TIG030TS Ordering number : ENA0637A SANYO Semiconductors DATA SHEET TIG030TS N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • Low-saturation voltage. 4V drive. Enhansment type. Built-in gate-to-emitter protection diode. Mounting height 1.1mm, mounting area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 Gate-to-Emitter Voltage (DC) VGES ±6 V Gate-to-Emitter Voltage (Pulse) VGES ±8 V Collector Current (Pulse) Channel Temperature ICP dVCE / dt Tch Storage Temperature Tstg Maximum Collector-to-Emitter dv / dt PW≤1ms V PW≤500µs, duty cycle≤0.5%, CM=400µF 150 A VCE≤320V, starting Tch=25°C 400 V / µs 150 °C --40 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Marking : G030 Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V Ratings min typ max 400 Unit V VGE=±6V, VCE=0V 10 µA ±10 µA Continued on next page. * : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/µs. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53007 TI IM / 11007PJ TI IM TC-00000459 No. A0637-1/4 TIG030TS Continued from preceding page. Parameter Symbol Gate-to-Emitter Threshold Voltage VGE(off) VCE(sat) Collector-to-Emitter Saturation Voltage Ratings Conditions min VCE=10V, IC=1mA typ Unit max 0.5 1.2 V V Input Capacitance Cies 2610 pF Output Capacitance Coes VCE=10V, f=1MHz 59 pF Reverse Transfer Capacitance Cres VCE=10V, f=1MHz 36 pF Package Dimensions 3.7 5.4 IC=150A, VGE=4V VCE=10V, f=1MHz Electrical Connection 0.95 unit : mm (typ) 7006A-007 3.0 8 0.125 5 1 4 6 5 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate 1.0 1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate 0.05 6.4 4.5 0.5 8 7 SANYO : TSSOP8 0.95 0.25 0.425 0.65 1 2 3 4 Top view Large Current R Load Screening Circuit RL=2.0Ω + CM=400µF VCC=320V RG≥50Ω TIG030TS 4V 0V 100kΩ Note1. Gate Series Resistance RG≥50Ω is recommended for prolection purpose at the time of turn OFF. However, if dv/dt≤400V/µs is satisfied at customer’s actual set evaluation, RG<50Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / µs to protect the device when it is turned off. No. A0637-2/4 TIG030TS IC -- VCE 200 5V =4. V GE 4.0V 3.0V 160 140 120 2.5V 100 80 60 140 120 100 80 60 40 20 20 0 0 1.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-to-Emitter Voltage, VCE -- V 5.0 0 1.0 0.5 1.5 Collector-to-Emitter Voltage, VCE -- V 5.0 4.5 4.0 3.5 IC =150A 3.0 130A 2.5 100A 2.0 1.5 2.5 3.0 3.5 1.0 4.0 IT11956 VCE -- VGE 6.0 Tc= --25°C 5.5 2.0 Gate-to-Emitter Voltage, VGE -- V IT11955 VCE -- VGE 6.0 Collector-to-Emitter Voltage, VCE -- V 160 40 0 Tc=25°C 5.5 5.0 4.5 4.0 IC =150A 3.5 130A 3.0 100A 2.5 2.0 1.5 1.0 0 1 2 3 4 5 Gate-to-Emitter Voltage, VGE -- V 0 6 1 2 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V IT11957 VCE -- VGE 6.0 IT11958 VCE(sat) -- Tc 6 Tc=75°C VGE=4V 5.5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V Tc=25°C VCE=5V 180 Collector Current, IC -- A Collector Current, IC -- A 180 5.0 4.5 IC =1 50A 4.0 130A 3.5 3.0 100A 2.5 2.0 5 4 150A I C= 130A 3 100A 2 1 1.5 1.0 0 1 2 3 4 VCE=10V IC=1mA 0.9 --25 0 25 Cies, Coes, Cres -- pF 0.7 0.6 0.5 0.4 125 150 IT11960 f=1MHz Cies 2 1000 7 5 3 2 100 7 5 Coes Cres 3 0.3 0.2 --50 100 75 Cies, Coes, Cres -- VCE 10000 7 5 3 0.8 50 Case Temperature, Tc -- °C IT11959 VGE(off) -- Tc 1.0 0 --50 6 5 Gate-to-Emitter Voltage, VGE -- V Gate-to-Emitter Cutoff Voltage, VGE(off) -- V IC -- VGE 200 Tc=25°C 2 10 --25 0 25 50 75 100 Case Temperature, Tc -- °C 125 150 IT11961 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE -- V 18 20 IT11962 No. A0637-3/4 TIG030TS SW Time -- IC Switching Time, SW Time -- ns 3 tf td (off ) 2 7 5 tr 2 td(on) 100 Tc=25°C Xe -Tube Load VCC=330V, ICP=120A, VGE=4V, PW=50µs Driver : SANYO TND721MH5 500 1000 3 Turn OFF dv / dt -- RG 600 RL=2.2Ω, Tc=25°C VGE=4V, RG=82Ω PW=50µs Turn OFF, dv / dt -- V / µs 5 400 300 200 100 7 5 10 2 3 5 7 2 100 Collector Current, IC -- A Tc=70°C 100 80 60 40 20 3 120 IT11964 300 250 200 150 VCM=330V Tc≤70°C VGE=4V RG≥50Ω 100 0 2 100 350 50 1 80 400 120 0 0 60 CM -- ICP 450 Tc=25°C 140 40 Gate Series Resistance, RG -- Ω ICP -- VGE CM=400µF 20 IT11963 Maximum Capacitor, CM -- µF Collector Current (Pulse), ICP -- A 160 0 0 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V 7 8 IT09937 0 20 40 60 80 100 120 140 Collector Current (Pulse), ICP -- A 160 IT11965 Note : TIG030TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No. A0637-4/4