STTH60L04W Ultrafast high voltage rectifier Mian product characteristics IF(AV) 60 A VRRM 400 V Tj (max) 175° C VF (typ) 0.83 V trr (max) 50 ns A K Features and benefits DO-247 STTH60L04W ● Ultrafast switching ● Low reverse current ● Low thermal resistance ● Reduces switching and conduction losses Description Order codes The STTH60L04W uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 1. Part number Marking STTH60L04W STTH60L04 Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) RMS forward current 90 A 60 A 600 A -55 to + 175 °C 175 °C IF(AV) Average forward current Tc = 90° C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature October 2006 Rev 1 Per diode 1/7 www.st.com 7 Characteristics 1 STTH60L04W Characteristics Table 2. Thermal resistance Symbol Rth(j-c) Table 3. Symbol Parameter Value (max). Unit 0.70 °C/W Junction to case Static electrical characteristics (per diode) Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25° C Tj = 150° C Tj = 25° C Tj = 150° C Min. Typ Max. Unit 50 VR = VRRM µA 100 1000 1.2 IF = 60 A V 0.83 1.0 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF2(RMS) Table 4. Symbol trr Parameter Reverse recovery time Test conditions Tj = 25° C 66 IF = 1 A dIF/dt = 200 A/µs VR = 30 V 36 Tj = 125° C VR = 200 V IF = 60 A dIF/dt = 100 A/µs Softness factor Tj = 125° C VR = 200 V IF = 60 A dIF/dt = 100 A/µs tfr Forward recovery time Tj = 25° C dIF/dt = 200 A/µs IF = 60 A VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25° C IF = 60 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax Sfactor Min Typ Max Unit IF = 1 A dIF/dt = 50 A/µs VR = 30 V Reverse recovery current IRM 2/7 Dynamic characteristics (per diode) 90 ns 50 15 A 600 ns 0.4 3.2 V STTH60L04W Figure 1. Characteristics Conduction losses versus Figure 2. average forward current (per diode) P (W) I 200 80 d=0.5 FM Forward voltage drop versus forward current (per diode) (A) d=1 180 70 d=0.2 TJ=150°C (Maximum values) 160 60 140 d=0.1 50 120 d=0.05 TJ=150°C (Typical values) 100 40 80 30 60 20 T 10 40 0 10 Figure 3. 1.0 20 30 40 V FM (V) 20 I F(AV) (A) 0 50 60 70 0.0 80 0.2 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration I Z th(j-c) /R th(j-c) 45 RM Single pulse 0.9 TJ=25°C (Maximum values) 0 35 0.7 0.6 0.8 1.0 1.2 1.4 1.6 Peak reverse recovery current versus dIF/dt (typical values, per diode) (A) IF=IF(AV) VR=200V Tj=125°C 40 0.8 0.4 30 0.6 25 0.5 20 0.4 15 0.3 10 0.2 0.1 5 t P (s) 0.0 1.E-04 1.E-03 Figure 5. dI F /dt(A/µs) 0 1.E-02 1.E-01 1.E+00 Reverse recovery time versus dIF/dt (typical values, per diode) 0 50 Figure 6. t rr (ns) 100 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values, per diode) Q rr (nC) 3000 300 IF=IF(AV) VR=200V Tj=125°C 250 IF=IF(AV) VR=200V Tj=125°C 2500 200 2000 150 1500 100 1000 500 50 dI F /dt(A/µs) 0 0 50 100 150 200 250 300 dI F /dt(A/µs) 0 350 400 450 500 0 100 200 300 400 500 3/7 Characteristics Figure 7. STTH60L04W Reverse recovery softness factor versus dIF/dt (typical values, per diode) S FACTOR Figure 8. Relative variations of dynamic parameters versus junction temperature 1.6 0.8 IF < 2 x IF(AV) VR=200V Tj=125°C 0.7 SFACTOR 1.4 1.2 0.6 1.0 0.5 0.8 IRM & tRR 0.4 0.6 0.3 0.4 0.2 QRR 0.2 0.1 dI F /dt(A/µs) 0.0 0.0 25 0 50 Figure 9. 100 150 200 250 300 350 400 450 50 75 100 125 500 Transient peak forward voltage versus dIF/dt (typical values, per diode) Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) t VFP(V) 1000 8 IF=IF(AV) Tj=125°C 7 IF=IF(AV) VR=200V Reference: Tj=125°C T (°C) j fr (ns) IF=IF(AV) VFR=1.1 x V F max. Tj=125°C 900 800 6 700 5 600 4 500 400 3 300 2 200 1 100 dI /dt(A/µs) F 0 0 50 100 150 200 250 300 350 400 450 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C (pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C V (V) R 100 1 4/7 10 dI F /dt(A/µs) 0 100 1000 0 50 100 150 200 250 300 350 400 450 500 STTH60L04W 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.8 Nm ● Maximum torque value: 1.0 Nm Table 5. DO-247 Dimensions Dimensions Ref. Millimeters Min. V Typ. Max. Inches Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 Dia V F2 2.00 0.078 A H F3 2.00 G 2.40 0.078 10.90 0.094 0.429 L5 L L2 L4 F2 L3 L1 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 F3 D V2 L3 F G H M E 18.50 14.20 0.728 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 4 6/7 STTH60L04W Ordering information Ordering type Marking Package Weight Base qty Delivery mode STTH60L04W STTH60L04W DO-247 4.4 g 30 Tube Revision history Date Revision 26-Oct-2006 1 Description of Changes First issue STTH60L04W Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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