STMICROELECTRONICS STL150N3LLH5_08

STL150N3LLH5
N-channel 30 V, 0.0014 Ω, 35 A - PowerFLAT™ (6x5)
STripFET™ V Power MOSFET
Features
Type
VDSS
STL150N3LLH5
30 V
RDS(on)
max
ID
<0.00175 Ω 35 A (1)
1. The value is rated according Rthj-pcb
■
RDS(on) * Qg industry benchmark
■
Extremely low on-resistance RDS(on)
■
High avalanche ruggedness
■
Low gate drive power losses
PowerFLAT™ ( 6x5 )
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STL150N3LLH5
150N3LLH5
PowerFLAT™ (6x5)
Tape and reel
September 2008
Rev 3
1/12
www.st.com
12
Contents
STL150N3LLH5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 8
STL150N3LLH5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
30
V
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
± 22
V
ID(1)
Drain current (continuous) at TC = 25 °C
150
A
ID (1)
Drain current (continuous) at TC = 100 °C
94
A
ID(2)
Drain current (continuous) at TC = 25 °C
35
A
(3)
Drain current (continuous) at TC=100 °C
21.8
A
(3)
Drain current (pulsed)
140
A
PTOT (1)
Total dissipation at TC = 25 °C
80
W
(3)
Total dissipation at TC = 25 °C
4
W
0.03
W/°C
-55 to 150
°C
ID
IDM
PTOT
Derating factor
TJ
Operating junction temperature
Storage temperature
Tstg
1. The value is rated according Rthj-c
2. The value is rated according Rthj-pcb
3. Pulse width limited by safe operating area
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (drain) (steady state)
1.56
°C/W
Thermal resistance junction-ambient
31.3
°C/W
Value
Unit
Rthj-pcb
(1)
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4.
Symbol
Avalanche data
Parameter
IAV
Not-repetitive avalanche current,
(pulse width limited by Tj Max)
17
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV , VDD = 24 V)
300
mJ
3/12
Electrical characteristics
2
STL150N3LLH5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
Test conditions
ID = 250 µA, VGS= 0
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±22 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 17.5 A
Symbol
Ciss
Coss
Crss
Qg
Typ.
Max.
30
V
VDS = Max rating @125 °C
1
10
µA
µA
±100
nA
1
V
0.0014 0.00175
0.0019 0.0024
VGS= 4.5 V, ID= 17.5 A
Unit
Ω
Ω
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
RG
Gate input resistance
Qgs
Min.
VDS = Max rating,
IDSS
Table 6.
4/12
On/off states
Test conditions
VDS = 25 V, f=1 MHz,
VGS=0
VDD=15 V, ID = 35 A
VGS =4.5 V
(see Figure 14)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
Min.
Typ.
Max.
Unit
5800
1147
127
pF
pF
pF
40
13.4
14.9
nC
nC
nC
1.1
Ω
STL150N3LLH5
Electrical characteristics
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Symbol
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
Max.
17.2
30.8
65.8
47.8
VDD=15 V, ID= 17.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Unit
ns
ns
ns
ns
Source drain diode
Max
Unit
Source-drain current
35
A
ISDM(1)
Source-drain current (pulsed)
140
A
VSD(2)
Forward on voltage
ISD = 35 A, VGS=0
1.1
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A,
ISD
trr
Qrr
IRRM
Parameter
Test conditions
di/dt = 100 A/µs,
VDD=25 V
Min
Typ.
43.8
46
2.1
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STL150N3LLH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Thermal impedance
HV42710
ID(A)
a is
are n)
his S(o
n t RD
n o ax
io
m
t
era by
Op ited
lim
100
Figure 3.
TJ = 150 °C
TC = 25 °C
Single pulse
10 ms
10
100 ms
1
1s
0.1
0.01
0.1
1
VDS(V)
10
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
Static drain-source on resistance
HV42790
BVDSS
HV42770
RDS(on)
(mΩ)
(norm)
1.1
2.5
1.05
2.0
1
1.5
0.95
1.0
0.9
0.5
0.85
-55
6/12
-30
-5
20
45
70
95
120
145
TJ(°C)
0
10
20
30
ID(A)
STL150N3LLH5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
HV42730
VGS(V)
Capacitance variations
HV42760
C(pF)
f=1MHz
VDD=15 V
VGS=5 V
ID=34 A
12
10
10000
8000
8
Ciss
6000
6
4
4000
2
2000
Coss
Crss
0
0
20
0
40
60
Qg(nC)
Figure 10. Normalized gate threshold voltage
vs temperature
HV42740
VGS(th)
(norm)
10
0
20
VDS(V)
Figure 11. Normalized on resistance vs
temperature
HV42750
RDS(on)
(norm)
ID=250µA
1.2
1.6
1
1.4
0.8
1.2
0.6
1
0.4
0.8
0.2
-55
-30
-5
20
45
70
95
120
145 TJ (°C)
0.6
-55
ID=17 A
VGS=10 V
-30
-5
20
45
70
95
120 145 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
HV42780
VSD(V)
0.8
TJ=-55°C
0.7
TJ=25°C
0.6
0.5
TJ=175°C
0.4
0.3
0
10
20
30
ID(A)
7/12
Test circuits
3
STL150N3LLH5
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/12
Figure 18. Switching time waveform
STL150N3LLH5
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STL150N3LLH5
Pow erFLA T™ (6x5)m echanicaldata
mm.
inch
D IM .
M in.
A
0.83
0.93
0.02
0.05
A3
0.20
0.35
D
D2
0.40
M in.
0.031
0.47
0.013
4.20
0.32
0.036
0.0007
0.0019
0.015
0.163
0.165
E
6.00
0.236
5.75
0.226
E2
3.43
3.48
3.53
E4
2.58
2.63
2.68
0.70
0.80
L
0.018
0.187
4.25
E1
e
M ax.
0.196
4.75
4.15
Typ.
0.007
5.00
D1
10/12
M ax.
A1
b
0.80
Typ.
0.135
1.27
0.167
0.137
0.139
0.103
0.105
0.050
0.90
0.027
0.031
0.035
STL150N3LLH5
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
22-Oct-2007
1
First release
01-Apr-2008
2
Document status promoted from preliminary data to datasheet
23-Sep-2008
3
VGS value has been changed on Table 2 and Table 5
11/12
STL150N3LLH5
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12