SILICON NPN TRANSISTOR BFY50 • V(BR)CEO = 35V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 80V 35V 6V 1.0A 0.8W 4.57mW/°C 5W 28.6mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJA Thermal Resistance, Junction To Ambient 218.75 °C/W RθJC Thermal Resistance, Junction To Case 35 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3085 Issue 2 Page 1 of 3 SILICON NPN TRANSISTOR BFY50 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = 10mA IB = 0 35 IC = 10µA IE = 0 80 V(BR)EBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage IE = 10µA IC = 0 6 ICBO Collector Cut-Off Current VCB = 60V IE = 0 50 nA TA = 100°C 2.5 µA IEBO Emitter Cut-Off Current IC = 0 50 nA TA = 100°C 2.8 µA (1) V(BR)CEO V(BR)CBO hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VEB = 5V Min. Typ Max. Units V IC = 10mA VCE = 6V 20 IC = 150mA VCE = 6V 30 IC = 1.0A VCE = 6V 15 IC = 150mA IB = 15mA 0.2 IC = 1.0A IB = 100mA 1.0 IC = 1.0A IB = 100mA 2 IC = 1.0mA VCE = 6V V DYNAMIC CHARACTERISTICS hfe Small-Signal Current Gain fT Transition Frequency Cobo Output Capacitance 10 f = 1.0KHz IC = 50mA VCE = 6V 60 MHz f = 20MHz VCB = 12V IE = 0 12 pF f = 1.0MHz Notes (1) Pulse Width ≤ 380us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3085 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR BFY50 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 3085 Issue 2 Page 3 of 3