MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 • Low Leakage Current, High Transition Frequency (FT) = 100MHz Typ. • Hermetic TO-39 Metal Package. • Ideally Suited For Medium Current Switching And Amplifier Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VCER VCEX VEBO IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage RBE = 10Ω Collector – Emitter Voltage VBE = -1.5V Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 60V 40V 50V 60V 5V 0.7A 1.0W 5.71mW/°C 5W 28.6mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJA Thermal Resistance, Junction To Ambient 175 °C/W RθJC Thermal Resistance, Junction To Case 35 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3065 Issue 2 Page 1 of 3 MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO IC = 100µA IB = 0 40 IC = 10mA RBE = 10Ω 50 IC = 100µA IE = 0 60 V(BR)EBO Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage IE = 100µA IC = 0 5 ICBO Collector Cut-Off Current VCB = 30V IE = 0 0.25 IEBO Emitter Cut-Off Current VEB = 4V IC = 0 0.25 Forward-current transfer ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 150mA VCE = 10V IC = 150mA IB = 15mA 1.4 IC = 150mA IB = 15mA 1.7 IC = 50mA VCE = 10V V(BR)CER (1) V(BR)CBO hFE (1) (1) VCE(sat) VBE(sat) (1) Min. Typ Max. Units V 50 µA 250 V DYNAMIC CHARACTERISTICS fT Transition Frequency Cobo Output Capacitance Cibo Input Capacitance 100 MHz f = 20MHz VCB = 10V IE = 0 15 pF 80 pF f = 1.0MHz VEB = 0.5V IC = 0 f = 1.0MHz Notes (1) Pulse Width ≤ 380us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3065 Issue 2 Page 2 of 3 MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 3065 Issue 2 Page 3 of 3