SILICON NPN TRANSISTOR 2N5786 • Low Saturation Voltage. High Gain At High Current. • Hermetic TO39 (TO-205AD) Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCER VCEO VEBO IC IB PD PD TJ Tstg Collector – Base Voltage RBE = 100Ω Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25 Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 45V 45V 40V 3.5V 3.5A 1.0A 1.0W 5.71mW/°C 10W 57.14mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJC Thermal Resistance, Junction To Case 17.5 °C/W RθJA Thermal Resistance, Junction To Ambient 175 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3079 Issue 2 Page 1 of 3 SILICON NPN TRANSISTOR 2N5786 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols (1) V(BR)CEO V(BR)CER (1) Parameters Test Conditions Min. Typ Max. Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage IC = 100mA IB = 0 40 IC = 100mA RBE = 100Ω 45 VCE = 40V RBE = 100Ω 10 µA TC = 150°C 1.0 mA VBE = -1.5V 10 µA TC = 150°C 1.0 mA V ICER Collector Cut-Off Current ICEX Collector Cut-Off Current ICEO Collector Cut-Off Current VCE = 25V IB = 0 100 IEBO Emitter Cut-Off Current VEB = 3.5V IC = 0 10 hFE Forward-current transfer ratio (1) (1) VBE Base-Emitter Voltage (1) VCE(sat) Collector-Emitter Saturation Voltage VCE = 45V IC = 1.6A IC = 3.2A VCE = 2V 20 Units µA 100 4 IC = 1.6A VCE = 2V 1.5 IC = 1.6A IB = 0.16A 1.0 IC = 3.2A IB = 0.8A 2 IC = 100mA VCE = 2V V DYNAMIC CHARACTERISTICS hfe Magnitude of commonemitter, small-signal shortcircuit, forward-current transfer ratio hfe Small-Signal Current Gain ton Turn-On Time toff Notes (1) 5 20 f = 4MHz IC = 100mA VCE = 2V 25 - f = 1.0 KHz Turn-Off Time IC = 1.0A VCC = 30V 5 IB1 = 0.1A IC = 1.0A µS VCC = 30V 15 IB1 = - IB2 = 0.1A Pulse Width ≤ 380us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3079 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR 2N5786 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 3079 Issue 2 Page 3 of 3