STMICROELECTRONICS STTH3012D

STTH3012
Ultrafast recovery - 1200 V diode
Main product characteristics
A
IF(AV)
30 A
VRRM
1200 V
Tj
175° C
VF (typ)
1.30 V
trr (typ)
57 ns
A
K
DO-247
STTH3012W
Features and benefits
■
Ultrafast, soft recovery
■
Very low conduction and switching losses
■
High frequency and/or high pulsed current
operation
■
High reverse voltage capability
■
High junction temperature
K
A
K
TO-220AC
STTH3012D
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Order codes
Part Number
Marking
STTH3012D
STTH3012D
STTH3012W
STTH3012W
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006
Rev 1
1/9
www.st.com
9
Characteristics
STTH3012
1
Characteristics
Table 1.
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
RMS forward current
IF(AV)
Average forward current, δ = 0.5
IFRM
Repetitive peak forward current
IFSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
Tstg
Storage temperature range
Tj
Table 2.
IR(1)
1200
V
50
A
30
A
300
A
210
A
-65 to + 175
°C
175
°C
Tc = 105° C
tp = 5 µs, F = 5 kHz square
Thermal parameters
Parameter
Junction to case
Rth(j-c)
Symbol
Unit
Maximum operating junction temperature
Symbol
Table 3.
Value
Value
Unit
0.95
°C/W
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
Tj = 25° C
Tj = 125° C
Min.
Typ
VF(2)
Forward voltage drop
µA
15
IF = 25 A
1.25
1.9
1.20
1.8
V
Tj = 25° C
2.25
IF = 30 A
Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.60 x IF(AV) + 0.012 IF2(RMS)
2/9
150
2.1
Tj = 150° C
Tj = 125° C
Unit
20
VR = VRRM
Tj = 25° C
Tj = 125° C
Max.
1.35
2.05
1.30
1.95
STTH3012
Characteristics
Table 4.
Dynamic characteristics
Symbol
Parameter
trr
Test conditions
Min.
Typ
Max.
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
Reverse recovery time
Unit
115
ns
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
57
80
Reverse recovery current
IF = 30 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
25
35
A
S
Softness factor
IF = 30 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
1.5
tfr
Forward recovery time
dIF/dt = 100 A/µs
IF = 30 A
VFR = 1.5 x VFmax, Tj = 25° C
550
ns
Forward recovery voltage
IF = 30 A, dIF/dt = 100 A/µs,
Tj = 25° C
IRM
VFP
Figure 1.
Conduction losses versus
average current
Figure 2.
P(W)
6
V
Forward voltage drop versus
forward current
IFM(A)
80
120
δ = 0.2
70
δ = 0.5
110
100
δ = 0.1
60
Tj=150°C
(typical values)
90
δ = 0.05
50
80
δ=1
70
40
Tj= 25°C
(maximum values)
60
50
30
40
20
Tj=150°C
(maximum values)
30
T
20
10
IF(AV)(A)
δ=tp/T
0
0
5
10
15
20
25
30
10
tp
VFM(V)
0
35
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
3/9
Characteristics
Figure 3.
STTH3012
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
Zth(j-c)/Rth(j-c)
1.0
60
0.9
55
VR=600V
Tj=125°C
50
0.8
45
0.7
IF=2 x IF(AV)
40
IF=IF(AV)
0.6
35
0.5
30
0.4
25
20
Single pulse
0.3
IF=0.5 x IF(AV)
15
0.2
10
0.1
5
tp(s)
0.0
dIF/dt(A/µs)
0
1.E-03
1.E-02
Figure 5.
1.E-01
1.E+00
Reverse recovery time versus
dIF/dt (typical values)
0
50
Figure 6.
100
150
200
250
300
350
400
450
500
Reverse recovery charges versus
dIF/dt (typical values)
Qrr(µC)
trr(ns)
8
800
VR=600V
Tj=125°C
VR=600V
Tj=125°C
7
IF=2 x IF(AV)
700
6
IF=2 x IF(AV)
600
5
IF=IF(AV)
IF=IF(AV)
4
500
IF=0.5 x IF(AV)
IF=0.5 x IF(AV)
3
400
2
300
1
dIF/dt(A/µs)
dIF/dt(A/µs)
200
0
50
Figure 7.
100
150
200
250
300
0
350
400
450
500
Softness factor versus dIF/dt
(typical values)
0
50
Figure 8.
S factor
100
150
200
250
300
350
400
450
500
Relative variations of dynamic
parameters versus junction
temperature
2.00
3.0
IF ≤ 2xIF(AV)
VR=600V
Tj=125°C
2.5
1.75
IF=IF(AV)
VR=600V
Reference: Tj=125°C
S factor
1.50
1.25
2.0
1.00
trr
0.75
1.5
IRM
0.50
1.0
QRR
0.25
Tj(°C)
dIF/dt(A/µs)
0.5
25
0
4/9
0.00
50
100
150
200
250
300
350
400
450
500
50
75
100
125
STTH3012
Figure 9.
Characteristics
Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus dIF/dt
(typical values)
tfr(ns)
VFP(V)
1100
30
IF=IF(AV)
Tj=125°C
IF=IF(AV)
VFR=1.5 x VF max.
Tj=125°C
1000
25
900
20
800
700
15
600
10
500
400
5
300
dIF/dt(A/µs)
0
dIF/dt(A/µs)
200
0
100
200
300
400
500
0
100
200
300
400
500
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
VR(V)
10
1
10
100
1000
5/9
Package information
2
STTH3012
Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 Nm (TO-220AC)
Recommended torque value: 0.80 Nm (DO-247)
Maximum torque value: 0.7 Nm (TO-220AC)
Maximum torque value: 1.0 Nm (DO-247)
Table 5.
DO-247 dimensions
DIMENSIONS
REF.
Millimeters
Inches
Min.
Max
Min.
Max.
A
4.85
5.15
0.191
0.203
D
2.20
2.60
0.086
0.102
E
0.40
0.80
0.015
0.031
F
1.00
1.40
0.039
0.055
V
Dia
V
F2
A
H
F3
2.00
2.00
G
L5
L
L2
L4
F2
L3
F
G
M
E
0.094
0.429
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30
0.169
0.145
18.50
14.20
0.728
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00
0.078
0.118
V
5°
5°
V2
60°
60°
Dia.
6/9
0.078
H
L3
D
V2
2.40
10.90
L2
L1
F3
0.078
3.55
3.65
0.139
0.143
STTH3012
Package information
Table 6.
T0-220AC dimensions
DIMENSIONS
REF.
A
H2
ØI
C
L5
L7
L6
L2
F1
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
H2
10.00
10.40
0.393
0.409
D
L9
L2
L4
F
M
E
G
Millimeters
16.40 typ.
0.645 typ.
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
Diam. I
2.6 typ.
3.75
3.85
0.102 typ.
0.147
0.151
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
7/9
Ordering information
3
4
8/9
STTH3012
Ordering information
Part Number
Marking
Package
Weight
Base qty
Delivery mode
STTH3012D
STTH3012D
TO-220AC
1.86 g
50
Tube
STTH3012W
STTH3012W
DO-247
4.4 g
30
Tube
Revision history
Date
Revision
02-Mar-2006
1
Description of Changes
First issue.
STTH3012
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
9/9