STL36N55M5 N-channel 550 V, 0.066 Ω typ., 22.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet — production data Features Order code VDS @ TJmax RDS(on) max ID STL36N55M5 600 V 0.090 Ω 22.5 A(1) 3 3 3 ' $ 1. The value is rated according to Rthj-case and limited by package. ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance "OTTOMVIEW 0OWER&,!4X(6 Applications ■ Switching applications Figure 1. Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STL36N55M5 36N55M5 PowerFLAT™ 8x8 HV Tape and reel January 2013 This is information on a product in full production. Doc ID 022602 Rev 3 1/17 www.st.com 17 Contents STL36N55M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 022602 Rev 3 STL36N55M5 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage 550 V VGS Gate-source voltage ± 25 V Drain current (continuous) at TC = 25 °C 22.5 A ID (1) ID (1) Drain current (continuous) at TC = 100 °C 17 A (1),(2) Drain current (pulsed) 90 A ID (3) Drain current (continuous) at Tamb = 25 °C 3.7 A ID (3) Drain current (continuous) at Tamb = 100 °C 2.2 A Total dissipation at Tamb = 25 °C 2.8 W Total dissipation at TC = 25 °C 150 W 7 A IDM PTOT (3) PTOT (1) IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 510 mJ Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.83 °C/W 45 °C/W dv/dt (4) Tstg Tj Storage temperature Max. operating junction temperature 1. The value is rated according to Rthj-case and limited by package.. 2. Pulse width limited by safe operating area. 3. When mounted on FR-4 board of inch², 2oz Cu. 4. ISD ≤ 22.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 340 V. Table 3. Symbol Rthj-case Rthj-amb(1) Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max 1. When mounted on FR-4 board of inch², 2oz Cu. Doc ID 022602 Rev 3 3/17 Electrical characteristics 2 STL36N55M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 550 V IDSS Zero gate voltage VDS = 550 V drain current (VGS = 0) VDS = 550 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 4 5 V 0.066 0.090 Ω Min. Typ. Max. Unit - 2670 75 6.6 - pF pF pF - 71 - pF - 192 - pF - 1.85 - Ω - 62 15 27 - nC nC nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 16.5 A resistance Table 5. Symbol Dynamic Parameter Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Co(er)(1) Equivalent output capacitance energy related Co(tr)(2) 3 Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 440 V Equivalent output capacitance time related RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 440 V, ID = 16.5 A, VGS = 10 V (see Figure 16) 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/17 Doc ID 022602 Rev 3 STL36N55M5 Electrical characteristics Table 6. Symbol td(V) tr(V) tf(i) tc(off) Table 7. Symbol Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 22 A, RG = 4.7 Ω, VGS = 10 V (see Figure 20) Parameter Test conditions Source-drain current ISDM(1),(2) Source-drain current (pulsed) trr Qrr IRRM trr Qrr IRRM Typ. - 56 13 13 17 Max Unit - ns ns ns ns Source drain diode ISD (1) VSD (3) Min. Min. Typ. Max. Unit - 22.5 90 A A 1.5 V Forward on voltage ISD = 22.5 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22.5 A, di/dt = 100 A/µs VDD = 100 V (see Figure 17) - 292 4.2 29 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 17) - 364 6 33 ns µC A 1. The value is rated according to Rthj-case and limited by package.. 2. Pulse width limited by safe operating area 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022602 Rev 3 5/17 Electrical characteristics STL36N55M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM14937v1 ID (A) Zth PowerFLAT 8x8 HV K (o n ) δ=0.5 DS Op Lim era ite tion d by in th ma i s a x R re a is Tj=150°C Tc=25°C Single pulse 10 0.2 10µs 0.1 100µs -1 10 0.05 0.02 1 1ms 0.01 Single pulse 10ms -2 0.1 0.1 Figure 4. 