1SS270A SILICON EPITAXIAL PLANAR DIODE for high speed switching Max. 0.45 Features Min. 27.5 Max. 1.9 • Low capacitance Black Cathode Band • Short reverse recovery time Black Part No. • High reliability XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 70 V Reverse Voltage VR 60 V Average Forward Current IO 150 mA Peak Forward Current IFM 450 mA Non-Repetitive Peak Forward Surge Current (1 s) IFSM 1 A Power Dissipation Ptot 250 mW Tj 175 O Ts - 65 to + 175 O Symbol Max. Unit Forward Voltage at IF = 10 mA VF 0.8 V Reverse Current at VR = 60 V IR 1 µA Capacitance between Terminals at VR = 1 V, f = 1 MHz CT 3 pF Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω trr 3.5 ns Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/06/2007 1SS270A SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/06/2007