STMICROELECTRONICS STS8NFS30L

STS8NFS30L

N - CHANNEL 30V - 0.018Ω - 8A S0-8
MOSFET PLUS SCHOTTKY RECTIFIER

STripFET
MAIN PRODUCT CHARACTERISTICS
MOSFET
V DSS
R DS(on )
30 V
<0.022 Ω
8 A
SCHOTTKY
IF (A V)
V RRM
V F(M AX)
3 A
30 V
0.51 V
ID
SO-8
DESCRIPTION:
This product associates the latest low voltage
StripFET in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DCDC converters for printers, portable equipment,
and cellular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Drain-source Voltage (VGS = 0)
V DGR
Drain- gate Voltage (RGS = 20 kΩ)
V GS
Gate-source Voltage
o
Valu e
Unit
30
V
30
V
± 20
V
ID
Drain Current (continuous) at Tc = 25 C
8
A
ID
o
5
A
IDM(•)
P t ot
Drain Current (continuous) at Tc = 100 C
Drain Current (pulsed)
32
A
Total Dissipation at Tc = 25 o C
2.5
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol
V RRM
I F(RMS)
Parameter
Valu e
Un it
Repetitive Peak Reverse Voltage
30
V
RMS Forward Current
20
A
I F (AV)
Average F orward Current
T L=125 o C
δ =0.5
3
A
I FSM
Surge Non Repetitive Forward Current
tp= 10 ms
Sinusoidal
75
A
I RSM
Non Repetitive Peak Reverse Current
tp=100 µs
1
A
dv/dt
Critical Rate Of Rise Of Reverse Voltage
10000
V/µs
(•) Pulse width limited by safe operating area
December 1999
1/8
STS8NFS30L
THERMAL DATA
R thj -amb
R thj -amb
T s tg
Tj
(*) Thermal Resistance Junction-ambient MOSFET
(*) Thermal Resistance Junction-ambientSCHOT TKY
Storage T emperature Range
Maximum
Junction Temperature
(*) mounte d on FR-4 board (ste ady stat e)
o
50
100
-65 to 150
150
o
C/W
C/W
o
C
o
C
MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
I DSS
IGSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
Gate-body Leakage
Current (VDS = 0)
Min.
V GS = 0
Typ.
Max.
30
Unit
V
o
T c = 125 C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
V GS = 4.5V
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
Typ.
Max.
Unit
1
1.6
2.5
V
0.018
0.021
0.022
0.026
Ω
Ω
ID = 4 A
ID = 4 A
8
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =4 A
V GS = 0
Min.
Typ.
Max.
Unit
10
S
1050
250
85
pF
pF
pF
STS8NFS30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
t d(on)
tr
Turn-on Delay T ime
Rise Time
V DD = 15 V
ID = 4 A
R G = 4.7 Ω
V GS = 4.5 V
(Resistive Load, see fig. 3)
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 24 V
ID = 8 A
Min.
Typ.
Max.
22
60
V GS = 4.5 V
Unit
ns
ns
17.5
4
7
23
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
t d(of f)
tf
Turn-off Delay T ime
Fall T ime
V DD = 15 V
ID = 4 A
V GS = 4.5 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
42
10
ns
ns
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall T ime
Cross-over Time
V DD = 24 V
ID = 8 A
V GS = 4.5 V
R G = 4.7 Ω
(Induct ive Load, see fig. 5)
11
12
25
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 8 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 8 A
di/dt = 100 A/µs
T j = 150 o C
V DD = 20 V
(see test circuit, figure 5)
t rr
Q rr
I RRM
Typ.
V GS = 0
Max.
Unit
8
32
A
A
2
V
50
ns
40
nC
1.6
Α
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbo l
I R (∗)
V F(∗)
Parameter
Test Con ditions
o
Min.
Typ.
Max.
Unit
Reversed Leakage
Current
T J= 25 C
T J= 125 oC
V R =30V
V R=30V
0.03
0.2
100
mA
mA
Forward Voltage drop
T J= 25 oC
o
T J= 125 C
I F =3A
I F =3A
0.38
0.51
0.46
V
V
3/8
STS8NFS30L
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/8
STS8NFS30L
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STS8NFS30L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STS8NFS30L
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
7/8
STS8NFS30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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