SANYO TIG030TS

TIG030TS
Ordering number : ENA0637A
SANYO Semiconductors
DATA SHEET
TIG030TS
N-Channel IGBT
Light-Controlling Flash Applications
Features
•
•
•
•
•
•
Low-saturation voltage.
4V drive.
Enhansment type.
Built-in gate-to-emitter protection diode.
Mounting height 1.1mm, mounting area 19.2mm2.
dv / dt guarantee.*
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Emitter Voltage
VCES
400
Gate-to-Emitter Voltage (DC)
VGES
±6
V
Gate-to-Emitter Voltage (Pulse)
VGES
±8
V
Collector Current (Pulse)
Channel Temperature
ICP
dVCE / dt
Tch
Storage Temperature
Tstg
Maximum Collector-to-Emitter dv / dt
PW≤1ms
V
PW≤500µs, duty cycle≤0.5%, CM=400µF
150
A
VCE≤320V, starting Tch=25°C
400
V / µs
150
°C
--40 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Marking : G030
Symbol
V(BR)CES
ICES
IGES
Conditions
IC=2mA, VGE=0V
VCE=320V, VGE=0V
Ratings
min
typ
max
400
Unit
V
VGE=±6V, VCE=0V
10
µA
±10
µA
Continued on next page.
* : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/µs.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53007 TI IM / 11007PJ TI IM TC-00000459 No. A0637-1/4
TIG030TS
Continued from preceding page.
Parameter
Symbol
Gate-to-Emitter Threshold Voltage
VGE(off)
VCE(sat)
Collector-to-Emitter Saturation Voltage
Ratings
Conditions
min
VCE=10V, IC=1mA
typ
Unit
max
0.5
1.2
V
V
Input Capacitance
Cies
2610
pF
Output Capacitance
Coes
VCE=10V, f=1MHz
59
pF
Reverse Transfer Capacitance
Cres
VCE=10V, f=1MHz
36
pF
Package Dimensions
3.7
5.4
IC=150A, VGE=4V
VCE=10V, f=1MHz
Electrical Connection
0.95
unit : mm (typ)
7006A-007
3.0
8
0.125
5
1
4
6
5
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
1.0
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
0.05
6.4
4.5
0.5
8
7
SANYO : TSSOP8
0.95
0.25
0.425
0.65
1
2
3
4
Top view
Large Current R Load Screening Circuit
RL=2.0Ω
+
CM=400µF
VCC=320V
RG≥50Ω
TIG030TS
4V
0V
100kΩ
Note1. Gate Series Resistance RG≥50Ω is recommended for prolection purpose at the time of turn OFF. However,
if dv/dt≤400V/µs is satisfied at customer’s actual set evaluation, RG<50Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / µs to protect the device when it is turned off.
No. A0637-2/4
TIG030TS
IC -- VCE
200
5V
=4.
V GE
4.0V
3.0V
160
140
120
2.5V
100
80
60
140
120
100
80
60
40
20
20
0
0
1.0
0.5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Collector-to-Emitter Voltage, VCE -- V
5.0
0
1.0
0.5
1.5
Collector-to-Emitter Voltage, VCE -- V
5.0
4.5
4.0
3.5
IC =150A
3.0
130A
2.5
100A
2.0
1.5
2.5
3.0
3.5
1.0
4.0
IT11956
VCE -- VGE
6.0
Tc= --25°C
5.5
2.0
Gate-to-Emitter Voltage, VGE -- V
IT11955
VCE -- VGE
6.0
Collector-to-Emitter Voltage, VCE -- V
160
40
0
Tc=25°C
5.5
5.0
4.5
4.0
IC =150A
3.5
130A
3.0
100A
2.5
2.0
1.5
1.0
0
1
2
3
4
5
Gate-to-Emitter Voltage, VGE -- V
0
6
1
2
3
4
5
6
Gate-to-Emitter Voltage, VGE -- V
IT11957
VCE -- VGE
6.0
IT11958
VCE(sat) -- Tc
6
Tc=75°C
VGE=4V
5.5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
Tc=25°C
VCE=5V
180
Collector Current, IC -- A
Collector Current, IC -- A
180
5.0
4.5
IC =1
50A
4.0
130A
3.5
3.0
100A
2.5
2.0
5
4
150A
I C=
130A
3
100A
2
1
1.5
1.0
0
1
2
3
4
VCE=10V
IC=1mA
0.9
--25
0
25
Cies, Coes, Cres -- pF
0.7
0.6
0.5
0.4
125
150
IT11960
f=1MHz
Cies
2
1000
7
5
3
2
100
7
5
Coes
Cres
3
0.3
0.2
--50
100
75
Cies, Coes, Cres -- VCE
10000
7
5
3
0.8
50
Case Temperature, Tc -- °C
IT11959
VGE(off) -- Tc
1.0
0
--50
6
5
Gate-to-Emitter Voltage, VGE -- V
Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
IC -- VGE
200
Tc=25°C
2
10
--25
0
25
50
75
100
Case Temperature, Tc -- °C
125
150
IT11961
0
2
4
6
8
10
12
14
16
Collector-to-Emitter Voltage, VCE -- V
18
20
IT11962
No. A0637-3/4
TIG030TS
SW Time -- IC
Switching Time, SW Time -- ns
3
tf
td (off
)
2
7
5
tr
2
td(on)
100
Tc=25°C
Xe -Tube Load
VCC=330V, ICP=120A,
VGE=4V, PW=50µs
Driver :
SANYO TND721MH5
500
1000
3
Turn OFF dv / dt -- RG
600
RL=2.2Ω, Tc=25°C
VGE=4V, RG=82Ω
PW=50µs
Turn OFF, dv / dt -- V / µs
5
400
300
200
100
7
5
10
2
3
5
7
2
100
Collector Current, IC -- A
Tc=70°C
100
80
60
40
20
3
120
IT11964
300
250
200
150
VCM=330V
Tc≤70°C
VGE=4V
RG≥50Ω
100
0
2
100
350
50
1
80
400
120
0
0
60
CM -- ICP
450
Tc=25°C
140
40
Gate Series Resistance, RG -- Ω
ICP -- VGE
CM=400µF
20
IT11963
Maximum Capacitor, CM -- µF
Collector Current (Pulse), ICP -- A
160
0
0
3
4
5
6
Gate-to-Emitter Voltage, VGE -- V
7
8
IT09937
0
20
40
60
80
100
120
140
Collector Current (Pulse), ICP -- A
160
IT11965
Note : TIG030TS has protection diode between gate and emitter but handling it requires sufficient care to
be taken.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0637-4/4