STMICROELECTRONICS STP20NM60A

STB20NM60A-1
STP20NM60A - STF20NM60A
N-CHANNEL 650V@Tjmax - 0.25Ω - 20A I²PAK/TO-220/TO-220FP
MDmesh™ MOSFET
TYPE
VDSS @Tjmax
RDS(on)
ID
STB20NM60A-1
STP20NM60A
STF20NM60A
650 V
650 V
650 V
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
20 A
20 A
20 A
■
■
■
■
3
TYPICAL RDS(on) = 0.25Ω
HIGH dv/dt
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
3
12
1
2
TO-220
I²PAK
3
1
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar
competition’s products.
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SPECIFICALLY DESIGNED FOR ADAPTORS IN
QUASI-RESONANT CONFIGURATION
ORDER CODES
PART NUMBER
MARKING
PACKAGE
PACKAGING
STB20NM60A-1
B20NM60A
I2PAK
TUBE
STP20NM60A
P20NM60A
TO-220
TUBE
STF20NM60A
F20NM60A
TO-220FP
TUBE
March 2004
1/12
STB20NM60A-1/STP20NM60A/STF20NM60A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STB20NM60A-1
STP20NM60A
VGS
ID
ID
IDM ()
PTOT
Gate-source Voltage
STF20NM60A
±30
V
Drain Current (continuous) at TC = 25°C
20
20(*)
Drain Current (continuous) at TC = 100°C
12.6
12.6(*)
A
80
80(*)
A
Total Dissipation at TC = 25°C
192
45
W
Derating Factor
1.2
0.36
W/°C
Drain Current (pulsed)
dv/dt (1)
Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg
Storage Temperature
Tj
Unit
A
15
V/ns
--
2500
V
–55 to 150
Max. Operating Junction Temperature
°C
() Pulse width limited by safe operating area
(1) ISD ≤ 20A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
Rthj-amb
Thermal Resistance Junction-ambient
Max
Tl
I2PAK/TO-220
TO-220FP
0.65
2.8
Maximum Lead Temperature For Soldering Purpose
°C/W
62.5
°C/W
300
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10A
IDSS
IGSS
2/12
Test Conditions
Min.
Typ.
Max.
600
V
1
µA
10
µA
±100
nA
3
4
V
0.25
0.29
Ω
VDS = Max Rating, TC = 125 °C
2
Unit
STB20NM60A-1/STP20NM60A/STF20NM60A
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Test Conditions
Min.
VDS > ID(on) x RDS(on)max,
ID = 10A
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
Max.
Unit
11
S
1630
pF
Ciss
Input Capacitance
Coss
Output Capacitance
350
pF
Crss
Reverse Transfer
Capacitance
33
pF
Coss eq. (2)
Equivalent Output
Capacitance
150
pF
VGS = 0V, VDS = 0V to 400V
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
VDD = 300V, ID = 10 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 20A,
VGS = 10V
Typ.
Max.
Unit
20
ns
16
ns
45
60
nC
8.2
nC
19
nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
VDD = 300V, ID = 20 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Typ.
Max.
Unit
46
ns
20
ns
SOURCE DRAIN DIODE
Symbol
Max.
Unit
Source-drain Current
20
A
ISDM (2)
Source-drain Current (pulsed)
80
A
VSD (1)
Forward On Voltage
ISD = 20 A, VGS = 0
1.5
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs,
VDD = 50 V, Tj = 25°C
(see test circuit, Figure 5)
432
5.1
23.6
ns
µC
A
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs,
VDD = 50 V, Tj = 150°C
(see test circuit, Figure 5)
595
7.3
24.8
ns
µC
A
ISD
Parameter
Test Conditions
Min.
Typ.
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP
Thermal Impedance for TO-220/I2PAK
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
4/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Transconductance
Static Drain-Source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Typical Switching Time vs Rg
Typical Drain Current Slope vs Rg
Typical Drain Source Voltage Slope vs Rg
Typical Switching Losses vs Rg
6/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Typical Coss Stored Energy vs Rg
7/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
8/12
STB20NM60A-1/STP20NM60A/STF20NM60A
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
9/12
STB20NM60A-1/STP20NM60A/STF20NM60A
TO-220 MECHANICAL DATA
DIM.
10/12
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
L30
28.90
0.645
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STB20NM60A-1/STP20NM60A/STF20NM60A
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L5
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
11/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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