2N6284 2N6287 Complementary power Darlington transistors Features ■ Complementary transistors in monolithic Darlington configuration ■ Integrated collector-emitter antiparallel diode Applications 1 ■ Audio power amplifier ■ DC-AC converter ■ General purpose switching applications 2 TO-3 Description The 2N6284 is an epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. The complementary PNP type is 2N6287. Figure 1. Internal schematic diagrams R1 typ. = 8 kΩ Table 1. R2 typ. = 60 kΩ Device summary Order code Marking Package Packaging 2N6284 2N6287 2N6284 2N6287 TO-3 Bag January 2009 Rev 3 1/8 www.st.com 8 Absolute maximum ratings 1 2N6284 - 2N6287 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter NPN 2N6284 PNP 2N6287 Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage 5 V Collector current 20 A Collector peak current (tP < 5 ms) 40 A Base current 0.5 A Ptot Total dissipation at TC = 25 °C 160 W Tstg Storage temperature -65 to 200 °C 200 °C IC ICM IB TJ (IC = 0) Max. operating junction temperature For PNP type voltage and current values are negative Table 3. Symbol Rthj-case 2/8 Thermal data Parameter Thermal resistance junction-case____ ____Max Value Unit 1.09 °C/W 2N6284 - 2N6287 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit 0.5 5 mA mA ICEV Collector cut-off current (VBE = -1.5 V) VCE = 100 V VCE = 100 V ICEO Collector cut-off current (IB = 0) VCE = 50 V 1 mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 2 mA VCEO(sus)(1) Tc = 150 °C Collector-emitter I = 100 mA sustaining voltage (IB = 0) C 100 V VCE(sat)(1) Collector-emitter saturation voltage IC = 10 A IC = 20 A __ IB = 40 mA IB = 200 mA 2 3 V V VBE(sat)(1) Base-emitter saturation voltage IC = 20 A __ IB = 200 mA 4 V VBE(1) Base-emitter voltage IC = 10 A __ VCE = 3 V 2.8 V hFE(1) DC current gain IC = 10 A_ IC = 20 A_ VCE = 3 V VCE = 3 V Small signal current gain IC = 10 A_ f = 1 kHz VCE = 3 V Collector-base capacitance (IE = 0) VCB = 10 V for 2N6284 for 2N6287 f = 100 kHz hfe CCBO 750 100 18000 300 400 600 pF pF 1. Pulsed duration = 300 µs, duty cycle ≤1.5 % For PNP type voltage and current values are negative 3/8 Electrical characteristics 2N6284 - 2N6287 2.1 Electrical characteristics (curves) Figure 2. DC current gain (NPN type) Figure 3. DC current gain (PNP type) hFE G-5350 TC =150°C 10000 1000 TC =25°C TC =-55°C VCE =5V 100 0.1 Figure 4. DC current gain (NPN type) Figure 6. Collector-emitter saturation voltage Figure 7. (NPN type) 4/8 Figure 5. 1 10 IC (A) DC current gain (PNP type) Collector-emitter saturation voltage (PNP type) 2N6284 - 2N6287 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5/8 Revision history 4 2N6284 - 2N6287 Revision history Table 5. 6/8 Document revision history Date Revision 02-Mar-2000 2 26-Jan-2009 3 Changes Added paragraph 2.1 2N6284 - 2N6287 Revision history TO-3 mechanical data mm. DIM. min. typ max. A 11.00 13.10 B 0.97 1.15 C 1.50 1.65 D 8.32 8.92 E 19.00 20.00 G 10.70 11.10 N 16.50 17.20 P 25.00 26.00 R 4.00 4.09 U 38.50 39.30 V 30.00 30.30 0015923C 7/8 2N6284 - 2N6287 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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