STMICROELECTRONICS STGD6NC60HDT4

STGD6NC60HD
N-CHANNEL 6A - 600V DPAK
Very Fast PowerMESH™ IGBT
TARGET SPECIFICATION
Table 1: General Features
TYPE
VCES
STGD6NC60HDT4
600 V
■
■
■
■
■
■
■
Figure 1: Package
VCE(sat)
IC
(Max) @25°C @100°C
< 2.5 V
6A
LOWER ON-VOLTAGE DROP (Vcesat)
OFF LOSSES INCLUDE TAIL CURRENT
LOSSES INCLUDE DIODE RECOVERY
ENERGY
LOWER CRES/CIES RATIO
HIGH FREQUENCY OPERATION
VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
3
1
DPAK
Figure 2: Internal Schematic Diagram
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) mantaining a low voltage drop.
APPLICATIONS
HIGH FREQUENCY INVERTERS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS
■
Table 2: Order Code
PART NUMBER
MARKING
PACKAGE
PACKAGING
STGD6NC60HDT4
GD6NC60HD
DPAK
TAPE & REEL
Rev. 1
June 2005
This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice
1/9
STGD6NC60HD
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC = 25°C (#)
10
A
IC
Collector Current (continuous) at TC = 100°C (#)
6
A
Collector Current (pulsed)
24
A
ICM ()
IF
PTOT
Diode RMS Forward Current at TC = 25°C
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Tj
Storage Temperature
Operating Junction Temperature
TBD
A
50
W
0.40
W/°C
– 55 to 150
°C
() Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
TL
Maximum Lead Temperature for Soldering Purpose (1.6 mm from
case, for 10 sec.)
Typ.
Max.
2.5
°C/W
100
°C/W
275
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters
Symbol
Parameter
Collector-Emitter Breakdown
Voltage
IC = 1 mA, VGE = 0
ICES
Collector cut-off Current
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250 µA
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tc= 125°C
VBR(CES)
(#) Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = -------------------------------------------------------------------------------------------------C C
R
×V
(T , I )
THJ – C
CESAT ( M AX ) C C
2/9
Test Conditions
Min.
Typ.
Max.
600
Unit
V
3.75
1.9
1.7
10
1
µA
mA
±100
nA
5.75
V
2.5
V
V
STGD6NC60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
gfs (1)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward Transconductance
VCE = 15 V , IC = 3 A
TBD
S
Cies
Input Capacitance
VCE = 25 V, f= 1 MHz, VGE = 0
320
pF
Coes
Output Capacitance
28
pF
Cres
Reverse Transfer
Capacitance
7.2
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 390 V, IC = 3 A,
VGE = 15 V
(see Figure 5)
ICL
Turn-Off SOA Minimum
Current
Vclamp = 480 V , Tj = 150°C
RG = 10 Ω, VGE = 15 V
15
TBD
TBD
TBD
TBD
nC
nC
nC
A
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
VCC = 390 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 3)
TBD
TBD
TBD
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
VCC = 390 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 3)
TBD
TBD
TBD
ns
ns
A/µs
Table 8: Switching Off
Symbol
Parameter
tr(Voff)
Off Voltage Rise Time
td(off)
Turn-off Delay Time
tf
tr(Voff)
td(off)
tf
Current Fall Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Test Conditions
Min.
Typ.
Max.
Unit
Vcc = 390 V, IC = 3 A,
RG = 10 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 3)
TBD
ns
TBD
ns
70
ns
Vcc = 390 V, IC = 3 A,
RG = 10 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 3)
TBD
ns
TBD
ns
TBD
ns
Table 9: Switching Energy
Symbol
Parameter
Test Conditions
Min.
Typ.
Max
Unit
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 390 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 3)
TBD
TBD
TBD
µJ
µJ
µJ
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 390 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 3)
TBD
TBD
TBD
µJ
µJ
µJ
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current.
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STGD6NC60HD
Table 10: Collector-Emitter Diode
Symbol
4/9
Parameter
Test Condiction
Vf
Forward On-Voltage
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Min.
Typ.
Max.
Unit
If = 1.5 A
If = 1.5 A, Tj = 125 °C
1.6
1.3
2.1
V
V
If = 1.5 A, VR = 40 V,
Tj = 25 °C, di/dt = 100 A/µs
(see Figure 6)
TBD
TBD
TBD
TBD
TBD
ns
ns
nC
A
If = 1.5 A, VR = 40 V,
Tj = 125 °C, di/dt = 100 A/µs
(see Figure 6)
TBD
TBD
TBD
TBD
TBD
ns
ns
nC
A
STGD6NC60HD
Figure 3: Test Circuit for Inductive Load
Switching
Figure 5: Gate Charge Test Circuit
Figure 4: Switching Waveforms
Figure 6: Diode Recovery Time Waveforms
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STGD6NC60HD
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
L2
L4
V2
0.8
0.60
0
o
0.398
0.031
1.00
8
o
0.024
0
o
0.039
0o
P032P_B
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STGD6NC60HD
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
D1
1.5
E
1.65
MIN.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059
F
R
MIN.
MAX.
K0
W
inch
MAX.
1.574
16.3
0.618
0.641
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STGD6NC60HD
Table 11: Revision History
8/9
Date
Revision
14-Jun-2005
1
Description of Changes
First release
STGD6NC60HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2005 STMicroelectronics - All Rights Reserved
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