TEMIC BUF650

BUF650
Silicon NPN High Voltage Switching Transistor
Features
D
D
D
D
D
D
D
D
D
Simple-sWitch-Off Transistor (SWOT)
HIGH SPEED technology
Planar passivation
100 kHz switching rate
Very low switching losses
Very low dynamic saturation
Very low operating temperature
Optimized RBSOA
14283
High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
g
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tcase ≤ 25°C
Symbol
VCEO
VCEW
VCES
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
400
500
700
9
10
15
5
7.5
70
150
–65 to +150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Symbol
RthJC
Value
1.78
Unit
K/W
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97
Test Conditions
1 (8)
BUF650
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Collector cut-off current
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation
voltage
Base-emitter saturation voltage
g
DC forward current transfer ratio
Collector-emitter working voltage
Dynamic
y
saturation voltage
g
Gain bandwidth product
2 (8)
Test Conditions
VCE = 700 V
VCE = 700 V; Tcase = 150°C
IC = 300 mA; L = 125 mH;
Imeasure = 100 mA
IE = 1 mA
IC = 1.6 A; IB = 0.4 A
IC = 5 A; IB = 1.6 A
IC = 1.6 A; IB = 0.4 A
IC = 5 A; IB = 1.6 A
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 1.6 A
VCE = 2 V; IC = 5 A
VCE = 5 V; IC = 10 A
VS = 50 V; L = 1 mH; IC = 10 A;
IB1 = 3.3 A; –IB2 = 1 A;
–VBB = 5 V
IC = 5 A; IB = 1 A, t = 1 ms
IC = 5 A; IB = 1 A, t = 3 ms
IC = 500 mA; VCE = 10 V;
f = 1 MHz
Symbol
ICES
ICES
V(BR)CEO
Min
V(BR)EBO
VCEsat
VCEsat
VBEsat
VBEsat
hFE
hFE
hFE
hFE
VCEW
9
VCEsatdyn
VCEsatdyn
fT
Typ
Max
50
0.5
0.1
0.2
0.9
1
0.2
0.4
1
1.2
400
15
15
7
4
500
V
V
V
V
V
V
5.5
1.5
4
Unit
mA
mA
V
10
2.5
V
V
MHz
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97
BUF650
Switching Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Resistive load (figure 2)
Turn on time
IC = 1.6 A;; IB1 = 0.4 A;; –IB2 = 0.8 A;;
VS = 250 V
Storage time
Symbol
Fall time
Turn on time
IC = 5 A;; IB1 = 1 A;; –IB2 = 2.5 A;;
VS = 250 V
Storage time
Fall time
Inductive load (figure 3)
Storage time
IC = 1.6 A;; IB1 = 0.4 A;; –IB2 = 0.8 A;;
Vclamp = 300 V; L = 200 mH
Fall time
Storage time
IC = 5 A;; IB1 = 1 A;; –IB2 = 2.5 A;;
Vclamp = 300 V; L = 200 mH
Fall time
Min
Typ
Max
Unit
ton
ts
tf
ton
ts
tf
0.15
2.2
0.3
0.4
1.2
0.1
0.25
3
0.4
0.6
1.5
0.15
ms
ms
ms
ms
ms
ms
ts
tf
ts
tf
2.2
0.15
1.1
0.05
3
0.25
1.5
0.15
ms
ms
ms
ms
94 8863
V S2
IC
+ 10 V
IB
w
Imeasure
IC
5
IC
LC
+
V S1
+
0 to 30 V
VCE
V(BR)CEO
3 Pulses
tp
T
tp
+ 0.1
+ 10 ms
I(BR)R
100 mW
V(BR)CEO
Figure 1. Test circuit for V(BR)CE0
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97
3 (8)
BUF650
94 8852
IB
IB1
0
t
–IB2
RC
IC
(1)
VCE
IB1
VCC
IB
IC
0.9 IC
RB
VBB
+
0.1 IC
t
tr
td
ton
(1) Fast electronic switch
ts
toff
tf
Figure 2. Test circuit for switching characteristics – resistive load
94 8853
IB
IB1
0
LC
t
–IB2
IC
(2)
(1)
IB1
IB
IC
VCE
Vclamp
VCC 0.9 IC
RB
VBB
+
0.1 IC
t
ts
(1) Fast electronic switch
(2) Fast recovery rectifier
tr
Figure 3. Test circuit for switching characteristics – inductive load
4 (8)
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97
BUF650
Typical Characteristics (Tcase = 25_C unless otherwise specified)
100
P tot – Total Power Dissipation ( W )
12
IC – Collector Current ( A )
10
8
6
0.1 x IC < IB2 < 0.5 x IC
4
VCESat < 2V
2
1.78 K/W
10
12.5 K/W
1
25 K/W
0.1
50 K/W
RthJA = 85 K/W
0.01
0.001
0
0
100
200
300
500
400
600
VCE – Collector Emitter Voltage ( V )
95 10562
0
25
580mA
400mA
6
190mA
95mA
2
IB = 49mA
0
4
8
12
16
20
VCE – Collector Emitter Voltage ( V )
95 10566
VCEsat – Collector Emitter Saturation Voltage ( V )
IC – Collector Current ( A )
1000mA
780mA
0
IC = 1A
h FE – Forward DC Current Transfer Ratio
h FE – Forward DC Current Transfer Ratio
95 10564
10
5V
VCE = 2V
10
IC – Collector Current ( A )
Figure 6. hFE vs. IC
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97
4A
8A
6A
0.1
0.01
0.01
0.1
10
1
IB – Base Current ( A )
Figure 8. VCEsat vs. IB
10V
1
2A
1
95 10567
100
0.1
150
10
Figure 5. IC vs. VCE
1
0.01
125
100
Figure 7. Ptot vs.Tcase
10
4
75
Tcase ( °C )
Figure 4. VCEW – Diagram
8
50
95 10563
100
125°C
25°C
10
1
0.01
100
95 10565
Tj = 75°C
0.1
1
10
100
IC – Collector Current ( A )
Figure 9. hFE vs. IC
5 (8)
BUF650
0.5
saturated switching
R-load
IC = 1.6A, IB1 = 0.2A
8
0.4
t f – Fall Time ( ms )
t s – Storage Time (m s )
10
6
4
Tcase = 125°C
Tcase = 125°C
0.3
0.2
25°C
2
saturated switching
R-load
IC = 1.6A, IB1 = 0.2A
0.1
25°C
0
0
0
2
4
6
8
10
–IB2/IB1
95 10570
0
4
6
1.0
saturated switching
R-load
IC = 1.6A, IB1 = 0.4A
saturated switching
R-load
IC = 1.6A, IB1 = 0.4A
0.8
t f – Fall Time ( ms )
8
6
Tcase = 125°C
4
0.6
Tcase = 125°C
0.4
0.2
2
25°C
25°C
0
0
0
0.8
1.6
2.4
–IB2/IB1
Figure 11. ts vs. –IB2/IB1
6 (8)
10
Figure 12. tf vs. –IB2/IB1
10
95 10569
8
–IB2/IB1
95 10571
Figure 10. ts vs. –IB2/IB1
t s – Storage Time (m s )
2
3.2
4.0
0
95 10568
0.8
1.6
2.4
3.2
4.0
–IB2/IB1
Figure 13. tf vs. –IB2/IB1
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97
BUF650
Dimensions in mm
14277
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97
7 (8)
BUF650
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
8 (8)
TELEFUNKEN Semiconductors
Rev. C2, 18-Jul-97