BUF644 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA 14283 High reverse voltage Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Test Conditions Tcase ≤ 25°C Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 8 12 4 6 70 150 –65 to +150 Unit V V V V A A A A W °C °C Symbol RthJC Value 1.78 Unit K/W Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Document Number 86512 Rev. 2, 20–Jan–99 Test Conditions www.vishay.de • FaxBack +1-408-970-5600 1 (9) BUF644 Vishay Telefunken Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC forward current transfer ratio Collector-emitter working voltage Dynamic y saturation voltage g Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150°C IC = 500 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA Symbol ICES ICES V(BR)CEO 400 Unit mA mA V V(BR)EBO 9 V IC = 1.3 A; IB = 0.3 A VCEsat IC = 4 A; IB = 1.3 A VCEsat IC = 1.3 A; IB = 0.3 A VBEsat IC = 4 A; IB = 1.3 A VBEsat VCE = 2 V; IC = 10 mA hFE VCE = 2 V; IC = 1.3 A hFE VCE = 2 V; IC = 4 A hFE VCE = 5 V; IC = 8 A hFE VS = 50 V; L = 1 mH; IC = 8 A; VCEW IB1 = 2.7 A; –IB2 = 0.8 A; –VBB = 5 V IC = 4 A; IB = 0.8 A; t = 1 ms VCEsatdyn IC = 4 A; IB = 0.8 A; t = 3 ms VCEsatdyn www.vishay.de • FaxBack +1-408-970-5600 2 (9) Min 15 12 6 4 500 Typ 0.1 0.2 0.9 1 18 18 Max 50 0.5 0.2 0.4 1 1.2 V V V V V 7.5 1.5 15 4 V V Document Number 86512 Rev. 2, 20–Jan–99 BUF644 Vishay Telefunken Switching Characteristics Tcase = 25°C, unless otherwise specified Parameter Test Conditions Resistive load (figure 2) Turn on time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A; VS = 125 V Storage time Symbol Fall time Inductive load (figure 3) Storage time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A; VS = 125 V; Vclamp = 300 V; –VBE = 5 V; Fall time L = 200 mH; H Tcase = 25°C Cross over time Storage time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A; VS = 125 V; Vclamp = 300 V; –VBE = 5 V; Fall time L = 200 mH; H Tcase = 100°C Cross over time Min Typ Max Unit ton ts tf 0.85 1 0.15 1.2 1.7 0.3 ms ms ms ts tf tc ts tf tc 1.5 0.1 0.15 2 0.14 0.25 2.5 0.2 0.5 ms ms ms ms ms ms 94 8863 V S2 IC + 10 V IB w Imeasure IC 5 IC LC + V S1 + 0 to 30 V VCE V(BR)CEO 3 Pulses tp T tp + 0.1 + 10 ms I(BR)R 100 mW V(BR)CEO Figure 1. Test circuit for V(BR)CE0 Document Number 86512 Rev. 2, 20–Jan–99 www.vishay.de • FaxBack +1-408-970-5600 3 (9) BUF644 Vishay Telefunken 94 8852 IB IB1 0 t –IB2 RC IC (1) VCE IB1 VCC IB IC 0.9 IC RB VBB + 0.1 IC tr td ton (1) Fast electronic switch t ts toff tf Figure 2. Test circuit for switching characteristics – resistive load 94 8853 IB IB1 0 LC t –IB2 IC (2) (1) IB1 IB IC VCE Vclamp VCC 0.9 IC RB VBB + 0.1 IC t (1) Fast electronic switch (2) Fast recovery rectifier ts tr Figure 3. Test circuit for switching characteristics – inductive load www.vishay.de • FaxBack +1-408-970-5600 4 (9) Document Number 86512 Rev. 2, 20–Jan–99 BUF644 Vishay Telefunken Typical Characteristics (Tcase = 25_C unless otherwise specified) P tot – Total Power Dissipation ( W ) 100 IC – Collector Current ( A ) 8 6 4 0.1 x IC < IB2 < 0.5 x IC 2 VCESat < 2V 0 1.76 K/W 10 12.5 K/W 1 25 K/W 0.1 50 K/W RthJA = 85 K/W 0.01 0.001 0 100 200 300 400 500 600 VCE – Collector Emitter Voltage ( V ) 95 10558 0 - Collector Emitter Saturation Voltage (V) 800mA 600mA 400mA 4 C 200mA 2 IB = 50mA 0 0 2 4 6 8 10 VCE - Collector Emitter Voltage (V) 94 9207 CEsat I - Collector Current (V) 1A V 1.4A 6 150 2A 3A 4A 0.1 IC = 0.75A 0.01 0.01 0.1 1.25A 1 10 IB - Base Current (A) Figure 8. VCEsat vs. IB - Forward DC Current Transfer Ratio 100 VCE = 10V 10 VCE = 5V VCE = 2V FE FE - Forward DC Current Transfer Ratio 125 5A 1 94 9208 100 1 0.01 h h 100 10 Figure 5. IC vs. VCE 94 9209 75 Figure 7. Ptot vs.Tcase 10 8 50 Tcase ( °C ) Figure 4. VCEW – Diagram Tj = 25°C 25 95 10545 0.1 1 IC - Collector Current (A) Figure 6. hFE vs. IC Document Number 86512 Rev. 2, 20–Jan–99 10 94 9210 Tj = 125°C Tj = 25°C Tj = –25°C 10 VCE = 2V 1 0.01 0.1 1 10 IC - Collector Current (A) Figure 9. hFE vs. IC www.vishay.de • FaxBack +1-408-970-5600 5 (9) BUF644 Vishay Telefunken 1.0 10 saturated switching R-load IC = 1.5A, IB1 = 0.3A saturated switching R-load IC = 1.5A, IB1 = 0.3A 0.8 t f - Fall Time ( m s) ts - Storage Time ( m s) 8 6 Tj = 125°C 4 0.6 Tj = 125°C 0.4 0.2 2 Tj = 25°C Tj = 25°C 0 0 0 1 2 3 4 –IB2 / IB1 94 9215 0 2 3 4 –IB2 / IB1 94 9216 Figure 10. ts vs. –IB2/IB1 Figure 13. tf vs. –IB2/IB1 1.0 10 saturated switching R-load IC = 3A, IB1 = 0.6A 0.8 t f - Fall Time ( m s) 8 ts - Storage Time ( m s) 1 6 Tj = 125°C 4 Tj = 125°C 0.6 0.4 0.2 2 saturated switching R-load IC = 3A, IB1 = 0.6A Tj = 25°C Tj = 25°C 0 0 0 1 2 3 4 –IB2 / IB1 94 9211 0 4 1.0 unsaturated (Baker clamp) R-load IC = 3A, IB1 = 0.6A unsaturated (Baker clamp) R-load IC = 3A, IB1 = 0.6A 0.8 t f - Fall Time ( m s) 8 ts - Storage Time ( m s) 3 Figure 14. tf vs. –IB2/IB1 10 6 4 Tj = 125°C 0.6 0.4 Tj = 125°C 0.2 2 Tj = 25°C Tj = 25°C 0 94 9213 2 –IB2 / IB1 94 9214 Figure 11. ts vs. –IB2/IB1 0 1 0 1 2 3 –IB2 / IB1 Figure 12. ts vs. –IB2/IB1 www.vishay.de • FaxBack +1-408-970-5600 6 (9) 4 0 94 9212 1 2 3 4 –IB2 / IB1 Figure 15. tf vs. –IB2/IB1 Document Number 86512 Rev. 2, 20–Jan–99 BUF644 Vishay Telefunken 0.5 saturated switching L–load IC = 1.5A, IB1 = 0.3A t f - Fall Time ( m s) 0.4 0.3 Tj = 125°C 0.2 Tj = 25°C 0.1 0 0 1 2 3 4 –IB2 / IB1 94 9218 Figure 16. tf vs. –IB2/IB1 Document Number 86512 Rev. 2, 20–Jan–99 www.vishay.de • FaxBack +1-408-970-5600 7 (9) BUF644 Vishay Telefunken Dimensions in mm 0.52 0.40 4.8 4.4 2.70 2.35 1.40 1.27 1.3 1.0 0.85 0.65 1.5 0.9 E 10.4 9.8 3.8 3.5 C 2.64 2.44 B 1.5 1.2 2.9 2.7 4.8 4.3 6.7 5.8 technical drawings according to DIN specifications 13.6 12.2 16.0 15.2 Collector connected with metallic surface www.vishay.de • FaxBack +1-408-970-5600 8 (9) 94 9184 Standard Plastic Case 14A 3 DIN 41 869 JEDEC TO 220 Document Number 86512 Rev. 2, 20–Jan–99 BUF644 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 86512 Rev. 2, 20–Jan–99 www.vishay.de • FaxBack +1-408-970-5600 9 (9)