STS11N3LLH5 N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET™ V Power MOSFET Features Type VDSS STS11N3LLH5 30 V RDS(on) max ID 5 < 0.0132 Ω 11 A (1) 8 1. The value is rated according Rthj-pcb 4 ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 1 SO-8 Applications ■ Figure 1. Switching applications Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics' STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.. Table 1. Device summary Order code Marking Package Packaging STS11N3LLH5 11D3L SO-8 Tape and reel June 2011 Doc ID 15982 Rev 2 1/12 www.st.com 12 Contents STS11N3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 15982 Rev 2 STS11N3LLH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V + 22 / - 20 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25 °C 11 A ID (1) Drain current (continuous) at TC=100 °C 8 A Drain current (pulsed) 44 A Total dissipation at TC = 25 °C 2.7 W Derating factor 0.02 W/°C -55 to 150 °C Value Unit 46 °C/W IDM (2) PTOT (2) TJ Operating junction temperature Storage temperature Tstg 1. The value is rated according to Rthj-pcb 2. Pulse width limited by safe operating area. Table 3. Thermal resistance Symbol Rthj-pcb (1) Parameter Thermal resistance junction-pcb 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec Doc ID 15982 Rev 2 3/12 Electrical characteristics 2 STS11N3LLH5 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 250 µA IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating, VDS =max rating TC = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = + 22 / - 20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5.5 A VGS= 4.5 V, ID= 5.5 A V(BR)DSS Table 5. Symbol Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1 V 0.0117 0.0132 0.017 0.019 Ω Ω Dynamic Parameter Test conditions Min. Typ. - 724 132 20 pF pF pF 5 2 2 nC nC nC Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 11 A VGS= 4.5 V Figure 14 - RG Intrinsic gate resistance f=1 MHz gate dc bias=0 test signal level = 20 mV open drain - Table 6. Switching times Symbol Parameter td(on) tr td(off) tf 4/12 On/off states Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15 V, ID= 5.5 A, RG=4.7 Ω, VGS =10 V Figure 13 Doc ID 15982 Rev 2 Max. 3.3 Min. Typ. - 4 4.2 21 3.5 Unit Ω Max. Unit - ns ns ns ns STS11N3LLH5 Electrical characteristics Table 7. Symbol ISD Parameter Test conditions Min Typ. Max Unit Source-drain current - 11 A (1) Source-drain current (pulsed) - 44 A (2) Forward on voltage ISD = 11 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11 A, di/dt = 100 A/µs, VDD= 25 V, Tj=150 °C - ISDM VSD Source drain diode trr Qrr IRRM 21 10 1 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 15982 Rev 2 5/12 Electrical characteristics STS11N3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM04963v1 ID (A) a are Tj=150°C Tc=25°C is ) s on thi RDS( in on max i t era by Op ited Lim 100 10 Sinlge pulse 10ms 1 100ms 1s 0.1 0.01 0.1 Figure 4. 10 1 VDS(V) Output characteristics AM04954v1 ID (A) VGS=10V AM04955v1 ID (A) VDS=4V 100 100 80 80 5V 60 60 4V 40 40 20 20 3V 0 0 Figure 6. 1 2 4 3 Normalized BVDSS vs temperature AM04956v1 BVDSS (norm) 0 0 VDS(V) Figure 7. 2 6 8 10 VGS(V) Static drain-source on resistance AM04957v1 RDS(on) (Ω) ID=1mA ID=5.5A VGS=10V 25 1.10 4 20 1.05 15 1.00 10 0.95 0.90 -50 6/12 5 0 0 50 100 150 TJ(°C) Doc ID 15982 Rev 2 0 2 4 6 8 10 ID(A) STS11N3LLH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM04958v1 VGS (V) VDD=15V ID=11A 12 Capacitance variations AM04959v1 C (pF) TJ=25°C f=1MHz 1000 10 800 Ciss 8 600 6 400 4 200 2 0 0 4 2 8 6 10 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM04960v1 VGS(th) (norm) ID=250µA 1.2 0 0 Coss Crss 20 10 VDS(V) Figure 11. Normalized on resistance vs temperature AM04961v1 RDS(on) (norm) ID=5.5A VGS=10V 1.8 1.1 1.6 1.0 0.9 1.4 0.8 1.2 0.7 1.0 0.6 0.8 0.5 0.4 -50 50 0 100 150 TJ(°C) 0.6 -50 0 50 100 150 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04961v1 VSD (V) TJ=-50°C 0.9 0.8 TJ=25°C 0.7 0.6 TJ=175°C 0.5 0.4 0 2 4 6 8 10 ISD(A) Doc ID 15982 Rev 2 7/12 Test circuits 3 STS11N3LLH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 15982 Rev 2 10% AM01473v1 STS11N3LLH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15982 Rev 2 9/12 Package mechanical data Table 8. STS11N3LLH5 SO-8 mechanical data mm Dim. Min. Typ. A Max. 1.75 A1 0.10 0.25 A2 1.25 b 0.28 0.48 c 0.17 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 1.27 h 0.25 0.50 L 0.40 1.27 L1 k 1.04 0° 8° ccc 0.10 Figure 19. SO-8 drawing 0016023_Rev_D 10/12 Doc ID 15982 Rev 2 STS11N3LLH5 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 02-Jul-2009 1 First release. 21-Jun-2011 2 New RDS(on) value. Updated mechanical data. Doc ID 15982 Rev 2 11/12 STS11N3LLH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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