BUF650 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA 14283 High reverse voltage Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Test Conditions Tcase ≤ 25°C Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 10 15 5 7.5 70 150 –65 to +150 Unit V V V V A A A A W °C °C Symbol RthJC Value 1.78 Unit K/W Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97 Test Conditions 1 (8) BUF650 Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage g DC forward current transfer ratio Collector-emitter working voltage Dynamic y saturation voltage g Gain bandwidth product 2 (8) Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150°C IC = 300 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA IC = 1.6 A; IB = 0.4 A IC = 5 A; IB = 1.6 A IC = 1.6 A; IB = 0.4 A IC = 5 A; IB = 1.6 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 1.6 A VCE = 2 V; IC = 5 A VCE = 5 V; IC = 10 A VS = 50 V; L = 1 mH; IC = 10 A; IB1 = 3.3 A; –IB2 = 1 A; –VBB = 5 V IC = 5 A; IB = 1 A, t = 1 ms IC = 5 A; IB = 1 A, t = 3 ms IC = 500 mA; VCE = 10 V; f = 1 MHz Symbol ICES ICES V(BR)CEO Min V(BR)EBO VCEsat VCEsat VBEsat VBEsat hFE hFE hFE hFE VCEW 9 VCEsatdyn VCEsatdyn fT Typ Max 50 0.5 0.1 0.2 0.9 1 0.2 0.4 1 1.2 400 15 15 7 4 500 V V V V V V 5.5 1.5 4 Unit mA mA V 10 2.5 V V MHz TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97 BUF650 Switching Characteristics Tcase = 25°C, unless otherwise specified Parameter Test Conditions Resistive load (figure 2) Turn on time IC = 1.6 A;; IB1 = 0.4 A;; –IB2 = 0.8 A;; VS = 250 V Storage time Symbol Fall time Turn on time IC = 5 A;; IB1 = 1 A;; –IB2 = 2.5 A;; VS = 250 V Storage time Fall time Inductive load (figure 3) Storage time IC = 1.6 A;; IB1 = 0.4 A;; –IB2 = 0.8 A;; Vclamp = 300 V; L = 200 mH Fall time Storage time IC = 5 A;; IB1 = 1 A;; –IB2 = 2.5 A;; Vclamp = 300 V; L = 200 mH Fall time Min Typ Max Unit ton ts tf ton ts tf 0.15 2.2 0.3 0.4 1.2 0.1 0.25 3 0.4 0.6 1.5 0.15 ms ms ms ms ms ms ts tf ts tf 2.2 0.15 1.1 0.05 3 0.25 1.5 0.15 ms ms ms ms 94 8863 V S2 IC + 10 V IB w Imeasure IC 5 IC LC + V S1 + 0 to 30 V VCE V(BR)CEO 3 Pulses tp T tp + 0.1 + 10 ms I(BR)R 100 mW V(BR)CEO Figure 1. Test circuit for V(BR)CE0 TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97 3 (8) BUF650 94 8852 IB IB1 0 t –IB2 RC IC (1) VCE IB1 VCC IB IC 0.9 IC RB VBB + 0.1 IC t tr td ton (1) Fast electronic switch ts toff tf Figure 2. Test circuit for switching characteristics – resistive load 94 8853 IB IB1 0 LC t –IB2 IC (2) (1) IB1 IB IC VCE Vclamp VCC 0.9 IC RB VBB + 0.1 IC t ts (1) Fast electronic switch (2) Fast recovery rectifier tr Figure 3. Test circuit for switching characteristics – inductive load 4 (8) TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97 BUF650 Typical Characteristics (Tcase = 25_C unless otherwise specified) 100 P tot – Total Power Dissipation ( W ) 12 IC – Collector Current ( A ) 10 8 6 0.1 x IC < IB2 < 0.5 x IC 4 VCESat < 2V 2 1.78 K/W 10 12.5 K/W 1 25 K/W 0.1 50 K/W RthJA = 85 K/W 0.01 0.001 0 0 100 200 300 500 400 600 VCE – Collector Emitter Voltage ( V ) 95 10562 0 25 580mA 400mA 6 190mA 95mA 2 IB = 49mA 0 4 8 12 16 20 VCE – Collector Emitter Voltage ( V ) 95 10566 VCEsat – Collector Emitter Saturation Voltage ( V ) IC – Collector Current ( A ) 1000mA 780mA 0 IC = 1A h FE – Forward DC Current Transfer Ratio h FE – Forward DC Current Transfer Ratio 95 10564 10 5V VCE = 2V 10 IC – Collector Current ( A ) Figure 6. hFE vs. IC TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97 4A 8A 6A 0.1 0.01 0.01 0.1 10 1 IB – Base Current ( A ) Figure 8. VCEsat vs. IB 10V 1 2A 1 95 10567 100 0.1 150 10 Figure 5. IC vs. VCE 1 0.01 125 100 Figure 7. Ptot vs.Tcase 10 4 75 Tcase ( °C ) Figure 4. VCEW – Diagram 8 50 95 10563 100 125°C 25°C 10 1 0.01 100 95 10565 Tj = 75°C 0.1 1 10 100 IC – Collector Current ( A ) Figure 9. hFE vs. IC 5 (8) BUF650 0.5 saturated switching R-load IC = 1.6A, IB1 = 0.2A 8 0.4 t f – Fall Time ( ms ) t s – Storage Time (m s ) 10 6 4 Tcase = 125°C Tcase = 125°C 0.3 0.2 25°C 2 saturated switching R-load IC = 1.6A, IB1 = 0.2A 0.1 25°C 0 0 0 2 4 6 8 10 –IB2/IB1 95 10570 0 4 6 1.0 saturated switching R-load IC = 1.6A, IB1 = 0.4A saturated switching R-load IC = 1.6A, IB1 = 0.4A 0.8 t f – Fall Time ( ms ) 8 6 Tcase = 125°C 4 0.6 Tcase = 125°C 0.4 0.2 2 25°C 25°C 0 0 0 0.8 1.6 2.4 –IB2/IB1 Figure 11. ts vs. –IB2/IB1 6 (8) 10 Figure 12. tf vs. –IB2/IB1 10 95 10569 8 –IB2/IB1 95 10571 Figure 10. ts vs. –IB2/IB1 t s – Storage Time (m s ) 2 3.2 4.0 0 95 10568 0.8 1.6 2.4 3.2 4.0 –IB2/IB1 Figure 13. tf vs. –IB2/IB1 TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97 BUF650 Dimensions in mm 14277 TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97 7 (8) BUF650 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 8 (8) TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97