10 1 100 10 -5 10 VDS(V) Output characteristics -4 Figure 5. -2 -3 10 tp (s) 10 10 Transfer characteristics AM14930v1 ID (A) AM14931v1 ID (A) VGS=9, 10V 8V 70 VDS=25V 70 7V 60 60 50 50 40 40 30 30 6V 20 20 10 10 0 0 Figure 6. 5 10 15 0 20 25 VDS(V) 3 Gate charge vs gate-source voltage Figure 7. AM14932v1 VDS(V) VGS (V) VDS 12 VDD=440V ID=16.5A 10 6 7 8 VGS(V) 9 Static drain-source on-resistance AM14933v2 0.071 400 0.069 300 8 5 RDS(on) (Ω) 450 350 4 VGS=10V 0.067 0.065 250 6 200 4 2 0 0 6/17 10 20 30 40 50 60 0.063 150 0.061 100 0.059 50 0.057 0 70 Qg(nC) 0.055 0 Doc ID 022602 Rev 3 5 10 15 20 ID(A) STL36N55M5 Figure 8. Electrical characteristics Capacitance variations Figure 9. AM14934v1 C (pF) Output capacitance stored energy AM14935v1 Eoss (µJ) 10 10000 Ciss 8 1000 6 100 10 1 0.1 1 100 10 Coss 4 Crss 2 Figure 10. Normalized gate threshold voltage vs temperature AM05459v3 VGS(th) (norm) 1.10 0 0 VDS(V) ID=250µA 200 100 300 400 500 VDS(V) Figure 11. Normalized on-resistance vs temperature AM05460v3 RDS(on) (norm) 2.1 VGS=10V ID=16.5V 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.80 0.9 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics 0 25 50 75 100 TJ(°C) Figure 13. Normalized BVDSS vs temperature AM05461v3 VSD (V) 0.5 -50 -25 AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 Doc ID 022602 Rev 3 0 25 50 75 100 TJ(°C) 7/17 Electrical characteristics STL36N55M5 Figure 14. Switching losses vs gate resistance (1) E (μJ) 600 AM14936v1 ID=22A VDD=400V VGS=10V Eon 500 400 300 Eoff 200 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/17 Doc ID 022602 Rev 3 STL36N55M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 20. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 022602 Rev 3 Tfall Tcross --over AM05540v2 9/17 Package mechanical data 4 STL36N55M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 022602 Rev 3 STL36N55M5 Package mechanical data Table 8. PowerFLAT™ 8x8 HV mechanical data mm Dim. Min. Typ. Max. A 0.80 0.90 1.00 A1 0.00 0.02 0.05 b 0.95 1.00 1.05 D 8.00 E 8.00 D2 7.05 7.20 7.30 E2 4.15 4.30 4.40 e L 2.00 0.40 0.50 aaa 0.10 bbb 0.10 ccc 0.10 Doc ID 022602 Rev 3 0.60 11/17 Package mechanical data STL36N55M5 Figure 21. PowerFLAT™ 8x8 HV drawing mechanical data BOTTOM VIEW b CA B L bbb 0.40 E2 PIN#1 ID D2 C A ccc C A1 0.20±0.008 SIDE VIEW SEATING PLANE 0.08 C D A B E INDEX AREA aaa C TOP VIEW aaa C 8222871_Rev_B 12/17 Doc ID 022602 Rev 3 STL36N55M5 Package mechanical data Figure 22. PowerFLAT™ 8x8 HV recommended footprint 0.60 7.70 4.40 7.30 2.00 1.05 Footprint Doc ID 022602 Rev 3 13/17 Packaging mechanical data 5 STL36N55M5 Packaging mechanical data Figure 23. PowerFLAT™ 8x8 HV tape P2 (2.0±0.1) T (0.30±0.05) P0 (4.0±0.1) D0 ( 1.55±0.05) D1 ( 1.5 Min) P1 (12.00±0.1) W (16.00±0.3) F (7.50±0.1) B0 (8.30±0.1) E (1.75±0.1) A0 (8.30±0.1) K0 (1.10±0.1) Note: Base and Bulk quantity 3000 pcs 8229819_Tape_revA Figure 24. PowerFLAT™ 8x8 HV package orientation in carrier tape. 14/17 Doc ID 022602 Rev 3 STL36N55M5 Packaging mechanical data Figure 25. PowerFLAT™ 8x8 HV reel 8229819_Reel_revA Doc ID 022602 Rev 3 15/17 Revision history 6 STL36N55M5 Revision history Table 9. Document revision history Date Revision 14-Dec-2011 1 First release. 17-Oct-2012 2 Updated: Table 5, 6 and 7 typ. values 3 – Modified: Figure 1, 4 and 6 – Document status promoted from preliminary data to production data – Modified: VDD on Table 5 – Minor text changes 24-Jan-2013 16/17 Changes Doc ID 022602 Rev 3 STL36N55M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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