SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907A • Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at -60V -60V -5V -600mA 400mW 2.28mW/°C 1.8W 10.3mW/°C -65 to +200°C -65 to +200°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJA RθJC Min. Typ. Max. Units Thermal Resistance, Junction To Ambient 437.5 °C/W Thermal Resistance, Junction To Case 97.2 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3553 Issue 2 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = -10mA IB = 0 -60 IC = -10µA IE = 0 -60 V(BR)EBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage IE = -10µA IC = 0 -5 ICEX Collector Cut-Off Current VCE = -30V VBE = -0.5V ICBO Collector Cut-Off Current VCB = -50V IE = 0 (1) V(BR)CEO V(BR)CBO (1) VCE(sat) VBE(sat) hFE (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Min. Typ Max. V -50 -0.01 TA = 150°C -10 IC = -150mA IB = -15mA -0.4 IC = -500mA IB = -50mA -1.6 IC = -150mA IB = -15mA IC = -500mA IB = -50mA IC = -0.1mA VCE = -10V 75 IC = -1.0mA VCE = -10V 100 IC = -10mA VCE = -10V 100 IC = -150mA VCE = -10V 100 IC = -500mA VCE = -10V 50 IC = -50mA VCE = -20V -0.6 Units nA µA V -1.3 -2.6 300 DYNAMIC CHARACTERISTICS fT Transition Frequency Cobo Output Capacitance MHz VCB = -10V IE = 0 8 f = 1.0MHz Cibo Input Capacitance ton Turn-On Time toff 200 f = 100MHz VEB = -2V pF IC = 0 30 f = 1.0MHz Turn-Off Time IC = -150mA VCC = -30V IB1 = -15mA IC = -150mA VCC = -30V IB1 = - IB2 = -15mA 45 ns 300 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3553 Issue 2 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907A MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO-18 (TO-206AA) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3553 Issue 2 Page 3 of 3