SEMiX604GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX® 4s Trench IGBT Modules ICRM = 3xICnom 1800 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 707 A Tc = 80 °C 529 A 600 A VGES tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SEMiX604GB12E4s Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 IFRM IFRM = 3xIFnom 1800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 3240 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Typical Applications* • AC inverter drives • UPS • Electronic Welding Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE Tj = 25 °C 1.7 1.9 mΩ IGBT Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 6,2 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω VCE(sat) IC = 600 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 °C VGE(th) VGE=VCE, IC = 24 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 600 V IC = 600 A td(on) tr Eon Tj = 25 °C 2.7 mΩ 6.5 V 0.12 0.36 mA mA f = 1 MHz 37.2 nF f = 1 MHz 2.32 nF f = 1 MHz 2.04 nF 3400 nC 1.25 Ω Tj = 150 °C 374 ns Tj = 150 °C 85 ns Tj = 150 °C 35 mJ 1277 ns 114 ns 110.4 mJ Eoff Rth(j-c) per IGBT tf 2.5 5.8 Tj = 150 °C RG on = 1.7 Ω Tj = 150 °C RG off = 6.9 Ω di/dton = 7100 A/µs Tj = 150 °C di/dtoff = 6350 A/µs Tj = 150 °C td(off) 5 0.049 K/W GB © by SEMIKRON Rev. 0 – 05.05.2010 1 SEMiX604GB12E4s Characteristics Symbol Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF SEMiX® 4s IRRM Qrr Trench IGBT Modules Err Rth(j-c) SEMiX604GB12E4s • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Tj = 25 °C Tj = 150 °C typ. max. Unit 2.1 2.46 V 2.1 2.4 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 1.1 1.4 1.6 mΩ 1.9 2.1 mΩ Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 6000 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 1.7 430 A 100 µC 44 mJ 0.086 K/W Module LCE RCC'+EE' Features min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 22 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.03 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 400 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 6,2 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω GB 2 Rev. 0 – 05.05.2010 © by SEMIKRON SEMiX604GB12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 05.05.2010 3 SEMiX604GB12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 05.05.2010 © by SEMIKRON SEMiX604GB12E4s SEMiX 4s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 05.05.2010 5