2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4540 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V Collector current IC −1 A PW-MINI Base current IB −0.2 A JEDEC PC 500 Collector power dissipation PC (Note 1) Junction temperature Storage temperature range 1000 mW Tj 150 °C Tstg −55 to 150 °C ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 2SA1735 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −60 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −6 V, IC = 0 ― ― −0.1 μA V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V Collector-emitter breakdown voltage hFE (1) VCE = −2 V, IC = −100 mA 120 ― 400 hFE (2) VCE = −2 V, IC = −700 mA 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −25 mA ― ― −0.5 V Base-emitter saturation voltage VBE (sat) IC = −500 mA, IB = −25 mA ― ― −1.2 V fT VCE = −2 V, IC = −100 mA ― 100 ― MHz Cob VCB = −10 V, IE = 0, f = 1 MHz ― 16 ― pF ton IB2 ― 0.1 ― ― 0.25 ― ― 0.1 ― Transition frequency Collector output capacitance Turn-on time Switching time Storage time tstg tf OUTPUT INPUT I B1 IB1 20 μs Fall time IB2 50 Ω DC current gain μs VCC = −25 V IB1 = 25 mA,IB2 = 25 mA DUTY CYCLE ≤ 1% Marking Part No. (or abbreviation code) L C Note 3 Lot No. Note 3: A line beside a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SA1735 hFE – IC IC – VCE −1.2 −10 −8 1000 −6 Common emitter Ta = 100°C −1.0 300 −4 DC current gain hFE Collector current IC (A) Ta = 25°C −3 −0.8 −2 −0.4 IB = −1 mA −0.2 100 25 −25 30 10 3 Common emitter VCE = −2 V 0 0 0 −4 −8 −12 Collector-emitter voltage −16 1 −1 −20 −3 −10 −30 IC – VBE (mA) PC – Ta PC (W) VCE = −2 V (A) −1.0 −0.8 Ta = 100°C Collector power dissipation Collector current IC −1000 −3000 1.2 Common emitter 25 −25 −0.4 −0.2 0 0 −300 Collector current IC VCE (V) −1.2 −0.6 −100 −0.4 −0.8 −1.2 Base-emitter voltage −1.6 VBE (V) (250 mm2 × 0.8 t) (2) No heat sink 0.8 0.6 (2) 0.4 0.2 0 0 −2.0 (1) Mounted on a ceramic substrate (1) 1.0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 3 2009-12-21 2SA1735 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2009-12-21