SEMIKRON SEMIX402GAL066HDS

SEMiX402GAL066HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
600
V
Tc = 25 °C
502
A
Tc = 80 °C
379
A
400
A
ICnom
ICRM
SEMiX® 2s
Trench IGBT Modules
ICRM = 2xICnom
800
A
-20 ... 20
V
6
µs
-40 ... 175
°C
Tc = 25 °C
543
A
Tc = 80 °C
397
A
400
A
VGES
tpsc
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj = 150 °C
Tj
Inverse diode
IF
SEMiX402GAL066HDs
Tj = 175 °C
IFnom
Features
IFRM
IFRM = 2xIFnom
800
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1800
A
-40 ... 175
°C
Tc = 25 °C
566
A
Tc = 80 °C
412
A
400
A
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Freewheeling diode
Typical Applications*
IFnom
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Tj
IF
Tj = 175 °C
IFRM
IFRM = 2xIFnom
800
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1800
A
-40 ... 175
°C
Tj
Module
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.45
1.85
V
Tj = 150 °C
1.7
2.1
V
VCE0
Tj = 25 °C
0.9
1
V
Tj = 150 °C
0.85
0.9
V
rCE
Tj = 25 °C
1.4
2.1
mΩ
IGBT
VCE(sat)
IC = 400 A
VGE = 15 V
chiplevel
VGE = 15 V
Tj = 150 °C
VGE(th)
VGE=VCE, IC = 6.4 mA
ICES
VGE = 0 V
VCE = 600 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 25 °C
5
2.1
3.0
mΩ
5.8
6.5
V
0.15
0.45
mA
Tj = 150 °C
mA
f = 1 MHz
24.7
nF
f = 1 MHz
1.54
nF
f = 1 MHz
0.73
nF
QG
VGE = - 8 V...+ 15 V
3200
nC
RGint
Tj = 25 °C
1.00
Ω
GAL
© by SEMIKRON
Rev. 0 – 16.04.2010
1
SEMiX402GAL066HDs
Characteristics
Symbol
Conditions
td(on)
VCC = 300 V
IC = 400 A
Tj = 150 °C
150
Tj = 150 °C
125
ns
RG on = 4.5 Ω
RG off = 4.5 Ω
Tj = 150 °C
22
mJ
tr
Eon
Trench IGBT Modules
SEMiX402GAL066HDs
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Unit
ns
900
ns
Tj = 150 °C
65
ns
Eoff
Tj = 150 °C
24
mJ
Rth(j-c)
per IGBT
Inverse diode
VF = VEC IF = 400 A
VGE = 0 V
chip
VF0
rF
Qrr
Err
Rth(j-c)
rF
IRRM
Qrr
Err
Rth(j-c)
0.12
K/W
Tj = 25 °C
1.4
1.60
V
Tj = 150 °C
1.4
1.6
V
Tj = 25 °C
0.9
1
1.1
V
Tj = 150 °C
0.75
0.85
0.95
V
Tj = 25 °C
0.8
1.0
1.3
mΩ
Tj = 150 °C
1.1
1.4
1.6
mΩ
IF = 400 A
Tj = 150 °C
di/dtoff = 3700 A/µs T = 150 °C
j
VGE = -8 V
Tj = 150 °C
VCC = 300 V
per diode
Freewheeling diode
VF = VEC IF = 400 A
VGE = 0 V
chip
VF0
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
max.
Tj = 150 °C
IRRM
Features
typ.
tf
td(off)
SEMiX® 2s
min.
250
A
47
µC
10
mJ
0.15
K/W
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
1.3
1.5
V
Tj = 25 °C
0.9
1
1.1
V
Tj = 150 °C
0.75
0.85
0.95
V
Tj = 25 °C
0.7
0.9
1.1
mΩ
1.2
1.4
mΩ
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 3700 A/µs T = 150 °C
j
VGE = -8 V
Tj = 150 °C
VCC = 300 V
per diode
1.0
250
A
47
µC
10
mJ
0.15
K/W
Module
LCE
RCC'+EE'
18
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
0.045
to terminals (M6)
Mt
nH
K/W
3
5
Nm
2.5
5
Nm
Nm
w
250
g
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
493 ± 5%
Ω
3550
±2%
K
GAL
2
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX402GAL066HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 16.04.2010
3
SEMiX402GAL066HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX402GAL066HDs
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 16.04.2010
5