SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM • Dual Silicon Planar NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD Each Side Total Device 30V 20V 5V 100mA 200mA 300mW 500mW(1) 2mW/°C 3.3mW/°C 750mW 5mW/°C -65 to +175°C -65 to +175°C Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES (Each Side) Symbols Parameters RθJA RθJC Min. Typ. Max. Units Thermal Resistance, Junction To Ambient 500 °C/W Thermal Resistance, Junction To Case 200 °C/W Notes (1) Total device power dissipation limited by package. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8124 Issue 1 Page 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated) Symbols Parameters ICBO Collector-Cut-Off Current V(BR)CBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage (2) V(BR)CEO V(BR)EBO (2) VBE Base-Emitter Voltage (2) VCE(sat) VBE(sat) hFE (2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (2) Forward-current transfer ratio Test Conditions Min. Typ VCB = 20V TA = 150°C IC = 10µA 30 IC = 10mA 20 IE = 10µA 5 Max. Units 15 nA 15 µA V IC = 2mA VCE = 5V IC = 10mA VCE = 5V 700 IC = 10mA IB = 0.5mA 250 IC = 100mA IB = 5mA 600 IC = 10mA IB = 0.5mA 750 IC = 100mA IB = 5mA 900 IC = 2mA VCE = 5V 200 IC = 10µA VCE = 5V 40 IC = 10mA VCE = 5V 550 700 mV 800 DYNAMIC CHARACTERISTICS fT Transition Frequency hfe Small-Signal Current Gain Cobo Output Capacitance Cibo Input Capacitance 150 MHz f = 100MHz IC = 2mA VCE = 5V 240 900 f = 1.0KHz VCB = 10V IE = 0 6 pF f = 1.0MHz VEB = 0.5V IC = 0 12 pF f = 1.0MHz Notes (2) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8124 Issue 1 Page 2 of 3 SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM MECHANICAL DATA Dimensions in mm (inches) 3 2 1 4 A 6 0.23 rad. (0.009) 5 6.22 ± 0.13 (0.245 ± 0.005) 4.32 ± 0.13 (0.170 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8124 Issue 1 Page 3 of 3