SANYO TIG066SS

TIG066SS
Ordering number : ENA1794
SANYO Semiconductors
DATA SHEET
TIG066SS
N-Channel IGBT
Light-Controlling Flash Applications
Features
•
•
•
Low-saturation voltage
Enhansment type
High speed switching
•
•
4.0V drive
Built-in Gate-to-Emitter protection diode
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Emitter Voltage (DC)
VCES
Collector-to-Emitter Voltage (Pulse)
PW≤1ms
Gate-to-Emitter Voltage (DC)
VCESP
VGES
Gate-to-Emitter Voltage (Pulse)
VGESP
PW≤1ms
Collector Current (Pulse)
ICP
CM=600μF
VCE≤320V, starting Tch=25°C
Ratings
Unit
400
V
450
V
±6
V
±8
V
150
A
Maximum Collector-to-Emitter dv / dt
dv / dt
1500
V / μs
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-40 to +150
°C
Product & Package Information
Package Dimensions
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1000 pcs./reel
unit : mm (typ)
7005A-008
8
Packing Type: TL
0.2
0.3
0.8
5.0
5
TIG
066
1.5
1.8 MAX
4.4
0.7
0.8
6.0
0.1
1
4
1.27
0.43
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
Marking
TL
LOT No.
Electrical Connection
5 to 8
SANYO : SOP8
4
1 to 3
http://semicon.sanyo.com/en/network
90810PJ TK IM TC-00002414 No. A1794-1/6
TIG066SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector-to-Emitter Breakdown Voltage
Ratings
Conditions
min
typ
V(BR)CES
ICES
IGES
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VCE=10V, IC=1mA
Collector-to-Emitter Saturation Voltage
VGE(off)
VCE(sat)
IC=150A, VGE=4V
3.8
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Unit
max
400
V
VGE=±6V, VCE=0V
0.4
10
μA
±10
μA
1.0
V
5
V
Input Capacitance
Cies
VCE=10V, f=1MHz
5100
pF
Output Capacitance
Coes
59
pF
Reverse Transfer Capacitance
Cres
VCE=10V, f=1MHz
VCE=10V, f=1MHz
43
pF
Fall Time
tf
IC=150A, VCC=320V, Resistor load VGE=4V, RG=36Ω
270
ns
Fig1 Large Current R Load Switching Circuit
RL
CM
+
VCC
RG
TIG066SS
4V
0V
100kΩ
Note1. Gate Series Resistance RG ≥ 36Ω is recommended for protection purpose at the time of turn OFF. However,
if dv / dt ≤ 1500V / μs is satisfied at customer’s actual set evaluation, RG < 36Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 1500V / μs to protect the device when it is turned off.
No. A1794-2/6
TIG066SS
Tc
=
Collector Current, IC -- A
125
100
75
50
25
0
1
2
3
4
5
6
7
8
9
Collector-to-Emitter Voltage, VCE -- V
75
50
8
7
6
5
IC=150A
130A
3
100A
2
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Emitter Voltage, VGE -- V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Tc=25°C
9
8
7
6
5
IC=150A
4
130A
3
100A
2
1
1.0
5.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Emitter Voltage, VGE -- V
5.0
IT15737
VCE(sat) -- Tc
6
Tc= 75°C
5.0
IT15735
VCE -- VGE
IT15736
VCE -- VGE
10
0.5
10
Tc= --25°C
4
0
Gate-to-Emitter Voltage, VGE -- V
VGE=4V
9
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
100
0
10
9
1
1.0
Collector-to-Emitter Voltage, VCE -- V
°C
25
°C
75
125
IT15734
VCE -- VGE
10
8
7
6
5
IC=150A
130A
4
3
100A
5
0A
I C=15
130A
4
100A
3
2
2
1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Emitter Voltage, VGE -- V
VCE=10V
IC=1mA
0.8
--25
0
25
50
100
75
125
Case Temperature, Tc -- °C
IT15738
VGE(off) -- Tc
0.9
1
--50
5.0
150
IT15739
Cies, Coes, Cres -- VCE
10000
7
5
f=1MHz
Cies
3
0.7
Cies, Coes, Cres -- pF
Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
150
25
Collector-to-Emitter Voltage, VCE -- V
0
--2
3.
0V
4.0
V
.0 V
150
VCE=5V
175
2.5V
VG
E=5
Collector Current, IC -- A
175
IC -- VGE
200
Tc=25°C
5°
C
IC -- VCE
200
0.6
0.5
0.4
0.3
0.2
2
1000
7
5
3
2
100
7
5
Coes
Cres
3
0.1
0
--50
2
--25
0
25
50
75
100
Case Temperature, Tc -- °C
125
150
IT15540
10
0
2
4
6
8
10
12
14
16
Collector-to-Emitter Voltage, VCE -- V
18
20
IT15741
No. A1794-3/6
TIG066SS
SW Time -- ICP
Switching test circuit Fig.1
VGE=4V
VCC=320V
td (off)
RG=36Ω
Switching Time, SW Time -- ns
2
1000
7
5
tf
3
2
tr
100
7
td(on)
5
3
3
5
7
2
100
7
tf
5
3
tr
2
)
t d(on
100
7
5
dv / dt -- RG
3000
2000
1500
1000
500
0
0
10
20
30
40
50
60
70
80
Gate Series Resistance, RG -- Ω
CM -- ICP
800
90
200
100
100
120
IT15924
Tc≤70°C
CM=600μF
140
120
100
80
60
40
20
1
2
3
4
5
6
7
8
Gate-to-Emitter Voltage, VGE -- V
dv / dt -- Turn OFF IC
2000
9
IT15746
Tc≤70°C
VCE=320V
1750
dv / dt, dv / dt -- V / μs
300
80
160
IT15745
400
60
ICP -- VGE
0
0
100
Tc=70°C
500
40
180
Tc=25°C
600
20
Gate Series Resistance, RG -- Ω
VGE=4V
VCE=320V
700
0
IT15923
Switching test circuit Fig.1
VGE=4V
VCC=320V
ICP=150A
2500
2
3
Collector Current (Pulse), ICP -- A
2
Collector Current (Pulse), ICP -- A
Turn OFF dv / dt -- V / μs
1000
3
10
10
Maximum Capacitor, CM -- μF
Switching test circuit Fig.1
VGE=4V
VCC=320V
f)
t d(of
ICP=150A
2
2
0
SW Time -- RG
3
Switching Time, SW Time -- ns
3
1500
1250
1000
750
500
250
0
20
40
60
80
100
120
140
Collector Current (Pulse), ICP -- A
160
180
IT15747
0
0
20
40
60
80
100
120
140
Turn OFF Collector Current, Turn OFF IC -- A
160
180
IT15748
No. A1794-4/6
TIG066SS
Definition of dv/dt
dv/dt is defined as the maximum slope of the below VCE curve during turn-off period.
dv/dt=ΔVCE/Δt=ΔVCE/100ns
Overall waveform
Enlarged picture of turn-off period
Turn-off period
V,I
VCE
Turn off VCE
Δt=100ns
IC
ICP
ΔVCE
Turn off IC
IC
t
VCE
IT15323
Definition of Switching Time
VGE
VGE:90%
VGE:10%
t
VCE
VCE:90%
VCE:10%
VCE:10%
t
IC
td(on)
tr
td(off)
IC:90%
IC:10%
t
tf
IT15324
No. A1794-5/6
TIG066SS
Note : TIG066SS has protection diode between gate and emitter but handling it requires sufficient care
to be taken.
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This catalog provides information as of September, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1794-6/6