STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH™ IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD6NC60HDT4 600 V ■ ■ ■ ■ ■ ■ ■ Figure 1: Package VCE(sat) IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION 3 1 DPAK Figure 2: Internal Schematic Diagram DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS HIGH FREQUENCY INVERTERS ■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ MOTOR DRIVERS ■ Table 2: Order Code PART NUMBER MARKING PACKAGE PACKAGING STGD6NC60HDT4 GD6NC60HD DPAK TAPE & REEL Rev. 1 June 2005 This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice 1/9 STGD6NC60HD Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C (#) 10 A IC Collector Current (continuous) at TC = 100°C (#) 6 A Collector Current (pulsed) 24 A ICM () IF PTOT Diode RMS Forward Current at TC = 25°C Total Dissipation at TC = 25°C Derating Factor Tstg Tj Storage Temperature Operating Junction Temperature TBD A 50 W 0.40 W/°C – 55 to 150 °C () Pulse width limited by max. junction temperature. Table 4: Thermal Data Min. Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient TL Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) Typ. Max. 2.5 °C/W 100 °C/W 275 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Main Parameters Symbol Parameter Collector-Emitter Breakdown Voltage IC = 1 mA, VGE = 0 ICES Collector cut-off Current (VGE = 0) VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tc= 125°C VBR(CES) (#) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( M AX ) C C 2/9 Test Conditions Min. Typ. Max. 600 Unit V 3.75 1.9 1.7 10 1 µA mA ±100 nA 5.75 V 2.5 V V STGD6NC60HD ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (1) Parameter Test Conditions Min. Typ. Max. Unit Forward Transconductance VCE = 15 V , IC = 3 A TBD S Cies Input Capacitance VCE = 25 V, f= 1 MHz, VGE = 0 320 pF Coes Output Capacitance 28 pF Cres Reverse Transfer Capacitance 7.2 pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390 V, IC = 3 A, VGE = 15 V (see Figure 5) ICL Turn-Off SOA Minimum Current Vclamp = 480 V , Tj = 150°C RG = 10 Ω, VGE = 15 V 15 TBD TBD TBD TBD nC nC nC A (1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5% Table 7: Switching On Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Current Slope VCC = 390 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 25°C (see Figure 3) TBD TBD TBD ns ns A/µs td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Current Slope VCC = 390 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 3) TBD TBD TBD ns ns A/µs Table 8: Switching Off Symbol Parameter tr(Voff) Off Voltage Rise Time td(off) Turn-off Delay Time tf tr(Voff) td(off) tf Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions Min. Typ. Max. Unit Vcc = 390 V, IC = 3 A, RG = 10 Ω , VGE = 15 V TJ = 25 °C (see Figure 3) TBD ns TBD ns 70 ns Vcc = 390 V, IC = 3 A, RG = 10 Ω , VGE = 15 V Tj = 125 °C (see Figure 3) TBD ns TBD ns TBD ns Table 9: Switching Energy Symbol Parameter Test Conditions Min. Typ. Max Unit Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 390 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 25°C (see Figure 3) TBD TBD TBD µJ µJ µJ Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 390 V, IC = 3 A RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 3) TBD TBD TBD µJ µJ µJ (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C) (3) Turn-off losses include also the tail of the collector current. 3/9 STGD6NC60HD Table 10: Collector-Emitter Diode Symbol 4/9 Parameter Test Condiction Vf Forward On-Voltage trr ta Qrr Irrm S Reverse Recovery Time trr ta Qrr Irrm S Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Min. Typ. Max. Unit If = 1.5 A If = 1.5 A, Tj = 125 °C 1.6 1.3 2.1 V V If = 1.5 A, VR = 40 V, Tj = 25 °C, di/dt = 100 A/µs (see Figure 6) TBD TBD TBD TBD TBD ns ns nC A If = 1.5 A, VR = 40 V, Tj = 125 °C, di/dt = 100 A/µs (see Figure 6) TBD TBD TBD TBD TBD ns ns nC A STGD6NC60HD Figure 3: Test Circuit for Inductive Load Switching Figure 5: Gate Charge Test Circuit Figure 4: Switching Waveforms Figure 6: Diode Recovery Time Waveforms 5/9 STGD6NC60HD TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 L2 L4 V2 0.8 0.60 0 o 0.398 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 6/9 STGD6NC60HD DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 7/9 STGD6NC60HD Table 11: Revision History 8/9 Date Revision 14-Jun-2005 1 Description of Changes First release STGD6NC60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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