MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 (600V/150A 7in1) High Power Switching Applications Motor Control Applications · Integrates inverter and brake power circuit into a single package · The electrodes are isolated from case. · Low thermal resistance · VCE (sat) = 1.6 V (typ.) Equivalent Circuit P 14 15 3 7 11 4 8 12 U V W B 16 17 18 19 20 N Signal Terminal 1. Open 2. Open 3. G (U) 4. E (U) 5. Open 6. Open 7. G (V) 8. E (V) 9. Open 10. Open 11. G (W) 12. E (W) 13. Open 14. TH1 15. TH2 16. G (B) 17. G (X) 18. G (Y) 19. G (Z) 20. E (L) 1 2001-10-03 MG150J7KS60 Package Dimensions: 2-108G1B 1. Open 2. Open 5. 9. Open 6. Open Open 10. Open 11. G (W) 12. E (W) 13. Open 14. TH1 15. TH2 16. G (B) 17. G (X) 18. G (Y) 19. G (Z) 20. E (L) 2 3. G (U) 7. G (V) 4. E (U) 8. E (V) 2001-10-03 MG150J7KS60 Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 150 1 ms ICP 300 DC IF 150 1 ms IFM 300 PC 750 W Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 75 1 ms ICP 150 Collector power dissipation (Tc = 25°C) PC 375 W Reverse voltage VR 600 V DC IF 75 1 ms IFM 150 Tj 150 °C Storage temperature range Tstg -40~125 °C Isolation voltage Visol 2500 (AC 1 min) V Terminal ¾ 2 (M4) Mounting ¾ 3 (M5) Collector current Inverter Forward current Collector power dissipation (Tc = 25°C) Collector current Brake Forward current Junction temperature Module Screw torque A A A A N･m Electrical Characteristics (Tj = 25°C) 1. Inverter stage Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ¾ ¾ ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ¾ ¾ 1.0 mA VCE = 5 V, IC = 150 mA V Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance VCE (sat) Cies Turn-on delay time Switching time VGE (off) Turn-off time Fall time VGE = 15 V, IC = 150 A 5.0 6.5 8.0 Tj = 25°C ¾ 1.6 2.2 Tj = 125°C ¾ ¾ 2.2 ¾ 25000 ¾ ¾ ¾ 1.00 ¾ ¾ 1.20 ¾ ¾ 0.50 ¾ ¾ 0.30 ¾ 2.0 2.2 VCE = 10 V, VGE = 0, f = 1 MHz td (on) toff tf Reverse recovery time trr Forward voltage VF VCC = 300 V, IC = 150 A VGE = ±15 V, RG = 15 W (Note 1) IF = 150 A V pF ms V Note 1: Switching time test circuit & timing chart 3 2001-10-03 MG150J7KS60 2. Brake stage Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ¾ ¾ ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ¾ ¾ 1.0 mA Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 75 mA 5.0 6.5 8.0 V Tj = 25°C ¾ 2.2 VCE (sat) VGE = 15 V, IC = 75 A 1.6 Collector-emitter saturation voltage Tj = 125°C ¾ ¾ 2.2 VCE = 10 V, VGE = 0, f = 1MHz ¾ 12000 ¾ ¾ ¾ 1.00 ¾ ¾ 1.20 ¾ ¾ 0.50 Input capacitance Cies Turn-on delay time Switching time Turn-off time Fall time td (on) toff VCC = 300 V, IC = 75 A VGE = ±15 V, RG = 24 W (Note 1) tf V pF ms Reverse current IR VR = 600 V ¾ ¾ 1.0 mA Forward voltage VF IF = 75 A ¾ 2.1 2.6 V Min Typ. Max Unit ITM = 0.2 mA ¾ 100 ¾ kW Tc = 25°C/Tc = 85°C ¾ 4390 ¾ K Inverter IGBT stage ¾ ¾ 0.167 Inverter FRD stage ¾ ¾ 0.313 Brake IGBT stage ¾ ¾ 0.333 Brake FRD stage ¾ ¾ 1.000 ¾ 0.05 ¾ Note 1: Switching time test circuit & timing chart 3. Module (Tc = 25°C) Characteristics Zero-power resistance B value Symbol R25 B25/85 Junction to case thermal resistance Case to fin thermal resistance Rth (j-c) Test Condition ¾ Rth (c-f) °C/W °C/W Switching Time Test Circuit & Timing Chart 90% VGE 10% RG -VGE VCC RG Irr 90% trr IC 10% 10% td (on) 4 td (off) tf 2001-10-03 MG150J7KS60 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-10-03