1SS301CCW SILICON EPITAXIAL PLANAR DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: PH Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current IO 100 mA Maximum (Peak) Forward Current IFM 300 mA Peak Forward Surge Current (tp = 10 ms) IFSM 2 A Total Power Dissipation Ptot 200 mW Junction Temperature TJ 125 O Storage Temperature Range Ts - 55 to + 125 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 100 mA VF - 1.2 V Reverse Current at VR = 30 V at VR = 80 V IR - 0.1 0.5 µA Total Capacitance at VR = 0, f = 1 MHz CT - 3 pF Reverse Recovery Time at IF = 10 mA, VR = 6 V, Irr = 1 mA, RL = 100 Ω trr - 4 ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 1SS301CCW SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008