STTH6112TV Ultrafast recovery - 1200 V diode Main product characteristics IF(AV) 2 x 30 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) K2 A2 K1 A1 K1 K2 A1 STTH6112TV2 STTH6112TV1 45 ns A2 A1 Features and benefits ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature ■ Insulated package: Electrical insulation = 2500 VRMS Capacitance < 45 pF A1 K1 A2 K2 K1 A2 K2 ISOTOP Order codes Part Number Marking STTH6112TV1 STTH6112TV1 STTH6112TV2 STTH6112TV2 Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/8 www.st.com 8 Characteristics STTH6112TV 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V IF(RMS) RMS forward current 100 A 30 A IF(AV) Average forward current, δ = 0.5 IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 300 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 250 A Tstg Storage temperature range -65 to + 150 °C 150 °C Tj Table 2. Tc = 70° C per diode Maximum operating junction temperature Thermal parameters Symbol Parameter Value Rth(j-c) Junction to case Rth(c) Coupling thermal resistance Per diode 1.16 Total 0.63 Unit °C/W 0.1 When the diodes are used simultaneously: ∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Min. Typ VF(2) Forward voltage drop µA 15 IF = 25 A 1.25 1.90 1.20 1.80 V Tj = 25° C 2.25 IF = 30 A Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.60 x IF(AV) + 0.012 IF2(RMS) 2/8 150 2.10 Tj = 150° C Tj = 125° C Unit 20 VR = VRRM Tj = 25° C Tj = 125° C Max. 1.35 2.05 1.30 1.95 STTH6112TV Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ Max. IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Unit 115 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 57 80 IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C 45 65 Reverse recovery current IF = 30 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 25 35 A S Softness factor IF = 30 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 1.5 tfr Forward recovery time dIF/dt = 100 A/µs IF = 30 A VFR = 1.5 x VFmax, Tj = 25° C 550 ns Forward recovery voltage IF = 30 A, dIF/dt = 100 A/µs, Tj = 25° C trr IRM VFP Reverse recovery time Figure 1. 80 Conduction losses versus average current Figure 2. 6 ns V Forward voltage drop versus forward current IFM(A) P(W) 200 δ=0.05 70 δ=0.1 δ=0.2 δ=1 δ=0.5 180 Tj=150°C (Maximum values) 160 60 140 50 Tj=150°C =150°C (Typical (Typical values) values) 120 40 100 30 80 Tj= 25 °C (Maximum values) 60 20 T 40 10 IF(AV)(A) δ=tp/T 20 tp 0 0 5 10 15 20 25 30 35 0 0.0 VFM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3/8 Characteristics Figure 3. STTH6112TV Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Zth(j-c)/Rth(j-c) Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 1.0 60 0.9 55 VR=600V Tj=125°C 50 0.8 IF= 2 x IF(AV) 45 0.7 IF= IF(AV) 40 0.6 35 0.5 30 IF=0.5 x IF(AV) 25 0.4 Single pulse 20 0.3 15 0.2 10 0.1 5 tp(s) dIF/dt(A/µs) 0 0.0 1.E-03 1.E-02 Figure 5. 1.E-01 1.E+00 0 1.E+01 Reverse recovery time versus dIF/dt (typical values) 50 100 Figure 6. 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values) Qrr(µC) trr(ns) 8 800 VR=600V Tj=125°C VR=600V Tj=125°C 7 IF= 2 x IF(AV) 700 6 IF= IF(AV) IF= 2 x IF(AV) 600 5 4 500 IF=0.5 x IF(AV) 3 IF= IF(AV ) 400 2 IF=0.5 x IF(AV) 300 1 dIF/dt(A/µs) dIF/dt(A/µs) 200 0 50 Figure 7. 100 150 200 0 250 300 350 400 450 500 Softness factor versus dIF/dt (typical values) 0 50 Figure 8. S factor 100 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature 2.00 3.0 IF = 2 x IF(AV) VR=600V Tj=125°C 2.5 IF = IF(AV) VR=600V Reference: T j=125°C 1.75 Sfactor 1.50 1.25 2.0 1.00 0.75 1.5 IRM 0.50 1.0 dIF/dt(A/µs) 0.00 25 0.5 0 4/8 tRR QRR 0.25 50 100 150 200 250 300 350 400 450 500 Tj(°C) 50 75 100 125 STTH6112TV Figure 9. Characteristics Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) VFP(V) 1100 30 IF = IF(AV) Tj=125°C IF = IF(AV) VFR = 1.5 x V F max. Tj=125°C 1000 25 900 800 20 700 15 600 10 500 400 5 300 dIF/dt(A/µs) 0 dIF/dt(A/µs) 200 0 100 Table 5. 200 300 400 500 0 100 200 300 400 500 Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 5/8 Package information 2 STTH6112TV Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 6. ISOTOP dimensions DIMENSIONS REF. Millimeters Inches E G2 A A1 Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 F C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 P1 D Max E2 C2 F1 Min. C G S B D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 G1 F1 4.60 5.00 0.181 0.197 E1 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 ØP In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH6112TV 3 4 Ordering information Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH6112TV1 STTH6112TV1 ISOTOP 27 g 10 Tube STTH6112TV2 STTH6112TV2 ISOTOP 27 g 10 Tube Revision history Date Revision 02-Mar-2006 1 Description of Changes First issue. 7/8 STTH6112TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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