STS3DPFS45 P-CHANNEL 45V - 0.080 Ω - 3A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET VDSS RDS(on) ID < 0.11 Ω 3A SCHOTTKY 45 V IF(AV) VRRM VF(MAX) 3A 45 V 0.51 V DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Dain-source Voltage (VGS = 0) Parameter 45 V Drain-gate Voltage (RGS = 20 kΩ) 45 V ± 16 V ID Drain Current (continuos) at TC = 25°C 3 A ID Drain Current (continuos) at TC = 100°C 1.9 A Drain Current (pulsed) 12 A Total Dissipation at TC = 25°C 2 W Value Unit IDM(•) Ptot Gate- source Voltage SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) Parameter Repetitive Peak Reverse Voltage 45 V RMS Forward Curren 20 A 3 A 75 A 1 A 1 A 10000 V/µs IF(AV) Average Forward Current IFSM Surge Non Repetitive Forward Current IRRM Repetitive Peak Reverse Current IRSM Non Repetitive Peak Reverse Current dv/dt Critical Rate Of Rise Of Reverse Voltage TL=125 oC δ =0.5 tp= 10 ms Sinusoidal tp=2 µs F=1 kHz tp=100 µs (•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed February 2002 . 1/8 STS3DPFS45 TERMAL DATA Rthj-amb Rthj-amb Tstg Tj Thermal Resistance Junction-ambient MOSFET Thermal Resistance Junction-ambient SCHOTTKY Storage Temperature Range Maximum Lead Temperature For Soldering Purpose oC/W 62.5 100 -65 to 150 150 MAX oC/W oC oC (*) Mounted on Fr-4 board (Steady State) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 45 Unit V 1 10 µA µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID(on) On State Drain Current VGS = 10 V ID = 250 µA Min. Typ. Max. Unit 2 3 4 V 0.080 0.11 Ω ID = 1.5 A 3 A SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit IR(*) Reversed Leakage Current TJ= 25 oC TJ= 125 oC VR= 45 V VR= 45 V 0.03 0.2 100 mA mA VF(*) Forward Voltage drop TJ= 25 oC TJ= 125 oC IF= 3 A IF= 3 A 0.42 0.51 0.46 mA mA Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions Min. gfs (*) Forward Transconductance VDS>ID(on)xRDS(on)max ID=1.5A 4 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1190 200 56 pF pF pF STS3DPFS45 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions td(on) tr Turn-on Delay Time Rise Time ID = 1.5 A VDD = 20 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 20V ID= 3A VGS=10V Min. Typ. Max. 20 25 Unit ns ns 24.5 4 5.5 33 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time ID = 1.5 A VDD = 20 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 100 22 ns ns td(off) tf tc Turn-off Delay Time Fall Time Cross-over Time Vclamp = 32 V RG = 4.7Ω, 95 11 35 ns ns ns ID = 3 A VGS = 10 V SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 3 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 3 A VDD = 15 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 40 85 3.8 Max. Unit 3 12 A A 2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS3DPFS45 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS3DPFS45 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/8 STS3DPFS45 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS3DPFS45 SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS3DPFS45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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