STL150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT™ (6x5) STripFET™ V Power MOSFET Features Type VDSS STL150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses PowerFLAT™ ( 6x5 ) Application ■ Switching applications Figure 1. Description Internal schematic diagram This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Order code Marking Package Packaging STL150N3LLH5 150N3LLH5 PowerFLAT™ (6x5) Tape and reel June 2009 Doc ID 14092 Rev 4 1/12 www.st.com 12 Contents STL150N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 14092 Rev 4 STL150N3LLH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ± 22 V ID(1) Drain current (continuous) at TC = 25 °C 150 A ID (1) Drain current (continuous) at TC = 100 °C 94 A ID(2) Drain current (continuous) at TC = 25 °C 35 A (3) Drain current (continuous) at TC=100 °C 21.8 A (3) Drain current (pulsed) 140 A PTOT (1) Total dissipation at TC = 25 °C 80 W (3) Total dissipation at TC = 25 °C 4 W 0.03 W/°C -55 to 150 °C ID IDM PTOT Derating factor TJ Operating junction temperature Storage temperature Tstg 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 1.56 °C/W Thermal resistance junction-ambient 31.3 °C/W Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Table 4. Symbol Avalanche data Parameter IAV Not-repetitive avalanche current, (pulse width limited by Tj Max) 17 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 24 V) 300 mJ Doc ID 14092 Rev 4 3/12 Electrical characteristics 2 STL150N3LLH5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±22 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 17.5 A Symbol Ciss Coss Crss Qg Parameter Input capacitance Output capacitance Reverse transfer capacitance Qgd RG Gate input resistance Table 7. Symbol td(on) tr td(off) tf Typ. Max. 30 Unit V VDS = Max rating @125 °C 1 1.55 1 10 µA µA ±100 nA 2.2 V 0.0014 0.00175 0.0019 0.0024 VGS= 4.5 V, ID= 17.5 A Ω Ω Dynamic Total gate charge Gate-source charge Gate-drain charge Qgs Min. VDS = Max rating, IDSS Table 6. 4/12 On/off states Test conditions VDS = 25 V, f=1 MHz, VGS=0 Min. Typ. Max. Unit - 5800 1147 127 - pF pF pF - 40 13.4 14.9 - nC nC nC - 1.1 - Ω VDD=15 V, ID = 35 A VGS =4.5 V (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. - 17.2 30.8 65.8 47.8 VDD=15 V, ID= 17.5 A, RG=4.7 Ω, VGS=10 V (see Figure 13) Doc ID 14092 Rev 4 Max. Unit - ns ns ns ns STL150N3LLH5 Electrical characteristics Table 8. Symbol ISD Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 35 A ISDM(1) Source-drain current (pulsed) - 140 A VSD(2) Forward on voltage ISD = 35 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, trr Qrr IRRM di/dt = 100 A/µs, VDD= 25 V - 43.8 46 2.1 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 14092 Rev 4 5/12 Electrical characteristics STL150N3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Thermal impedance HV42710 ID(A) a is are n) his S(o n t RD n o ax io m t era by Op ited lim 100 Figure 3. TJ = 150 °C TC = 25 °C Single pulse 10 ms 10 100 ms 1 1s 0.1 0.01 0.1 1 VDS(V) 10 Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance HV42790 BVDSS HV42770 RDS(on) (mΩ) (norm) 1.1 2.5 1.05 2.0 1 1.5 0.95 1.0 0.9 0.5 0.85 -55 6/12 -30 -5 20 45 70 95 120 145 TJ(°C) Doc ID 14092 Rev 4 0 10 20 30 ID(A) STL150N3LLH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. HV42730 VGS(V) Capacitance variations HV42760 C(pF) f=1MHz VDD=15 V VGS=5 V ID=34 A 12 10 10000 8000 8 Ciss 6000 6 4 4000 2 2000 Coss Crss 0 0 20 0 40 60 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature HV42740 VGS(th) (norm) 10 0 20 VDS(V) Figure 11. Normalized on resistance vs temperature HV42750 RDS(on) (norm) ID=250µA 1.2 1.6 1 1.4 0.8 1.2 0.6 1 0.4 0.8 0.2 -55 -30 -5 20 45 70 95 120 145 TJ (°C) 0.6 -55 ID=17 A VGS=10 V -30 -5 20 45 70 95 120 145 TJ(°C) Figure 12. Source-drain diode forward characteristics HV42780 VSD(V) 0.8 TJ=-55°C 0.7 TJ=25°C 0.6 0.5 TJ=175°C 0.4 0.3 0 10 20 30 ID(A) Doc ID 14092 Rev 4 7/12 Test circuits 3 STL150N3LLH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform Doc ID 14092 Rev 4 STL150N3LLH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 14092 Rev 4 9/12 Package mechanical data STL150N3LLH5 PowerFLAT™(6x5) mechanical data mm. DIM. Min. A Min. 0.031 0.83 0.93 0.02 0.05 A3 0.20 0.35 D D2 0.40 0.47 0.013 4.20 0.32 0.036 0.0007 0.0019 0.015 0.163 0.165 E 6.00 0.236 5.75 0.226 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 0.70 0.80 L 0.018 0.187 4.25 E1 e Max. 0.196 4.75 4.15 Typ. 0.007 5.00 D1 10/12 inch Max. A1 b 0.80 Typ. 0.135 1.27 0.167 0.137 0.139 0.103 0.105 0.050 0.90 Doc ID 14092 Rev 4 0.027 0.031 0.035 STL150N3LLH5 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 22-Oct-2007 1 First release 01-Apr-2008 2 Document status promoted from preliminary data to datasheet 23-Sep-2008 3 VGS value has been changed on Table 2 and Table 5 12-Jun-2009 4 VGS(th) value has been changed on Table 5 Doc ID 14092 Rev 4 11/12 STL150N3LLH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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