STMICROELECTRONICS STTH60L04W

STTH60L04W
Ultrafast high voltage rectifier
Mian product characteristics
IF(AV)
60 A
VRRM
400 V
Tj (max)
175° C
VF (typ)
0.83 V
trr (max)
50 ns
A
K
Features and benefits
DO-247
STTH60L04W
●
Ultrafast switching
●
Low reverse current
●
Low thermal resistance
●
Reduces switching and conduction losses
Description
Order codes
The STTH60L04W uses ST 400 V technology
and is specially suited for use in switching power
supplies, welding equipment, and industrial
applications, as an output rectification diode.
Table 1.
Part number
Marking
STTH60L04W
STTH60L04
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
400
V
IF(RMS)
RMS forward current
90
A
60
A
600
A
-55 to + 175
°C
175
°C
IF(AV)
Average forward current
Tc = 90° C δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
October 2006
Rev 1
Per diode
1/7
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7
Characteristics
1
STTH60L04W
Characteristics
Table 2.
Thermal resistance
Symbol
Rth(j-c)
Table 3.
Symbol
Parameter
Value (max).
Unit
0.70
°C/W
Junction to
case
Static electrical characteristics (per diode)
Parameter
IR(1)
Reverse leakage
current
VF(2)
Forward voltage drop
Test conditions
Tj = 25° C
Tj = 150° C
Tj = 25° C
Tj = 150° C
Min.
Typ
Max.
Unit
50
VR = VRRM
µA
100
1000
1.2
IF = 60 A
V
0.83
1.0
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.8 x IF(AV) + 0.0033 IF2(RMS)
Table 4.
Symbol
trr
Parameter
Reverse recovery
time
Test conditions
Tj = 25° C
66
IF = 1 A dIF/dt = 200 A/µs
VR = 30 V
36
Tj = 125° C
VR = 200 V
IF = 60 A
dIF/dt = 100 A/µs
Softness factor
Tj = 125° C
VR = 200 V
IF = 60 A
dIF/dt = 100 A/µs
tfr
Forward recovery
time
Tj = 25° C
dIF/dt = 200 A/µs
IF = 60 A
VFR = 1.1 x VFmax
VFP
Forward recovery
voltage
Tj = 25° C
IF = 60 A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
Sfactor
Min Typ Max Unit
IF = 1 A dIF/dt = 50 A/µs
VR = 30 V
Reverse recovery
current
IRM
2/7
Dynamic characteristics (per diode)
90
ns
50
15
A
600
ns
0.4
3.2
V
STTH60L04W
Figure 1.
Characteristics
Conduction losses versus
Figure 2.
average forward current (per diode)
P (W)
I
200
80
d=0.5
FM
Forward voltage drop versus
forward current (per diode)
(A)
d=1
180
70
d=0.2
TJ=150°C
(Maximum values)
160
60
140
d=0.1
50
120
d=0.05
TJ=150°C
(Typical values)
100
40
80
30
60
20
T
10
40
0
10
Figure 3.
1.0
20
30
40
V FM (V)
20
I F(AV) (A)
0
50
60
70
0.0
80
0.2
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
I
Z th(j-c) /R th(j-c)
45
RM
Single pulse
0.9
TJ=25°C
(Maximum values)
0
35
0.7
0.6
0.8
1.0
1.2
1.4
1.6
Peak reverse recovery current
versus dIF/dt (typical values, per
diode)
(A)
IF=IF(AV)
VR=200V
Tj=125°C
40
0.8
0.4
30
0.6
25
0.5
20
0.4
15
0.3
10
0.2
0.1
5
t P (s)
0.0
1.E-04
1.E-03
Figure 5.
dI F /dt(A/µs)
0
1.E-02
1.E-01
1.E+00
Reverse recovery time versus
dIF/dt (typical values, per diode)
0
50
Figure 6.
t rr (ns)
100
150
200
250
300
350
400
450
500
Reverse recovery charges versus
dIF/dt (typical values, per diode)
Q rr (nC)
3000
300
IF=IF(AV)
VR=200V
Tj=125°C
250
IF=IF(AV)
VR=200V
Tj=125°C
2500
200
2000
150
1500
100
1000
500
50
dI F /dt(A/µs)
0
0
50
100
150
200
250
300
dI F /dt(A/µs)
0
350
400
450
500
0
100
200
300
400
500
3/7
Characteristics
Figure 7.
STTH60L04W
Reverse recovery softness factor
versus dIF/dt (typical values, per
diode)
S FACTOR
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
1.6
0.8
IF < 2 x IF(AV)
VR=200V
Tj=125°C
0.7
SFACTOR
1.4
1.2
0.6
1.0
0.5
0.8
IRM & tRR
0.4
0.6
0.3
0.4
0.2
QRR
0.2
0.1
dI F /dt(A/µs)
0.0
0.0
25
0
50
Figure 9.
100
150
200
250
300
350
400
450
50
75
100
125
500
Transient peak forward voltage
versus dIF/dt (typical values, per
diode)
Figure 10. Forward recovery time versus dIF/dt
(typical values, per diode)
t
VFP(V)
1000
8
IF=IF(AV)
Tj=125°C
7
IF=IF(AV)
VR=200V
Reference: Tj=125°C
T (°C)
j
fr
(ns)
IF=IF(AV)
VFR=1.1 x V F max.
Tj=125°C
900
800
6
700
5
600
4
500
400
3
300
2
200
1
100
dI /dt(A/µs)
F
0
0
50
100
150
200
250
300
350
400
450
500
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C (pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
V (V)
R
100
1
4/7
10
dI F /dt(A/µs)
0
100
1000
0
50
100
150
200
250
300
350
400
450
500
STTH60L04W
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.8 Nm
●
Maximum torque value: 1.0 Nm
Table 5.
DO-247 Dimensions
Dimensions
Ref.
Millimeters
Min.
V
Typ.
Max.
Inches
Min.
Typ.
Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
Dia
V
F2
2.00
0.078
A
H
F3
2.00
G
2.40 0.078
10.90
0.094
0.429
L5
L
L2
L4
F2
L3
L1
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
F3
D
V2
L3
F
G
H
M
E
18.50
14.20
0.728
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5°
5°
V2
60°
60°
Dia.
3.55
3.65 0.139
0.143
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
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Ordering information
3
4
6/7
STTH60L04W
Ordering information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STTH60L04W
STTH60L04W
DO-247
4.4 g
30
Tube
Revision history
Date
Revision
26-Oct-2006
1
Description of Changes
First issue
STTH60L04W
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