 4 0 Gate-to-Emitter Voltage, VGE -- V VGE=4V 9 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V 100 0 10 9 1 1.0 Collector-to-Emitter Voltage, VCE -- V °C 25 °C 75 125 IT15734 VCE -- VGE 10 8 7 6 5 IC=150A 130A 4 3 100A 5 0A I C=15 130A 4 100A 3 2 2 1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V VCE=10V IC=1mA 0.8 --25 0 25 50 100 75 125 Case Temperature, Tc -- °C IT15738 VGE(off) -- Tc 0.9 1 --50 5.0 150 IT15739 Cies, Coes, Cres -- VCE 10000 7 5 f=1MHz Cies 3 0.7 Cies, Coes, Cres -- pF Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 150 25 Collector-to-Emitter Voltage, VCE -- V 0 --2 3. 0V 4.0 V .0 V 150 VCE=5V 175 2.5V VG E=5 Collector Current, IC -- A 175 IC -- VGE 200 Tc=25°C 5° C IC -- VCE 200 0.6 0.5 0.4 0.3 0.2 2 1000 7 5 3 2 100 7 5 Coes Cres 3 0.1 0 --50 2 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT15540 10 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE -- V 18 20 IT15741 No. A1794-3/6 TIG066SS SW Time -- ICP Switching test circuit Fig.1 VGE=4V VCC=320V td (off) RG=36Ω Switching Time, SW Time -- ns 2 1000 7 5 tf 3 2 tr 100 7 td(on) 5 3 3 5 7 2 100 7 tf 5 3 tr 2 ) t d(on 100 7 5 dv / dt -- RG 3000 2000 1500 1000 500 0 0 10 20 30 40 50 60 70 80 Gate Series Resistance, RG -- Ω CM -- ICP 800 90 200 100 100 120 IT15924 Tc≤70°C CM=600μF 140 120 100 80 60 40 20 1 2 3 4 5 6 7 8 Gate-to-Emitter Voltage, VGE -- V dv / dt -- Turn OFF IC 2000 9 IT15746 Tc≤70°C VCE=320V 1750 dv / dt, dv / dt -- V / μs 300 80 160 IT15745 400 60 ICP -- VGE 0 0 100 Tc=70°C 500 40 180 Tc=25°C 600 20 Gate Series Resistance, RG -- Ω VGE=4V VCE=320V 700 0 IT15923 Switching test circuit Fig.1 VGE=4V VCC=320V ICP=150A 2500 2 3 Collector Current (Pulse), ICP -- A 2 Collector Current (Pulse), ICP -- A Turn OFF dv / dt -- V / μs 1000 3 10 10 Maximum Capacitor, CM -- μF Switching test circuit Fig.1 VGE=4V VCC=320V f) t d(of ICP=150A 2 2 0 SW Time -- RG 3 Switching Time, SW Time -- ns 3 1500 1250 1000 750 500 250 0 20 40 60 80 100 120 140 Collector Current (Pulse), ICP -- A 160 180 IT15747 0 0 20 40 60 80 100 120 140 Turn OFF Collector Current, Turn OFF IC -- A 160 180 IT15748 No. A1794-4/6 TIG066SS Definition of dv/dt dv/dt is defined as the maximum slope of the below VCE curve during turn-off period. dv/dt=ΔVCE/Δt=ΔVCE/100ns Overall waveform Enlarged picture of turn-off period Turn-off period V,I VCE Turn off VCE Δt=100ns IC ICP ΔVCE Turn off IC IC t VCE IT15323 Definition of Switching Time VGE VGE:90% VGE:10% t VCE VCE:90% VCE:10% VCE:10% t IC td(on) tr td(off) IC:90% IC:10% t tf IT15324 No. A1794-5/6 TIG066SS Note : TIG066SS has protection diode between gate and emitter but handling it requires sufficient care to be taken. 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