STS2DPFS20V P-CHANNEL 20V - 0.14 Ω - 2.5A SO-8 2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY VDSS RDS(on) ID 20 V < 0.20Ω (@4.5V) < 0.25Ω (@2.7V) 2.5 A IF(AV) VRRM VF(MAX) 3A 30 V 0.51 V DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Dain-source Voltage (VGS = 0) Parameter 20 V Drain-gate Voltage (RGS = 20 kW) 20 V ± 12 V Gate- source Voltage ID Drain Current (continuous) at TC = 25°C 2.5 A ID Drain Current (continuous) at TC = 100°C 1.58 A IDM(•) Ptot Drain Current (pulsed) 10 A Total Dissipation at TC = 25°C 2 W Value Unit SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) Parameter Repetitive Peak Reverse Voltage 30 V RMS Forward Curren 20 A IF(AV) Average Forward Current TL=125 oC δ =0.5 3 A IFSM Surge Non Repetitive Forward Current tp= 10 ms Sinusoidal 75 A IRSM Non Repetitive Peak Reverse Current tp=100 µs dv/dt Critical Rate Of Rise Of Reverse Voltage 1 A 10000 V/µs (•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed November 2002 . 1/8 STS2DPFS20V TERMAL DATA Rthj-amb Rthj-amb Tstg Tj (*)Thermal Resistance Junction-ambient MOSFET Resistance Junction-ambient SCHOTTKY Storage Temperature Range Maximum Lead Temperature For Soldering Purpose oC/W 62.5 100 -55 to 150 150 MAX (*)Thermal oC/W oC oC (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 12 V V(BR)DSS Min. Typ. Max. 20 Unit V 1 10 µA µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 4.5 V VGS = 2.7 V ID = 1 A ID = 1 A Min. Typ. 0.6 V 0.14 0.20 0.20 0.25 Ω Ω Typ. Max. Unit SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. IR(*) Reversed Leakage Current TJ= 25 oC TJ= 125 oC VR= 30 V VR= 30 V 30 0.2 100 mA mA VF(*) Forward Voltage drop TJ= 25 oC TJ= 125 oC IF= 3 A IF= 3 A 0.40 0.51 0.46 mA mA Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS= 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, f = 1 MHz, VGS = 0 ID=1 A Min. 4 S 315 87 17 pF pF pF STS2DPFS20V ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions td(on) tr Turn-on Delay Time Rise Time ID = 1 A VDD = 10 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 10V ID= 2A VGS=4.5V Min. Typ. Max. 38 30 Unit ns ns 3.5 0.34 0.8 4.7 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 1 A VDD = 10 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) 45 11 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 2 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 2 A VDD = 10 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 15 7.5 1 Max. Unit 2 10 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS2DPFS20V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS2DPFS20V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STS2DPFS20V Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS2DPFS20V SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS2DPFS20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8