STGB6NB60HD N-CHANNEL 6A - 600V - D2PAK Low Drop PowerMESH™ IGBT PRELIMINARY DATA General features ■ Type VCES VCE(sat) (Max)@ 25°C IC @100°C STGB6NB60HD 600V < 2.7V 6A LOWER CRES / CIES RATIO (NO CROSS CONDUCTION SUSCEPTIBILITY) ■ HIGH FREQUENCY OPERATION ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4micro H-family ■ CO-PACKAGE WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 D²PAK Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application. Applications ■ HIGH FREQUENCY MOTOR CONTROL ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES Order codes Sales Type Marking Package Packaging STGB6NB60HD GB6NB60HD D²PAK TAPE & REEL November 2005 This is a preliminary information on a new product in development or undergoing evaluation. Details are subject to change without notice Rev 1 1/10 www.st.com 10 STGB6NB60HD 1 Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Value Unit Collector-Emitter Voltage (VGS = 0) 600 V IC Collector Current (continuous) at 25°C 12 A IC Collector Current (continuous) at 100°C 6 A Collector Current (pulsed) 48 A ± 20 V 80 W – 65 to 150 °C VCES ICM Note 1 Parameter VGE Gate-Emitter Voltage PTOT Total Dissipation at TC = 25°C Tj Operating Junction Temperature Tstg Storage Temperature Table 2. Thermal resistance Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case 1.56 °C/W Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W Rthc-h 2/10 Thermal Resistance case-hetsink 0.5 °C/W STGB6NB60HD 2 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. Static Symbol Parameter Test Conditions VBR(CES) Collectro-Emitter Breakdown Voltage VCE(SAT) Collector-Emitter Saturation Voltage VGE= 15V, IC= 6A, Tj= 125°C Gate Threshold Voltage VCE= VGE, IC= 250µA ICES Collector-Emitter Leakage Current (VGE = 0) VCE = Max Rating,Tc=25°C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 Forward Transconductance VCE = 25V, IC= 6A VGE(th) gfs Table 4. Symbol C ies C oes Cres Qg Typ. Max. 600 VGE= 15V, IC= 6A, Tj= 25°C Unit V 2.1 1.6 3 VCE = Max Rating, Tc=125°C 2.7 V V 5 V 50 500 µA µA ± 100 nA 3 4.5 S Min. Typ. Max. Unit 390 45 10 560 68 15 730 90 20 pF pF pF 42 7.9 17.6 55 nC nC nC Dynamic Parameter Test Conditions Input Capacitance VCE = 25V, f = 1MHz, V GE = 0 Output Capacitance Reverse Transfer Capacitance Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ICL Turn-Off SOA Minimum Current Qge IC = 250µA, V GE = 0 Min. VCE = 480V, IC = 6A, VGE = 15V, (see Figure 2) Vclamp = 480V , Tj = 150°C RG = 10Ω, VGE= 15V 52 A 3/10 STGB6NB60HD 2 Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on tc tr(Voff) td(off) tf tc tr(Voff) td(off) tf Table 6. Switching on/off (inductive load) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Parameter Eon Note 2 Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Ets Eon Note 2 Eoff Note 3 Ets Table 7. Symbol Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses If Forward Current Forward Current pulsed trr Irrm RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 3) Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=25°C (see Figure 3) Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=125°C (see Figure 3) Test Conditions Min. Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=25°C (see Figure 3) Vcc =480V, IC = 6A, RGE=10Ω , VGE =15V, Tj=125°C (see Figure 3) Parameter Forward On-Voltage Qrr VCC = 480V, IC = 6A Typ. Max. Unit 15 48 160 ns ns A/µs 85 20 75 70 ns ns ns 150 50 110 110 ns ns ns Typ. Max. Unit 150 85 235 µJ µJ µJ 185 220 405 µJ µJ µJ Collector-emitter diode Vf Ifm Min. Switching energy (inductive load) Symbol Eoff Note 3 Test Conditions Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions If = 6A If = 6A, Tj = 125°C If = 6A, VR = 200V, Tj = 125°C, di/dt = 100A/µs (see Figure 4) Min. Typ. Max. Unit 1.8 1.4 2.2 V V 6 48 A A 100 135 2.7 ns ns nC (1)Pulse width limited by max. junction temperature (2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) (3) Turn-off losses include also the tail of the collector current 4/10 STGB6NB60HD 3 3 Test Circuits Test Circuits Figure 1. Test Circuit for Inductive Load Switching Figure 2. Gate Charge Test Circuit Figure 3. Switching Waveform Figure 4. Diode Recovery Time Waveform 5/10 4 Package mechanical data 4 STGB6NB60HD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/10 STGB6NB60HD 4 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 10.4 0.393 4.88 5.28 0.192 0.208 E1 G 0.368 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 7/10 STGB6NB60HD 5 Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 8/10 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STGB6NB60HD 6 6 Revision History Revision History Date Revision 18-Nov-2005 1 Changes Initial release. 9/10 STGB6NB60HD 6 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10