STL24NM60N N-channel 600 V, 0.200 Ω, 16 A PowerFLAT™ 8x8 HV MDmesh™ II Power MOSFET Features Type VDSS @ TJmax RDS(on) max ID STL24NM60N 650 V < 0.215 Ω 16 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 0OWER&,!4X(6 Applications ■ Switching applications Description Figure 1. This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STL24NM60N 24NM60N PowerFLAT™ 8x8 HV Tape and reel November 2011 Doc ID 18363 Rev 2 1/14 www.st.com 14 Contents STL24NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/14 .............................................. 6 Doc ID 18363 Rev 2 STL24NM60N 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V Drain current (continuous) at TC = 25 °C 16 A ID (1) ID (1) Drain current (continuous) at TC = 100 °C 10 A ID (2) Drain current (continuous) at Tamb = 25 °C 3.3 A ID (2) Drain current (continuous) at Tamb = 100 °C 1.5 A Drain current (pulsed) 13.2 A 3 W 125 W IDM (2),(3) PTOT (2) Total dissipation at Tamb = 25 °C PTOT(1) Total dissipation at TC = 25 °C IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 4 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 300 mJ Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C Value Unit dv/dt (4) Tstg Tj Storage temperature Max. operating junction temperature 1. The value is rated according to Rthj-case 2. When mounted on FR-4 board of inch², 2oz Cu 3. Pulse width limited by safe operating area 4. ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max 1 °C/W Rthj-amb(1) Thermal resistance junction-amb max 45 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 18363 Rev 2 3/14 Electrical characteristics 2 STL24NM60N Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 4 5 V 0.2 0.215 Ω Min. Typ. Max. Unit VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 8 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1400 44 7.4 - pF pF pF Output equivalent capacitance VDS = 0 to 480 V, VGS = 0 - 190 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 16 A, VGS = 10 V (see Figure 3) - 46 7 23 - nC nC nC Ciss Coss Crss Coss eq.(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. Table 6. Symbol td(off) tr tc tf 4/14 Switching times Parameter Turn-off delay time Rise time Cross time Fall time Test conditions VDD = 300 V, ID = 8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 4) Doc ID 18363 Rev 2 Min. Typ. - 11.5 16.5 73 37 Max Unit - ns ns ns ns STL24NM60N Electrical characteristics Table 7. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Test conditions Min. Typ. Max. Unit - 16 64 A A ISD = 16 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16 A, di/dt = 100 A/µs VDD = 100 V (see Figure 4) - 340 4.6 27 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 4) - 4.4 5.7 28 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 18363 Rev 2 5/14 Test circuits STL24NM60N 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 4. AM01469v1 Test circuit for inductive load Figure 5. switching and diode recovery times A A D.U.T. FAST DIODE B B Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 6. Unclamped inductive waveform AM01471v1 Figure 7. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 6/14 0 Doc ID 18363 Rev 2 10% AM01473v1 STL24NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 18363 Rev 2 7/14 Package mechanical data Table 8. STL24NM60N PowerFLAT™ 8x8 HV mechanical data mm Dim. Min. Typ. Max. A 0.80 0.90 1.00 A1 0.00 0.02 0.05 b 0.95 1.00 1.05 D 8.00 E 8.00 D2 7.05 7.20 7.30 E2 4.15 4.30 4.40 e L 8/14 2.00 0.40 0.50 aaa 0.10 bbb 0.10 ccc 0.10 Doc ID 18363 Rev 2 0.60 STL24NM60N Package mechanical data Figure 8. PowerFLAT™ 8x8 HV drawing mechanical data BOTTOM VIEW b CA B L bbb 0.40 E2 PIN#1 ID D2 C A ccc C A1 0.20±0.008 SIDE VIEW SEATING PLANE 0.08 C D A B E INDEX AREA aaa C TOP VIEW aaa C 8222871_Rev_B Doc ID 18363 Rev 2 9/14 Package mechanical data Figure 9. STL24NM60N PowerFLAT™ 8x8 HV recommended footprint (1) 0.60 7.70 4.40 7.30 2.00 1.05 Footprint 1. All dimensions are in mm 10/14 Doc ID 18363 Rev 2 STL24NM60N Packaging mechanical data Figure 10. PowerFLAT™ 8x8 HV tape P2 (2.0±0.1) T (0.30±0.05) P0 (4.0±0.1) D0 ( 1.55±0.05) D1 ( 1.5 Min) P1 (12.00±0.1) W (16.00±0.3) F (7.50±0.1) E (1.75±0.1) B0 (8.30±0.1) 5 Packaging mechanical data A0 (8.30±0.1) K0 (1.10±0.1) Note: Base and Bulk quantity 3000 pcs 8229819_Tape_revA Figure 11. PowerFLAT™ 8x8 HV package orientation in carrier tape Doc ID 18363 Rev 2 11/14 Packaging mechanical data STL24NM60N Figure 12. PowerFLAT™ 8x8 HV reel 8229819_Reel_revA 12/14 Doc ID 18363 Rev 2 STL24NM60N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 05-Jan-2011 1 First release. 10-Nov-2011 2 Section 4: Package mechanical data has been updated. Minor text changes. Doc ID 18363 Rev 2 13/14 STL24NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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