SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX®1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A VGES tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SEMiX151GAL12E4s Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A Tj Freewheeling diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tj Module Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE Tj = 25 °C 6.7 7.7 mΩ 10.0 10.7 mΩ 5.8 6.5 V 0.1 0.3 mA IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel VGE = 15 V VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 9.3 nF f = 1 MHz 0.58 nF f = 1 MHz 0.51 nF QG VGE = - 8 V...+ 15 V 850 nC RGint Tj = 25 °C 5.00 Ω GAL © by SEMIKRON Rev. 1 – 20.02.2009 1 SEMiX151GAL12E4s Characteristics Symbol Conditions td(on) VCC = 600 V IC = 150 A tr Eon SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s IRRM Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding Qrr Err Rth(j-c) 16.6 mJ 468 ns rF IRRM Qrr Err Rth(j-c) ns 91 ns 18.4 mJ 0.19 K/W Tj = 25 °C 2.1 2.46 V Tj = 150 °C 2.1 2.4 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 4.3 5.6 6.4 mΩ Tj = 150 °C 6.7 7.8 8.5 mΩ IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chip VF0 Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C ns Tj = 150 °C per IGBT rF Unit 42 Rth(j-c) Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 max. Tj = 150 °C Eoff tf typ. 204 RG on = 1 Ω Tj = 150 °C RG off = 1 Ω di/dton = 3900 A/µs Tj = 150 °C di/dtoff = 2000 A/µs Tj = 150 °C td(off) ® min. Tj = 150 °C Tj = 25 °C 115 A 23 µC 8.9 mJ 2.1 Tj = 150 °C 0.31 K/W 2.5 V 2.1 2.4 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 4.3 5.6 6.4 mΩ 7.8 8.5 mΩ Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 6.7 115 A 23 µC 8.9 mJ 0.31 K/W Module LCE RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 16 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.075 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 145 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GAL 2 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX151GAL12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 20.02.2009 3 SEMiX151GAL12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 20.02.2009 © by SEMIKRON SEMiX151GAL12E4s SEMiX 1s GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 1 – 20.02.2009 5