SFT1202 Ordering number : ENA1169 SANYO Semiconductors DATA SHEET SFT1202 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Symbol Conditions Ratings 180 V 180 V VCEO VEBO 150 V IC Collector Current (Pulse) Unit VCBO VCES ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 7 V 2 A 3 Tc=25°C A 400 mA 1 W 15 W 150 °C --55 to +150 °C Marking : T1202 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73008EA TI IM TC-00001478 No. A1169-1/4 SFT1202 Electrical Characteristics at Ta=25°C Symbol Collector Cutoff Current Emitter Cutoff Current ICBO IEBO VCB=80V, IE=0A VEB=4V, IC=0A DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=5V, IC=100mA VCE=10V, IC=300mA Output Capacitance VCE(sat)1 Collector-to-Emitter Saturation Voltage VCE(sat)2 V(BR)CES V(BR)CEO IC=100μA, RBE=0Ω IC=1mA, RBE=∞ Turn-ON Time V(BR)EBO ton IE=10μA, IC=0A See specified Test Circuit. Storage Time tstg tf Fall Time V 180 V 150 V V 2.3 0.5 1.5 6.5 5.0 5.5 7.0 1.5 V 180 ns 7.0 5.5 mV 1.2 ns 4 0.5 2.5 0.8 1.2 7.5 0.8 1.6 2.3 100 70 0.5 1 2 3 0 to 0.2 0.6 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 65 0.85 1460 2.3 2 mV See specified Test Circuit. 0.85 1 165 See specified Test Circuit. Package Dimensions 0.6 pF 110 ns unit : mm (typ) 7003-003 0.85 0.7 MHz 50 unit : mm (typ) 7518-003 4 μA μA 7 Package Dimensions 6.5 5.0 1 1 12 Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Unit max 560 VCB=10V, f=1MHz IC=1A, IB=100mA V(BR)CBO Collector-to-Emitter Breakdown Voltage typ 140 Collector-to-Base Breakdown Voltage VBE(sat) min 200 IC=0.5A, IB=50mA IC=1A, IB=100mA IC=10μA, IE=0A Base-to-Emitter Saturation Voltage Ratings Conditions 1.2 Parameter 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 SANYO : TP Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=75V IC=10IB1= --10IB2=0.5A No. A1169-2/4 SFT1202 IC -- VCE 16 0m 200 250 mA Collector Current, IC -- A 40mA 1.0 20mA 10mA 5mA 0.5 IB=0mA 0 0 0.1 0.2 0.3 0.4 0mA 12 10mA 5mA 2mA 1mA 0.5 IB=0mA 0 DC Current Gain, hFE 25°C --25°C °C Ta=7 5 Collector Current, IC -- A 1.0 VCE=5V 3 2 Ta=75°C 25°C --25°C 100 7 5 2 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 10 0.01 1.2 2 3 5 7 0.1 2 3 5 7 1.0 f=1MHz 5 Output Capacitance, Cob -- pF Gain-Bandwidth Product, fT -- MHz 5 Cob -- VCB 7 2 100 7 5 3 2 10 0.01 2 3 5 7 2 0.1 3 5 Collector Current, IC -- A 3 2 10 7 5 3 0.1 7 1.0 IT13546 2 3 5 7 1.0 2 3 5 7 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 0.1 7 5 2 2 3 5 °C 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 5 7 100 IT13547 IC / IB=10 3 25 °C 5 7 = a T --25°C 3 VBE(sat) -- IC 2 IC / IB=10 3 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 IT13545 VCE=10V 0.01 0.01 2 Collector Current, IC -- A IT13544 fT -- IC 3 5 IT13543 3 0 0.6 4 7 1.5 0.4 3 hFE -- IC 1000 5 0.2 2 Collector-to-Emitter Voltage, VCE -- V 2.0 0 1 IT13542 VCE=5V 0.5 20mA mA 200 1.0 0 IC -- VBE 2.5 60mA 40mA 1.5 0.5 Collector-to-Emitter Voltage, VCE -- V 80mA 100mA 60mA mA 1.5 IC -- VCE 2.0 A 120m 100mA 80mA 500 Collector Current, IC -- A mA A 2.0 3 IT13548 1.0 Ta= --25°C 7 5 25°C 75°C 3 2 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT13549 No. A1169-3/4 SFT1202 ASO 3 0 10 2 ms 3 μs μs 500 100 s 0m n s1 tio era 0.1 7 5 1.0 7 5 op n tio 2 IC=2A DC s era 3 <10μs 1m 0m op 1.0 7 5 ICP=3A 3 2.5 2 μs μs 500 100 10 IC=2A DC Collector Current, IC -- A <10μs s 1m s m 10 3 2.5 2 ASO 5 ICP=3A Collector Current, IC -- A 5 0.1 7 5 3 2 2 Ta=25°C Single pulse 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Tc=25°C Single pulse 0.01 0.01 2 3 5 7 0.1 2 3 5 7100 2 3 IT13555 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 1.2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 IT13556 Collector-to-Emitter Voltage, VCE -- V PC -- Tc 16 15 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 14 1.0 0.8 0.6 0.4 0.2 12 10 8 6 4 2 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13553 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT13554 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1169-4/4