STMICROELECTRONICS STGB14NC60KD

STGP14NC60KD - STGF14NC60KD
STGB14NC60KD
N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK
SHORT CIRCUIT RATED PowerMESH™ IGBT
Table 1: General Features
Figure 1: Package
TYPE
VCES
VCE(sat) (Max)
@25°C
IC (#)
@100°C
STGB14NC60KD
STGF14NC60KD
STGP14NC60KD
600 V
600 V
600 V
< 2.5 V
< 2.5 V
< 2.5 V
14 A
7A
14 A
■
■
■
■
■
■
3
LOWER ON-VOLTAGE DROP (Vcesat)
OFF LOSSES INCLUDE TAIL CURRENT
LOWER CRES / C IES RATIO
SWITCHING LOSSES INCLUDE DIODE
RECOVERY ENERGY
VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short circuit withstand capability.
1
3
2
1
2
TO-220FP
TO-220
3
1
D2PAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
2
PACKAGING
STGB14NC60KDT4
GB14NC60KD
D PAK
TAPE & REEL
STGF14NC60KD
GF14NC60KD
TO-220FP
TUBE
STGP14NC60KD
GP14NC60KD
TO-220
TUBE
Rev.2
July 2005
1/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
STGB14NC60KD
STGP14NC60KD
Unit
STGF14NC60KD
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at T C = 25°C (#)
25
11
A
IC
Collector Current (continuous) at T C = 100°C (#)
14
7
A
ICM ( )
IF
PTOT
Collector Current (pulsed)
50
Diode RMS Forward Current at TC = 25°C
20
Total Dissipation at T C = 25°C
80
Derating Factor
VISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
Tstg
Storage Temperature
Tj
A
A
25
W
0.64
0.20
W/°C
--
2500
V
– 55 to 150
Operating Junction Temperature
°C
( ) Pulse width limited by Max Junction Temperature.
Table 4: Thermal Data
Min.
Rthj-case Thermal Resistance Junction-case
Typ.
Max.
TO-220
D²PAK
TO-220FP
Rthj-amb
TL
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
1.56
°C/W
5.0
°C/W
62.5
°C/W
300
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters
Symbol
Parameter
VBR(CES)
Collector-Emitter
Breakdown Voltage
IC= 1 mA, VGE= 0
ICES
Collector cut-off Current
(VGE = 0)
VCE= Max Rating, TC= 25°C
VCE= Max Rating, TC= 125°C
IGES
Gate-Emitter Leakage
Current (V CE = 0)
VGE= ±20V , VCE= 0
VGE(th)
Gate Threshold Voltage
VCE= VGE, IC= 250 µA
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE= 15V, IC= 7A
VGE= 15V, IC= 7A, Tc= 125°C
(#) Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = -------------------------------------------------------------------------------------------------C C
R
×V
(T , I )
THJ – C
CESAT ( MAX ) C C
2/14
Test Conditions
Min.
Typ.
Max.
600
Unit
V
5
2.0
1.8
10
1
µA
mA
±100
nA
7
V
2.5
V
V
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
g fs (1)
Parameter
Forward Transconductance
Test Conditions
Min.
VCE = 15 V , IC = 7 A
Cies
Input Capacitance
VCE = 25 V, f= 1 MHz, VGE = 0
Coes
Output Capacitance
Cres
Reverse Transfer
Capacitance
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 390 V, IC = 7 A,
VGE = 15 V
(see Figure 21)
tscw
Short Circuit Withstand Time
VCE = 0.5 VBR(CES),Tj = 125°C,
RG = 10 Ω, VGE = 12 V
Typ.
Max.
Unit
3
S
760
pF
86
pF
15.5
pF
34.4
8.1
16.4
nC
nC
nC
10
µs
Table 7: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
VCC = 390 V, IC = 7 A
RG = 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 19)
22.5
8.5
700
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
VCC = 390 V, IC = 7 A
RG = 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)
22
9.5
680
ns
ns
A/µs
Table 8: Switching Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
td(off)
tf
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Vcc = 390 V, IC = 7 A,
RGE = 10 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 19)
60
116
75
ns
ns
ns
tr(Voff)
td(off)
tf
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Vcc = 390 V, IC = 7 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 19)
24
196
144
ns
ns
ns
Table 9: Switching Energy
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
VCC = 390 V, IC = 7 A
RG = 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 19)
82
155
237
µJ
µJ
µJ
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
VCC = 390 V, IC = 7 A
RG = 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)
131
370
501
µJ
µJ
µJ
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3)Turn-off losses include also the tail of the collector current.
3/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
Table 10: Collector-Emitter Diode
Symbol
Parameter
Test Condiction
Forward On-Voltage
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
Vf
4/14
Typ.
Max.
Unit
If = 3.5 A
If = 3.5 A, Tj = 125 °C
1.3
1.1
1.9
V
V
If = 7 A, VR = 40 V,
Tj = 25 °C, di/dt = 100 A/µs
37
22
40
2.1
0.68
ns
ns
nC
A
If = 7 A, VR = 40 V,
Tj = 125 °C, di/dt = 100 A/µs
61
34
98
3.2
0.79
ns
ns
nC
A
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Min.
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Normalized Gate Threshold vs Temperature
5/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temperature
Figure 11: Total Switching Losses vs Gate Resistance
Figure 14: Total Switching Losses vs Collector
Current
6/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
Figure 15: Thermal Impedance For TO-220/
D²PAK
Figure 17: Turn-Off SOA
Figure 16: Thermal Impedance For TO-220FP
Figure
18:
Characteristics
Emitter-Collector
Diode
7/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
Figure 19: Test Circuit for Inductive Load
Switching
Figure 21: Gate Charge Test Circuit
Figure 20: Switching Waveforms
Figure 22: Diode Recovery Times Waveform
8/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
E1
0.368
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
R
0º
0.126
0.015
4º
3
V2
0.4
1
9/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
10/14
L5
1 2 3
L4
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
11/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MIN.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
0.063
D
1.5
1.6
0.059
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
0.456
F
11.4
11.6
0.449
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
T
0.25
0.35
W
23.7
24.3
* on sales type
12/14
inch
MAX.
1.574
0.0098 0.0137
0.933
0.956
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
Table 11: Revision History
Date
Revision
14-Jun-2005
22-Jul-2005
1
2
Description of Changes
New release
Complete version
13/14
STGP14NC60KD - STGF14NC60KD - STGB14NC60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
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