TIG065E8 Ordering number : ENA1862 SANYO Semiconductors DATA SHEET TIG065E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance • • • Low voltage drive (2.5V) Built-in Gate-to-Emitter protection diode dv / dt guarantee* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 V Gate-to-Emitter Voltage (DC) VGES ±4 V Gate-to-Emitter Voltage (Pulse) VGES PW≤1ms Collector Current (Pulse) ICP VGE=2.5V, CM=100μF VCE≤320V, starting Tch=25°C ±5 V 150 A 400 V / μs Maximum Collector-to-Emitter dv / dt dv / dt Channel Temperature Tch 150 °C Storage Temperature Tstg -40 to +150 °C * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1. Package Dimensions Product & Package Information unit : mm (typ) 7011A-004 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3000 pcs./reel Top View Packing Type: TL 0.25 2.9 Marking 0.15 8 5 ZE 2.3 4 1 0.65 0.9 0.25 LOT No. TL 0.3 Electrical Connection 8 7 6 5 1 2 3 4 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.07 2.8 0 t o 0.02 Bot t om View SANYO : ECH8 http://semicon.sanyo.com/en/network N2410PJ TKIM TC-00002514 No. A1862-1/6 TIG065E8 Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage Ratings Conditions min typ Unit max V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) VCE=10V, IC=1mA IC=100A, VGE=2.5V Input Capacitance Cies VCE=10V, f=1MHz 3100 pF Output Capacitance Coes VCE=10V, f=1MHz 30 pF Reverse Transfer Capacitance Cres VCE=10V, f=1MHz 23 pF Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage 400 V VGE=±4V, VCE=0V 0.4 10 μA ±10 μA 0.9 V 7 V 4.2 Fig.1 Large Current R Load Switching Circuit RL CM + VCC RG TIG065E8 VGE 100kΩ Note1. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device of gate-series resistance RG when it is turned off. 1.8V 75 50 25 75 °C VCE=10V 25 100 0 Tc= --25 °C 125 Collector Current, IC -- A Collector Current, IC -- A 125 IC -- VGE 150 2.5V 3.0 V V GE = 4 .0V Tc=25°C °C IC -- VCE 150 100 75 50 25 0 1 2 3 4 5 6 7 8 Collector-to-Emitter Voltage, VCE -- V 9 10 IT16024 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Emitter Voltage, VGE -- V 4.0 IT16025 No. A1862-2/6 TIG065E8 VCE -- VGE Collector-to-Emitter Voltage, VCE -- V 9 8 7 6 4 IC=150A 130A 3 100A 5 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V IC =150A 5 130A 4 100A 3 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IT16027 VCE(sat) -- Tc 9 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V 8 7 6 IC =150A 5 130A 4 100A 3 2 8 7 =150A 3V, I C = V GE 00A V, I C=1 V GE=2.5 6 5 4 3 2 1 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE=10V IC=1mA 0.9 0.7 0.6 0.5 0.4 0.3 25 0.1 0 25 50 75 100 125 Case Temperature, Tc -- °C 7 5 3 2 tf 1000 7 5 tr 3 ) t d(on 2 2 3 5 7 100 2 3 Collector Current (Pulse), ICP -- A 5 7 1000 IT16032 150 IT16029 1000 7 5 3 2 100 7 5 10 150 Switching test circuit Fig.1 VGE=2.5V VCC=320V RG=140Ω CM=100μF PW=50μF td ( off ) 125 Cies 3 2 Coes Cres 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE -- V IT16030 SW Time -- ICP 10000 100 75 f=1MHz 3 2 --25 50 Cies, Coes, Cres -- VCE 10000 7 5 0.2 100 10 0 Case Temperature, Tc -- °C 0.8 0 --50 --25 IT16028 VGE(off) -- Tc 1.0 0 --50 5.0 Cies, Coes, Cres -- pF Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 6 10 Tc=75°C Gate-to-Emitter Voltage, VGE -- V Switching Time, SW Time -- ns 7 Gate-to-Emitter Voltage, VGE -- V 9 0 8 0 5.0 Tc=25°C 9 IT16026 VCE -- VGE 10 VCE -- VGE 10 Tc= --25°C 18 20 IT16031 SW Time -- RG 10000 Switching test circuit Fig.1 VGE=2.5V VCC=320V CCP=150A CM=100μF PW=50μF 7 Switching Time, SW Time -- ns Collector-to-Emitter Voltage, VCE -- V 10 5 3 2 tf 1000 7 tr 5 td(off) ) t d(on 3 2 100 0 20 40 60 80 100 120 140 160 Gate Series Resistance, RG -- Ω 180 200 IT16033 No. A1862-3/6 TIG065E8 dv / dt -- RG Switching test circuit Fig.1 VGE=2.5V VCC=320V ICP=150A Turn OFF dv / dt -- V / μs 500 400 300 200 100 0 0 50 100 150 200 250 300 Gate Series Resistance, RG -- Ω Tc=25°C 140 Tc=25°C 150 100 50 Tc=70°C 120 100 80 60 40 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V CM -- ICP 500 5.0 5.5 IT16104 VCE=320V VGE=3V 450 Main Capacitor, CM -- μF Main Capacitor, CM -- μF Tc=70°C 200 160 IT16103 VCE=320V VGE=2.5V 250 VCE=320V CM=100μF 0 0 350 CM -- ICP 300 ICP -- VGE 180 Collector Current (Pulse), ICP -- A 600 400 Tc=70°C 350 Tc=25°C 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 Collector Current (Pulse), ICP -- A IT16036 dv / dt -- Turn OFF IC 500 Turn OFF dv / dt, dv / dt -- V / μs 160 0 0 20 40 60 80 100 120 140 Collector Current (Pulse), ICP -- A 160 IT16037 Tc=25°C VCE≤320V 400 300 200 100 0 0 20 40 60 80 100 120 140 Turn OFF Collector Current, Turn OFF IC -- A 160 IT16038 No. A1862-4/6 TIG065E8 Definition of dv/dt dv/dt is defined as the maximum slope of the below VCE curve during turn-off period. dv/dt=ΔVCE/Δt=ΔVCE/100ns Overall waveform Enlarged picture of turn-off period Turn-off period V,I VCE Turn off VCE Δt=100ns IC ICP ΔVCE Turn off IC IC t VCE IT15323 Definition of Switching Time VGE VGE:90% VGE:10% t VCE VCE:90% VCE:10% VCE:10% t IC td(on) tr td(off) IC:90% IC:10% t tf IT15324 No. A1862-5/6 TIG065E8 Note : TIG065E8 has protection diode between gate and emitter but handling it requires sufficient care to be taken. 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