STX616 High voltage NPN power transistor Features ■ High voltage capability ■ High DC current gain ■ Minimum lot-to-lot spread for reliable operation Applications ■ Switching mode power supply ■ Battery charger TO-92 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. The device is designed for use in SMPS and battery charger. Table 1. Figure 1. TO-92AP Internal schematic diagram Device summary Order code Marking Package Packaging STX616 X616 TO-92 Bulk STX616-AP X616 TO-92AP Ammopack October 2007 Rev 2 1/8 www.st.com 8 Electrical characteristics 1 STX616 STX616-AP Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 2. Absolute maximum rating Symbol Value Unit VCES Collector-emitter voltage (V BE = 0) 980 V VCEO Collector-emitter voltage (IB = 0) 500 V VEBO Emitter-base voltage (IC = 0) 12 V Collector current 1.5 A Collector peak current (tP < 5ms) 2.4 A Base current 0.8 A IBM Base peak current (tP < 5ms) 1.2 A Ptot Total dissipation at Tc = 25°C 2.8 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 44.6 150 °C/W °C/W IC ICM IB TJ Table 3. Symbol Rthj-case Rthj-amb 2/8 Parameter Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient __max __max STX616 STX616-AP 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol ICES VCE(sus) (1) VEBO VCE(sat) (1) VBE(sat) (1) hFE (1) ton ts tf ton ts tf ts tf ts tf Electrical characteristics Parameter Collector cut-off current (VBE =0) Test conditions Min. VCE = 980V VCE = 980V Tc = 125°C Typ. Max. Unit 50 0.5 µA mA Collector-emitter sustaining voltage (IB = 0) IC = 10mA 500 V Emitter-base voltage (IC = 0) IE = 1mA 12 V Collector-emitter saturation voltage IC = 0.2A IB = 40mA 0.5 V IC = 1A IB = 200mA 1 V Base-emitter saturation voltage IC = 0.2A IB = 40mA IC = 1A IB = 200mA 1 1.4 V V IC = 500µA VCE = 2V 17 DC current gain RESISTIVE LOAD Turn-on time Storage time Fall time RESISTIVE LOAD Turn-on time Storage time Fall time IC = 200mA V CE = 5V 25 IC = 500mA V CE = 5V 12 IC = 1.5A VCE = 5V 4 VCC = 250V IC = 250mA 0.2 µs IB1 = 65mA IB2 = -130mA 5 µs 0.65 µs VCC = 250V IC = 0.8A IB1 = 160mA IB2 = -0.4A INDUCTIVE LOAD Storage time Fall time Vcl = 300V IC = 250mA IB1 = 65mA IB2 = -130mA INDUCTIVE LOAD Storage time Fall time Vcl = 300V IC = 0.8A IB1 = 160mA IB2 = -0.4A L = 200µH L = 200µH 1 µs 2.5 µs 0.35 µs 5 µs 0.5 µs 2.5 µs 0.25 µs Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 3/8 Package mechanical data 3 STX616 STX616-AP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 4/8 STX616 STX616-AP Package mechanical data TO-92 BULK SHIPMENT MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 4.32 4.95 b 0.36 0.51 D 4.45 4.95 E 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 L 12.70 15.49 R 2.16 2.41 S1 0.92 1.52 W 0.41 0.56 V 5O 0102782 C 5/8 Package mechanical data STX616 STX616-AP TO-92 AMMOPACK SHIPMENT (Suffix”-AP”) MECHANICAL DATA DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P 6/8 MIN. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 mm. TYP 12.70 6.35 2.54 18.00 6.00 9.00 18.50 15.50 16.00 3.80 4.00 3.00 -1.00 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 STX616 STX616-AP 4 Revision history Revision history Table 5. Document revision history Date Revision Changes 06-Jun-2007 1 Initial release. 22-Oct-2007 2 Added TO-92AP package. 7/8 STX616 STX616-AP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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