STMICROELECTRONICS STGB6NB60HD

STGB6NB60HD
N-CHANNEL 6A - 600V - D2PAK
Low Drop PowerMESH™ IGBT
PRELIMINARY DATA
General features
■
Type
VCES
VCE(sat)
(Max)@ 25°C
IC
@100°C
STGB6NB60HD
600V
< 2.7V
6A
LOWER CRES / CIES RATIO (NO CROSS
CONDUCTION SUSCEPTIBILITY)
■
HIGH FREQUENCY OPERATION
■
VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
■
TYPICAL SHORT CIRCUIT WITHSTAND
TIME 5MICROS S-family, 4micro H-family
■
CO-PACKAGE WITH TURBOSWITCH™
ANTIPARALLEL DIODE
3
1
D²PAK
Internal schematic diagram
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™
IGBTs,
with
outstanding
performances. The suffix “H” identifies a family
optimized for high frequency application.
Applications
■
HIGH FREQUENCY MOTOR CONTROL
■
SMPS and PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
Order codes
Sales Type
Marking
Package
Packaging
STGB6NB60HD
GB6NB60HD
D²PAK
TAPE & REEL
November 2005
This is a preliminary information on a new product in development or undergoing evaluation. Details are subject to change
without notice
Rev 1
1/10
www.st.com
10
STGB6NB60HD
1 Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value
Unit
Collector-Emitter Voltage (VGS = 0)
600
V
IC
Collector Current (continuous) at 25°C
12
A
IC
Collector Current (continuous) at 100°C
6
A
Collector Current (pulsed)
48
A
± 20
V
80
W
– 65 to 150
°C
VCES
ICM Note 1
Parameter
VGE
Gate-Emitter Voltage
PTOT
Total Dissipation at TC = 25°C
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Table 2.
Thermal resistance
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case
1.56
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
62.5
°C/W
Rthc-h
2/10
Thermal Resistance case-hetsink
0.5
°C/W
STGB6NB60HD
2
2 Electrical characteristics
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test Conditions
VBR(CES)
Collectro-Emitter Breakdown
Voltage
VCE(SAT)
Collector-Emitter Saturation
Voltage
VGE= 15V, IC= 6A, Tj= 125°C
Gate Threshold Voltage
VCE= VGE, IC= 250µA
ICES
Collector-Emitter Leakage
Current (VGE = 0)
VCE = Max Rating,Tc=25°C
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
Forward Transconductance
VCE = 25V, IC= 6A
VGE(th)
gfs
Table 4.
Symbol
C ies
C oes
Cres
Qg
Typ.
Max.
600
VGE= 15V, IC= 6A, Tj= 25°C
Unit
V
2.1
1.6
3
VCE = Max Rating, Tc=125°C
2.7
V
V
5
V
50
500
µA
µA
± 100
nA
3
4.5
S
Min.
Typ.
Max.
Unit
390
45
10
560
68
15
730
90
20
pF
pF
pF
42
7.9
17.6
55
nC
nC
nC
Dynamic
Parameter
Test Conditions
Input Capacitance
VCE = 25V, f = 1MHz, V GE = 0
Output Capacitance
Reverse Transfer Capacitance
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
ICL
Turn-Off SOA Minimum
Current
Qge
IC = 250µA, V GE = 0
Min.
VCE = 480V, IC = 6A,
VGE = 15V,
(see Figure 2)
Vclamp = 480V , Tj = 150°C
RG = 10Ω, VGE= 15V
52
A
3/10
STGB6NB60HD
2 Electrical characteristics
Table 5.
Symbol
td(on)
tr
(di/dt)on
tc
tr(Voff)
td(off)
tf
tc
tr(Voff)
td(off)
tf
Table 6.
Switching on/off (inductive load)
Parameter
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Cross-over Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Cross-over Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Parameter
Eon Note 2
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
Ets
Eon Note 2
Eoff Note 3
Ets
Table 7.
Symbol
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
If
Forward Current
Forward Current pulsed
trr
Irrm
RG= 10Ω, VGE= 15V, Tj= 125°C
(see Figure 3)
Vcc =480V, IC = 6A,
RGE=10Ω , VGE =15V, Tj=25°C
(see Figure 3)
Vcc =480V, IC = 6A,
RGE=10Ω , VGE =15V, Tj=125°C
(see Figure 3)
Test Conditions
Min.
Vcc =480V, IC = 6A,
RGE=10Ω , VGE =15V, Tj=25°C
(see Figure 3)
Vcc =480V, IC = 6A,
RGE=10Ω , VGE =15V, Tj=125°C
(see Figure 3)
Parameter
Forward On-Voltage
Qrr
VCC = 480V, IC = 6A
Typ.
Max.
Unit
15
48
160
ns
ns
A/µs
85
20
75
70
ns
ns
ns
150
50
110
110
ns
ns
ns
Typ.
Max.
Unit
150
85
235
µJ
µJ
µJ
185
220
405
µJ
µJ
µJ
Collector-emitter diode
Vf
Ifm
Min.
Switching energy (inductive load)
Symbol
Eoff Note 3
Test Conditions
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
If = 6A
If = 6A, Tj = 125°C
If = 6A, VR = 200V,
Tj = 125°C, di/dt = 100A/µs
(see Figure 4)
Min.
Typ.
Max.
Unit
1.8
1.4
2.2
V
V
6
48
A
A
100
135
2.7
ns
ns
nC
(1)Pulse width limited by max. junction temperature
(2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the
IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current
4/10
STGB6NB60HD
3
3 Test Circuits
Test Circuits
Figure 1.
Test Circuit for Inductive Load
Switching
Figure 2.
Gate Charge Test Circuit
Figure 3.
Switching Waveform
Figure 4.
Diode Recovery Time Waveform
5/10
4 Package mechanical data
4
STGB6NB60HD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
6/10
STGB6NB60HD
4 Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
MIN.
4.4
TYP
4.6
0.173
TYP.
0.181
MAX.
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
10.4
0.393
4.88
5.28
0.192
0.208
E1
G
0.368
0.315
8.5
0.334
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0º
0.015
4º
3
V2
1
7/10
STGB6NB60HD
5 Packaging mechanical data
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
MAX.
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
8/10
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STGB6NB60HD
6
6 Revision History
Revision History
Date
Revision
18-Nov-2005
1
Changes
Initial release.
9/10
STGB6NB60HD
6 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
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10/10