FAIRCHILD FDD8N50NZTM

FDD8N50NZ
N-Channel UniFETTM II MOSFET
500 V, 6.5 A, 850 m
Features
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high
voltage MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher
avalanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
• RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 14 nC)
• Low Crss (Typ. pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
D
G
G
S
D-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
- Pulsed
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
Peak Diode Recovery dv/dt
A
(Note 1)
26
A
(Note 2)
287
mJ
Avalanche Current
(Note 1)
6.5
A
Repetitive Avalanche Energy
(Note 1)
9
mJ
10
V/ns
(Note 3)
(TC = 25oC)
90
W
- Derate above 25oC
0.7
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
V
3.9
- Continuous (TC = 100oC)
Drain Current
±25
6.5
Drain Current
IDM
Unit
V
- Continuous (TC = 25oC)
ID
EAS
FDD8N50NZ
500
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
FDD8N50NZ
RJC
Thermal Resistance, Junction to Case, Max.
1.4
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C0
1
Unit
o
C/W
www.fairchildsemi.com
FDD8N50NZ N-Channel UniFETTM II MOSFET
March 2013
Device Marking
FDD8N50NZ
Device
FDD8N50NZTM
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
-
0.5
-
V/oC
A
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TC = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
1
VDS = 400V, TC = 125oC
-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±25V, VDS = 0V
-
-
±10
ID = 250A, Referenced to
25oC
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 3.25A
-
0.77
0.85

gFS
Forward Transconductance
VDS = 20V, ID = 3.25A
-
6.3
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
565
735
pF
-
80
105
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V,ID = 6.5A
VGS = 10V
(Note 4)
-
5
8
pF
-
14
18
nC
-
4
-
nC
-
6
-
nC
-
17
45
ns
-
34
80
ns
-
43
95
ns
-
27
60
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 6.5A
RG = 25, VGS = 10V
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
8
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
30
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.5A
-
-
1.4
V
trr
Reverse Recovery Time
228
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 6.5A
dIF/dt = 100A/s
-
1.43
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 13.6mH, IAS = 6.5A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 6.5A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C0
2
www.fairchildsemi.com
FDD8N50NZ N-Channel UniFETTM II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
30
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID, Drain Current[A]
ID, Drain Current[A]
10
Figure 2. Transfer Characteristics
30
1
0.1
o
150 C
o
-55 C
o
25 C
1
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
0.03
0.03
0.1
1
VDS, Drain-Source Voltage[V]
10
0.1
20
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
100
IS, Reverse Drain Current [A]
1.6
1.2
VGS = 10V
VGS = 20V
0.8
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
0.4
0
3
6
9
12
ID, Drain Current [A]
15
1
0.4
18
Figure 5. Capacitance Characteristics
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
900
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
600
300
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C0
2. 250s Pulse Test
0.8
1.2
1.6
2.0
VSD, Body Diode Forward Voltage [V]
2.4
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
1200
Capacitances [pF]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.0
RDS(ON) [],
Drain-Source On-Resistance
4
6
8
VGS, Gate-Source Voltage[V]
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
*Note: ID = 6.5A
0
30
0
3
3
6
9
12
Qg, Total Gate Charge [nC]
15
www.fairchildsemi.com
FDD8N50NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250A
0.8
-100
-50
0
50
100
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 3.25A
0.5
0.0
-100
150
Figure 9. Maximum Safe Operating Area
-50
0
50
100
o
TJ, Junction Temperature [ C]
150
Figure 10. Maximum Drain Current
vs. Case Temperature
7.0
50
100s
10
5.6
ID, Drain Current [A]
ID, Drain Current [A]
30s
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
0.1
DC
*Notes:
4.2
2.8
1.4
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0.0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZJC]
2
1
0.5
0.2
PDM
0.1
0.1
t1
0.05
t2
*Notes:
0.02
o
0.01
1. ZJC(t) = 1.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-5
10
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C0
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
4
-1
10
1
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FDD8N50NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics (Continued)
FDD8N50NZ N-Channel UniFETTM II MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C0
5
www.fairchildsemi.com
FDD8N50NZ N-Channel UniFETTM II MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C0
6
www.fairchildsemi.com
FDD8N50NZ N-Channel UniFETTM II MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FDD8N50NZ Rev. C0
8
www.fairchildsemi.com
FDD8N50NZ N-Channel UniFETTM II MOSFET
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