SEME-LAB 2N2907A

SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2907A
•
Low Power
•
Hermetic TO-18 Metal package.
•
Ideally suited for High Speed Switching
and General Purpose Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
PD
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
TC = 25°C
Total Power Dissipation at
-60V
-60V
-5V
-600mA
400mW
2.28mW/°C
1.8W
10.3mW/°C
-65 to +200°C
-65 to +200°C
Derate Above 25°C
TJ
Tstg
Junction Temperature Range
Storage Temperature Range
THERMAL PROPERTIES
Symbols
Parameters
RθJA
RθJC
Min.
Typ.
Max.
Units
Thermal Resistance, Junction To Ambient
437.5
°C/W
Thermal Resistance, Junction To Case
97.2
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 3553
Issue 2
Page 1 of 3
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
IC = -10mA
IB = 0
-60
IC = -10µA
IE = 0
-60
V(BR)EBO
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
IE = -10µA
IC = 0
-5
ICEX
Collector Cut-Off Current
VCE = -30V
VBE = -0.5V
ICBO
Collector Cut-Off Current
VCB = -50V
IE = 0
(1)
V(BR)CEO
V(BR)CBO
(1)
VCE(sat)
VBE(sat)
hFE
(1)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Min.
Typ
Max.
V
-50
-0.01
TA = 150°C
-10
IC = -150mA
IB = -15mA
-0.4
IC = -500mA
IB = -50mA
-1.6
IC = -150mA
IB = -15mA
IC = -500mA
IB = -50mA
IC = -0.1mA
VCE = -10V
75
IC = -1.0mA
VCE = -10V
100
IC = -10mA
VCE = -10V
100
IC = -150mA
VCE = -10V
100
IC = -500mA
VCE = -10V
50
IC = -50mA
VCE = -20V
-0.6
Units
nA
µA
V
-1.3
-2.6
300
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Cobo
Output Capacitance
MHz
VCB = -10V
IE = 0
8
f = 1.0MHz
Cibo
Input Capacitance
ton
Turn-On Time
toff
200
f = 100MHz
VEB = -2V
pF
IC = 0
30
f = 1.0MHz
Turn-Off Time
IC = -150mA
VCC = -30V
IB1 = -15mA
IC = -150mA
VCC = -30V
IB1 = - IB2 = -15mA
45
ns
300
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 3553
Issue 2
Page 2 of 3
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2907A
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
12.7 (0.500)
min.
5.33 (0.210)
4.32 (0.170)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
3
1
2
TO-18 (TO-206AA) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 3553
Issue 2
Page 3 of 3