STMICROELECTRONICS STL150N3LLH5_09

STL150N3LLH5
N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT™ (6x5)
STripFET™ V Power MOSFET
Features
Type
VDSS
STL150N3LLH5
30 V
RDS(on)
max
ID
<0.00175 Ω 35 A (1)
1. The value is rated according Rthj-pcb
■
RDS(on) * Qg industry benchmark
■
Extremely low on-resistance RDS(on)
■
High avalanche ruggedness
■
Low gate drive power losses
PowerFLAT™ ( 6x5 )
Application
■
Switching applications
Figure 1.
Description
Internal schematic diagram
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STL150N3LLH5
150N3LLH5
PowerFLAT™ (6x5)
Tape and reel
June 2009
Doc ID 14092 Rev 4
1/12
www.st.com
12
Contents
STL150N3LLH5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 8
Doc ID 14092 Rev 4
STL150N3LLH5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
30
V
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
± 22
V
ID(1)
Drain current (continuous) at TC = 25 °C
150
A
ID (1)
Drain current (continuous) at TC = 100 °C
94
A
ID(2)
Drain current (continuous) at TC = 25 °C
35
A
(3)
Drain current (continuous) at TC=100 °C
21.8
A
(3)
Drain current (pulsed)
140
A
PTOT (1)
Total dissipation at TC = 25 °C
80
W
(3)
Total dissipation at TC = 25 °C
4
W
0.03
W/°C
-55 to 150
°C
ID
IDM
PTOT
Derating factor
TJ
Operating junction temperature
Storage temperature
Tstg
1. The value is rated according Rthj-c
2. The value is rated according Rthj-pcb
3. Pulse width limited by safe operating area
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (drain) (steady state)
1.56
°C/W
Thermal resistance junction-ambient
31.3
°C/W
Value
Unit
Rthj-pcb
(1)
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4.
Symbol
Avalanche data
Parameter
IAV
Not-repetitive avalanche current,
(pulse width limited by Tj Max)
17
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV , VDD = 24 V)
300
mJ
Doc ID 14092 Rev 4
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Electrical characteristics
2
STL150N3LLH5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±22 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 17.5 A
Symbol
Ciss
Coss
Crss
Qg
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Qgd
RG
Gate input resistance
Table 7.
Symbol
td(on)
tr
td(off)
tf
Typ.
Max.
30
Unit
V
VDS = Max rating @125 °C
1
1.55
1
10
µA
µA
±100
nA
2.2
V
0.0014 0.00175
0.0019 0.0024
VGS= 4.5 V, ID= 17.5 A
Ω
Ω
Dynamic
Total gate charge
Gate-source charge
Gate-drain charge
Qgs
Min.
VDS = Max rating,
IDSS
Table 6.
4/12
On/off states
Test conditions
VDS = 25 V, f=1 MHz,
VGS=0
Min.
Typ.
Max.
Unit
-
5800
1147
127
-
pF
pF
pF
-
40
13.4
14.9
-
nC
nC
nC
-
1.1
-
Ω
VDD=15 V, ID = 35 A
VGS =4.5 V
(see Figure 14)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
-
17.2
30.8
65.8
47.8
VDD=15 V, ID= 17.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Doc ID 14092 Rev 4
Max.
Unit
-
ns
ns
ns
ns
STL150N3LLH5
Electrical characteristics
Table 8.
Symbol
ISD
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
35
A
ISDM(1)
Source-drain current (pulsed)
-
140
A
VSD(2)
Forward on voltage
ISD = 35 A, VGS=0
-
1.1
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A,
trr
Qrr
IRRM
di/dt = 100 A/µs,
VDD= 25 V
-
43.8
46
2.1
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
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Electrical characteristics
STL150N3LLH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Thermal impedance
HV42710
ID(A)
a is
are n)
his S(o
n t RD
n o ax
io
m
t
era by
Op ited
lim
100
Figure 3.
TJ = 150 °C
TC = 25 °C
Single pulse
10 ms
10
100 ms
1
1s
0.1
0.01
0.1
1
VDS(V)
10
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
Static drain-source on resistance
HV42790
BVDSS
HV42770
RDS(on)
(mΩ)
(norm)
1.1
2.5
1.05
2.0
1
1.5
0.95
1.0
0.9
0.5
0.85
-55
6/12
-30
-5
20
45
70
95
120
145
TJ(°C)
Doc ID 14092 Rev 4
0
10
20
30
ID(A)
STL150N3LLH5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
HV42730
VGS(V)
Capacitance variations
HV42760
C(pF)
f=1MHz
VDD=15 V
VGS=5 V
ID=34 A
12
10
10000
8000
8
Ciss
6000
6
4
4000
2
2000
Coss
Crss
0
0
20
0
40
60
Qg(nC)
Figure 10. Normalized gate threshold voltage
vs temperature
HV42740
VGS(th)
(norm)
10
0
20
VDS(V)
Figure 11. Normalized on resistance vs
temperature
HV42750
RDS(on)
(norm)
ID=250µA
1.2
1.6
1
1.4
0.8
1.2
0.6
1
0.4
0.8
0.2
-55
-30
-5
20
45
70
95
120
145 TJ (°C)
0.6
-55
ID=17 A
VGS=10 V
-30
-5
20
45
70
95
120 145 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
HV42780
VSD(V)
0.8
TJ=-55°C
0.7
TJ=25°C
0.6
0.5
TJ=175°C
0.4
0.3
0
10
20
30
ID(A)
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Test circuits
3
STL150N3LLH5
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/12
Figure 18. Switching time waveform
Doc ID 14092 Rev 4
STL150N3LLH5
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 14092 Rev 4
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Package mechanical data
STL150N3LLH5
PowerFLAT™(6x5) mechanical data
mm.
DIM.
Min.
A
Min.
0.031
0.83
0.93
0.02
0.05
A3
0.20
0.35
D
D2
0.40
0.47
0.013
4.20
0.32
0.036
0.0007
0.0019
0.015
0.163
0.165
E
6.00
0.236
5.75
0.226
E2
3.43
3.48
3.53
E4
2.58
2.63
2.68
0.70
0.80
L
0.018
0.187
4.25
E1
e
Max.
0.196
4.75
4.15
Typ.
0.007
5.00
D1
10/12
inch
Max.
A1
b
0.80
Typ.
0.135
1.27
0.167
0.137
0.139
0.103
0.105
0.050
0.90
Doc ID 14092 Rev 4
0.027
0.031
0.035
STL150N3LLH5
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
22-Oct-2007
1
First release
01-Apr-2008
2
Document status promoted from preliminary data to datasheet
23-Sep-2008
3
VGS value has been changed on Table 2 and Table 5
12-Jun-2009
4
VGS(th) value has been changed on Table 5
Doc ID 14092 Rev 4
11/12
STL150N3LLH5
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Doc ID 14092 Rev 4