SECOS 2SB1197K_10

2SB1197K
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
SC-59
Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA)
IC =-0.8A
A
L
3
3
MECHANICAL DATA
C B
Top View
1
Case: SC-59,
Weight: 0.008 grams(approx.)
1
2
K
E
2
D
CLASSIFICATION OF hFE
Product-Rank
2SB1197K-Q
2SB1197K-R
Range
120~270
180~390
Marking
AHQ
AHR
F
REF.
A
B
C
D
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SC-59
3K
7’ inch
H
G
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
E
1.70
2.30
F
0.35
0.50
J
G
H
J
K
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
L
0.85
REF.
1.15
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Ratings
Unit
Collector to Base Voltage
Parameter
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-32
V
Emitter to Base Voltage
VEBO
-5
V
Collector Currrent
IC
-800
mA
Total Power Dissipation
Pc
200
mW
TJ, TSTG
+150, -55 ~ +150
℃
Junction & Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
-40
-
-
V
IC=-50μA
Collector-emitter breakdown voltage
BVCEO
-32
-
-
V
IC=-1mA
Emitter-base breakdown voltage
BVEBO
-5
-
-
V
IE=-50μA
ICBO
-
-
-0.5
μA
VCB=-20V
Collector cut-off current
Test Conditions
IEBO
-
-
-0.5
μA
VEB= -4V
VCE(sat)
-
-
-0.5
V
IC=-500mA, IB=-50mA
DC current gain
hFE
120
-
390
Transition frequency
fT
50
200
-
MHz
COB
-
12
30
pF
Emitter cut-off current
Collector-emitter saturation voltage
Collector output capacitance
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
VCE=-3V, IC=-100mA
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 2
2SB1197K
Elektronische Bauelemente
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 2